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  si-rectifier Datasheet PDF File

For si-rectifier Found Datasheets File :: 1144    Search Time::1.203ms    
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    IRHF67230 IRHF63230

International Rectifier
Part No. IRHF67230 IRHF63230
OCR Text ...i d irhf67230 100k rads (si) 0.145 ? 9.1a irhf63230 300k rads (si) 0.145 ? 9.1a for footnotes refer to the...rectifier?s r6 tm technology provides superior power mosfets for space applications. these devices ...
Description RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-39)

File Size 201.32K  /  9 Page

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    IRHE57Z30 IRHE58Z30

International Rectifier
Part No. IRHE57Z30 IRHE58Z30
OCR Text ...n) i d irhe57z30 100k rads (si) 0.07 ? 12a irhe53z30 300k rads (si) 0.07 ? 12a irhe54z30 600k rads (si) 0.07 ? 12a ...rectifier radiation hardened mosfets are tested to verify their radiation hardness capability. the h...
Description 30V 100kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a 18-pin LCC package
30V 1000kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a 18-pin LCC package

File Size 117.45K  /  8 Page

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    IRHM8360 IRHM7360

IRF[International Rectifier]
Part No. IRHM8360 IRHM7360
OCR Text ...ion doses as high as 1x106 Rads(Si). Under identical pre- and post-irradiation test conditions, International Rectifier's RAD HARD HEXFETs retain identical electrical specifications up to 1 x 105 Rads (Si) total dose. No compensation in gat...
Description REPETITIVE AVALANCHE AND dv/dt RATED
HEXFET? TRANSISTOR

File Size 318.57K  /  12 Page

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    IRHY7230CM IRHY3230CM IRHY8230CM IRHY4230CM JANSF2N7381 JANSG2N7381 JANSH2N7381 JANSR2N7381

IRF[International Rectifier]
Part No. IRHY7230CM IRHY3230CM IRHY8230CM IRHY4230CM JANSF2N7381 JANSG2N7381 JANSH2N7381 JANSR2N7381
OCR Text ...30CM Radiation Level 100K Rads (Si) 300K Rads (Si) 600K Rads (Si) 1000K Rads (Si) RDS(on) 0.40 0.40 0.40 0.40 IRHY7230CM JANSR2N7381 200V...Rectifier's RADHard technology provides high performance power MOSFETs for space applications. This ...
Description RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-257AA)
200V 300kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a TO-257AA package
200V 600kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a TO-257AA package
200V 1000kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a TO-257AA package
200V 100kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a TO-257AA package

File Size 102.98K  /  8 Page

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    IRHF7330SE

International Rectifier
Part No. IRHF7330SE
OCR Text ... hardened up to 1 x 10 5 rads (si) n single event burnout (seb) hardened n single event gate rupture (segr) hardened n gamma dot (flash x-r...rectifier radiation hardened hexfets are tested to verify their hardness capability. the hard- ness ...
Description N-Channel Single Event Effect (SEE) Rad Hard HEXFET Transistor(N 娌?? ???浠舵?搴?Rad Hard HEXFET????朵?绠々

File Size 94.41K  /  8 Page

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    IRHNB7Z60 IRHNB8Z60

International Rectifier
Part No. IRHNB7Z60 IRHNB8Z60
OCR Text ...cifications up to 1 x 105 Rads (Si) total dose. No compensation in gate drive circuitry is required. These devices are also capable of survi...Rectifier's patented HEXFET technology, the user can expect the highest quality and reliability in t...
Description 30Volt,0.009Ω,MEGA RAD HARD HEXFET(30V,0.009Ω,MEGA 抗辐射N沟道HEXFET晶体

File Size 110.79K  /  8 Page

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    IRHQ9110

International Rectifier
Part No. IRHQ9110
OCR Text ...d irhq9110 100k rads (si) 1.1 ? -2.3a irhq93110 300k rads (si) 1.1 ? -2.3a irhq9110 100v, quad p-channel rad-har...rectifier website. www.irf.com 3 pre-irradiation irhq9110 table 1. electrical characteristics @ tj...
Description RADIATION HARDENED POWER MOSFET SURFACE MOUNT (LCC-28)

File Size 126.71K  /  8 Page

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    IRHNA7Z60 IRHNA8Z60

International Rectifier
Part No. IRHNA7Z60 IRHNA8Z60
OCR Text ...cifications up to 1 x 105 Rads (Si) total dose. No compensation in gate drive circuitry is required. These devices are also capable of survi...Rectifier's patented HEXFET technology, the user can expect the highest quality and reliability in t...
Description 30Volt, 0.009Ω, RAD HARD HEXFET(30V, 0.009Ω,抗辐射N沟道HEXFET晶体

File Size 127.16K  /  8 Page

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    IRHNA57Z60

International Rectifier
Part No. IRHNA57Z60
OCR Text ...mber irhna57z60 100k rads (si) 0.0035 ? 75a* jansr2n7467u2 irhna53z60 300k rads (si) 0.0035 ? 75a* jansf2n7467u2 ir...rectifier web site. for footnotes refer to the last page * current is limited by package 4 .com ...
Description (IRHNA5xZ60) RADIATION HARDENED POWER MOSFET

File Size 271.05K  /  8 Page

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    IRHNB8260

International Rectifier
Part No. IRHNB8260
OCR Text ... hardened up to 1 x 10 6 rads (si) single event burnout (seb) hardened single event gate rupture (segr) hardened gamma dot (flash x-r...rectifier?s rad hard technology hexfets demonstrate immunity to see failure. ad- ditionally, under ...
Description 200Volt,0.070惟, N-Channel MEGA RAD HARD HEXFET(200V,0.070惟,MEGA ???灏?娌??HEXFET?朵?绠?

File Size 109.44K  /  8 Page

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