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  tmos e-fet high energy power f Datasheet PDF File

For tmos e-fet high energy power f Found Datasheets File :: 150+       Page :: | 1 | 2 | 3 | 4 | <5> | 6 | 7 | 8 | 9 | 10 | 11 | 12 | 13 | 14 | 15 |   

    MTV25N50E MTV25N50E_D ON2672 MTV25N50E-D

ON Semiconductor
MOTOROLA[Motorola, Inc]
Part No. MTV25N50E MTV25N50E_D ON2672 MTV25N50E-D
Description <font color='#ff0000'>tmosfont> <font color='#ff0000'>e-fetfont> <font color='#ff0000'>powerfont> field Effect Transistor D3PAK for Surface Mount N-Channel Enhancement - Mode Silicon Gate
<font color='#ff0000'>tmosfont> <font color='#ff0000'>powerfont> fET 25 AMPERES 500 VOLTS RDS(on) = 0.200 OHM
from old datasheet system

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    MTP4N80E_D ON2614 ON2613 MTP4N80 MTP4N80E MTP4N80E-D

ON Semiconductor
Motorola, Inc
Motorola Mobility Holdings, Inc.
Part No. MTP4N80E_D ON2614 ON2613 MTP4N80 MTP4N80E MTP4N80E-D
Description <font color='#ff0000'>tmosfont> <font color='#ff0000'>e-fetfont> <font color='#ff0000'>powerfont> field Effect Transistor N-Channel Enhancement-Mode Silicon Gate
from old datasheet system
<font color='#ff0000'>tmosfont> <font color='#ff0000'>powerfont> fET 4.0 AMPERES 800 VOLTS RDS(on) = 3.0 OHM <font color='#ff0000'>tmosfont>是功率场效应晶体.0安培800伏特的RDSon)\u003d 3.0欧姆

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    MTD6N10E ON2512 MTD6N10E-D

ON Semiconductor
MOTOROLA[Motorola, Inc]
Part No. MTD6N10E ON2512 MTD6N10E-D
Description <font color='#ff0000'>tmosfont> <font color='#ff0000'>e-fetfont> <font color='#ff0000'>powerfont> field Effect Transistor DPAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate
<font color='#ff0000'>tmosfont> <font color='#ff0000'>powerfont> fET 6.0 AMPERES 100 VOLTS RDS(on) = 0.400 OHM
from old datasheet system

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    MTP3N100E MTP3N100E_D ON2598 3N100E MTP3N100E-D

MOTOROLA[Motorola, Inc]
Motorola, Inc.
ON SEMICONDUCTOR
Part No. MTP3N100E MTP3N100E_D ON2598 3N100E MTP3N100E-D
Description <font color='#ff0000'>tmosfont> <font color='#ff0000'>e-fetfont> <font color='#ff0000'>powerfont> field Effect Transistor N-Channel Enhancement-Mode Silicon Gate
from old datasheet system
<font color='#ff0000'>tmosfont> <font color='#ff0000'>powerfont> fET 3.0 AMPERES 1000 VOLTS RDS(on) = 4.0 OHM
3 A, 1000 V, 4 ohm, N-CHANNEL, Si, <font color='#ff0000'>powerfont>, MOSfET, TO-220AB

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    IRF540_D ON0285 IRF540/D IRF540-D IRF540

Motorola, Inc.
ON Semiconductor
Part No. IRf540_D ON0285 IRf540/D IRf540-D IRf540
Description 27 A, 100 V, 0.07 ohm, N-CHANNEL, Si, <font color='#ff0000'>powerfont>, MOSfET, TO-220AB
100V7A <font color='#ff0000'>tmosfont> <font color='#ff0000'>powerfont> field Effect Transistor (N-Channel Enhancement Mode Silicon Gate100V7A <font color='#ff0000'>tmosfont>功率场效应管(N沟道增强型硅门))
from old datasheet system
<font color='#ff0000'>tmosfont> <font color='#ff0000'>powerfont> fET 27 AMPERES
<font color='#ff0000'>tmosfont> <font color='#ff0000'>e-fetfont> <font color='#ff0000'>powerfont> field Effect Transistor N-Channel Enhancement-Mode Silicon Gate

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    MTV16N50E MTV16N50E_D ON2670 MTV16N50E-D TV16N50E

ETC
Motorola, Inc
ON Semiconductor
Part No. MTV16N50E MTV16N50E_D ON2670 MTV16N50E-D TV16N50E
Description 16 A, 500 V, 0.4 ohm, N-CHANNEL, Si, <font color='#ff0000'>powerfont>, MOSfET
from old datasheet system
<font color='#ff0000'>tmosfont> <font color='#ff0000'>powerfont> fET 16 AMPERES 500 VOLTS RDS(on) = 0.40 OHM
<font color='#ff0000'>tmosfont> <font color='#ff0000'>e-fetfont> <font color='#ff0000'>powerfont> field Effect Transistor D3PAK for Surface Mount N-Channel Enhancement - Mode Silicon Gate

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    MTP9N25E MTP9N25 MTP9N25E-D

Motorola Mobility Holdings, Inc.
MOTOROLA[Motorola, Inc]
ON Semiconductor
Part No. MTP9N25E MTP9N25 MTP9N25E-D
Description <font color='#ff0000'>tmosfont> <font color='#ff0000'>powerfont> fET 9.0 AMPERES 250 VOLTS RDS(on) = 0.45 OHM 9 A, 250 V, 0.45 ohm, N-CHANNEL, Si, <font color='#ff0000'>powerfont>, MOSfET, TO-220AB
<font color='#ff0000'>tmosfont> <font color='#ff0000'>e-fetfont> <font color='#ff0000'>powerfont> field Effect Transistor N-Channel Enhancement-Mode Silicon Gate

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    MTP4N40E MTP4N40E-D

Motorola Mobility Holdings, Inc.
Motorola, Inc
ON Semiconductor
Part No. MTP4N40E MTP4N40E-D
Description <font color='#ff0000'>tmosfont> <font color='#ff0000'>powerfont> fET 4.0 AMPERES 400 VOLTS RDS(on) = 1.8 OHM 4 A, 400 V, 1.8 ohm, N-CHANNEL, Si, <font color='#ff0000'>powerfont>, MOSfET, TO-220AB
<font color='#ff0000'>tmosfont> <font color='#ff0000'>e-fetfont> <font color='#ff0000'>powerfont> field Effect Transistor N-Channel Enhancement-Mode Silicon Gate

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    IRF530_D ON0283 IRF530-D IRF530/D

Motorola, Inc.
ON Semiconductor
Part No. IRf530_D ON0283 IRf530-D IRf530/D
Description 100V4A <font color='#ff0000'>tmosfont> <font color='#ff0000'>powerfont> field Effect Transistor (N-Channel Enhancement Mode Silicon Gate100V4A <font color='#ff0000'>tmosfont>功率场效应管(N沟道增强型硅门))
<font color='#ff0000'>tmosfont> <font color='#ff0000'>powerfont> fET 14 AMPERES
from old datasheet system
<font color='#ff0000'>tmosfont> <font color='#ff0000'>e-fetfont> <font color='#ff0000'>powerfont> field Effect Transistor N-Channel Enhancement-Mode Silicon Gate

File Size 162.84K  /  8 Page

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    MMFT5P03HD ON2230 MMFT5P03HDT3 ON2229

MOTOROLA[Motorola, Inc]
Part No. MMfT5P03HD ON2230 MMfT5P03HDT3 ON2229
Description <font color='#ff0000'>tmosfont> MEDIUM <font color='#ff0000'>powerfont> fET 5.2 AMPERES 30 VOLTS
from old datasheet system
<font color='#ff0000'>tmosfont> P-CHANNEL fIELD fEECT TRANSISTOR

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For tmos e-fet high energy power f Found Datasheets File :: 150+       Page :: | 1 | 2 | 3 | 4 | <5> | 6 | 7 | 8 | 9 | 10 | 11 | 12 | 13 | 14 | 15 |   

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