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  to262-7 Datasheet PDF File

For to262-7 Found Datasheets File :: 322    Search Time::1.265ms    
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    IPB12CN10NG

Infineon Technologies AG
Part No. IPB12CN10NG
OCR Text ...ackage pg-to263-3 pg-to252-3 pg-to262-3 pg-to220-3 marking 12cn10n 12cn10n 12cn10n 12cn10n rev. 1.02 page 1 2006-06-02 ipb12cn10n g ip...7 typ. transfer characteristics 8 typ. forward transconductance i d =f( v gs ); | v ds |>2| i d | r ...
Description OptiMOS?? Power-Transistor

File Size 616.62K  /  12 Page

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    IPI12CNE8NG IPB12CNE8NG IPD12CNE8NG IPP12CNE8N IPP12CNE8NG

Infineon Technologies AG
Part No. IPI12CNE8NG IPB12CNE8NG IPD12CNE8NG IPP12CNE8N IPP12CNE8NG
OCR Text ...E8N PG-TO252-3 12CNE8N PG-TO262-3 12CNE8N PG-TO220-3 12CNE8N Maximum ratings, at T j=25 C, unless otherwise specified Parameter ...7 1.5 77 12.9 S 4) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm 2 (one layer, ...
Description OptiMOS Power-Transistor 的OptiMOS功率晶体
OPTIMOS⑶2 POWER-TRANSISTOR
OptiMOS㈢2 Power-Transistor
OptiMOS?2 Power-Transistor

File Size 555.03K  /  12 Page

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    IPP04N03LA IPI04N03LA IPI04N03LA07

Infineon Technologies AG
Part No. IPP04N03LA IPI04N03LA IPI04N03LA07
OCR Text ...n),max ID 25 4.2 80 V m A PG-TO262-3 PG-TO220-3 Type IPI04N03LA IPP04N03LA Package PG-TO262-3 PG-TO220-3 Marking 04N03LA 04N0...7 nA m 43 3.5 1.1 85 4.2 S 2) Current is limited by bondwire; with an R thJC=1.4 K/W ...
Description OptiMOS庐2 Power-Transistor
OptiMOS?2 Power-Transistor

File Size 298.49K  /  10 Page

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    IPP06N03LA

INFINEON TECHNOLOGIES AG
Part No. IPP06N03LA
OCR Text ...product summary pg-to220-3-1 pg-to262-3-1 type package marking ipi06n03la pg-to262-3-1 06n03la ipp06n03la pg-to200-3-1 06n03la rev. 1.91 pag...7.9 9.9 m ? v gs =10 v, i d =30 a - 5.2 6.2 gate resistance r g - 1.2 - ? transconductance g fs | v...
Description 50 A, 25 V, 0.0099 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB

File Size 289.89K  /  10 Page

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    IPI35CN10NG IPB35CN10NG IPD33CN10NG IPP35CN10N IPP35CN10NG IPU33CN10NG

INFINEON[Infineon Technologies AG]
Part No. IPI35CN10NG IPB35CN10NG IPD33CN10NG IPP35CN10N IPP35CN10NG IPU33CN10NG
OCR Text ...10N PG-TO252-3 33CN10N PG-TO262-3 35CN10N PG-TO220-3 35CN10N PG-TO251-3 33CN10N Maximum ratings, at T j=25 C, unless otherwis...7 4 7 18 5.6 18 9 6 11 24 24 nC V nC IS I S,pulse V SD t rr Q rr T C=25 C V GS=0 V, I...
Description OptiMOS?2 Power-Transistor
OptiMOS㈢2 Power-Transistor
OPTIMOS⑶2 POWER-TRANSISTOR

File Size 705.74K  /  13 Page

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    IPI60R125CP

Infineon Technologies AG
Part No. IPI60R125CP
OCR Text ... 0.125 53 nC PG-TO220 PG-TO262 CoolMOS CP is specially designed for: * Hard switching topologies, for Server and Telecom Type I...7 Drain-source on-state resistance R DS(on)=f(T j); I D=16 A; V GS=10 V 8 Typ. transfer character...
Description CoolMOSTM Power Transistor

File Size 267.22K  /  10 Page

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    IPB79CN10N-G IPP80CN10N-G IPB79CN10NG IPD78CN10NG

Infineon Technologies AG
Infineon Technologies A...
Part No. IPB79CN10N-G IPP80CN10N-G IPB79CN10NG IPD78CN10NG
OCR Text ...263 - 3 pg - to252 - 3 pg - to262 - 3 pg - to220 - 3 marking 79cn10n 78cn10n 80cn10n 80cn10n rev. 1.091 page 1 2013-07-25 ...7 13 - s values 4) device on 40 mm x 40 mm x 1.5 mm epoxy pcb fr4 with 6 cm 2 (one layer, 70 m thi...
Description N-channel, normal level

File Size 1,009.13K  /  12 Page

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    SPI08N80C3

Infineon Technologies AG
Infineon Technologies A...
Part No. SPI08N80C3
OCR Text ...Q g,typ 800 0.65 45 V nC PG-TO262-3 CoolMOSTM 800V designed for: * Industrial application with high DC bulk voltage * Switching Appli...7 24 1.2 - V ns C A V R=400 V, I F=I S=8 A, di F/dt =100 A/s - J-STD20 and JESD22 Pul...
Description CoolMOSTM Power Transistor Features New revolutionary high voltage technology
   CoolMOSTM Power Transistor Features New revolutionary high voltage technology

File Size 357.25K  /  10 Page

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    IPI075N15N3G

Infineon Technologies AG
Part No. IPI075N15N3G
OCR Text ...15N PG-TO220-3 075N15N PG-TO262-3 075N15N Maximum ratings, at T j=25 C, unless otherwise specified Parameter Continuous drain curre...7.5 nA m - 5.8 7.2 - 6.4 7.7 65 6.0 2.3 130 7.4 S 3) 2 Device on 40 m...
Description OptiMOS?? Power-Transistor Features Excellent gate charge x R DS(on) product (FOM)

File Size 417.55K  /  11 Page

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    Infineon Technologies A...
INFINEON[Infineon Technologies AG]
Part No. SPP42N03S2L-13 SPB42N03S2L-13 SPI42N03S2L-13
OCR Text ...valanche rated * dv /dt rated P-TO262-3-1 Product Summary V DS R DS(on),max ID 30 12.9 42 V m A P-TO263-3-2 P-TO220-3-1 Type SPP...7 7.9 22.9 3.5 3.6 11.9 30.5 V nC C iss C oss Crss t d(on) tr t d(off) tf V DD=15 V, V GS=10 V, I D=...
Description OptiMOS Power-Transistor
42 A, 30 V, 0.0199 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA

File Size 538.63K  /  10 Page

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