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Part No. |
MT8VDDT1664AG-202A1
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OCR Text |
sdram dimms micron technology, inc., reserves the right to change products or specifications without notice. zm41.p65 ? rev. 3/00 ?2000, mic...0.2v, v dd q = +2.5v 0.2v 2.5v i/o (sstl_2 compatible) commands entered on each positive ck edge... |
Description |
16M X 64 DDR DRAM MODULE, 0.8 ns, DMA184
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File Size |
403.49K /
23 Page |
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Part No. |
KMM366S824CT-GH
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OCR Text |
...cuit board in parallel for each sdram. the kmm366s824ct is a dual in-line memory module and is intended for mounting into 168-pin edge conn...0.3v power supply ? mrs cycle with address key programs latency (access from column address) ... |
Description |
8M X 64 SYNCHRONOUS DRAM MODULE, 6 ns, DMA168
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File Size |
163.28K /
11 Page |
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Mosel Vitelic
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Part No. |
V54C365164VL
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OCR Text |
...6 ball grid array (or bga) wbga sdram (x4/x8/x16) 56 pins assignment (top view) nc vss nc vssq vddq dq3 nc nc nc vssq vddq dq2 vss nc dqm nc...0.3 v, f = 1 mhz * note: capacitance is sampled and not 100% tested. symbol parameter max. unit c i1... |
Description |
HIGH PERFORMANCE 225/200/166/143 MHz 3.3 VOLT 4M X 16 SYNCHRONOUS DRAM 4 BANKS X 1Mbit X 16
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File Size |
706.89K /
56 Page |
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it Online |
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NANYA TECHNOLOGY CORP
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Part No. |
NT5DS128M4BT-6K
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OCR Text |
...s32m16bf nt5ds32m16bt 512mb ddr sdram rev 1.6 27 nov 2007 1 ? nanya technology corp . all rights reserved. nanya technology corp. reserves...0.2v (6k & 75b) ?v dd = v ddq = 2.6v 0.1v (5t) description nt5ds128m4bf, nt5ds128m4bt, nt5ds128... |
Description |
128M X 4 DDR DRAM, 0.7 ns, PDSO66
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File Size |
2,500.58K /
80 Page |
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Part No. |
MT48LC16M32L2F5-10
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OCR Text |
sdram addendum features pdf: 09005aef817f1b8c/source: 09005aef818112f1 micron technology, inc., reserves the right to change products or spe...0.3v notes: 1, 5, 6; please refer to the 256mb: x32 mobile sd ram data sheet for all notes. paramet... |
Description |
16M X 32 SYNCHRONOUS DRAM, PBGA90
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File Size |
248.66K /
10 Page |
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it Online |
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INTEGRATED SILICON SOLUTION INC
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Part No. |
IS42SM32400E-75EBLI
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OCR Text |
... write and read accesses to the sdram are burst oriented. the 128mb mobile synchronous dram is designed to minimize current consumption ma...0 5.4 5.4 ns cas latency = 2 6.5 6.5 6.5 5.4 ns key timing parameters
2 integrated silicon solut... |
Description |
4M X 32 SYNCHRONOUS DRAM, 5.4 ns, PBGA90
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File Size |
764.69K /
26 Page |
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it Online |
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Price and Availability
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