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Diodes, inc.
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| Part No. |
iRGRDN400K06
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| Description |
transistor | igbt power module | iNDEPENDENT | 600V V(BR)CES | 520A i(C) 晶体管| igbt功率模块|独立| 600V的五（巴西）国际消费电子展| 520A一（c
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| File Size |
135.74K /
2 Page |
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it Online |
Download Datasheet
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iTT, Corp.
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| Part No. |
GP400LSS12S
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| Description |
transistor | igbt power module | iNDEPENDENT | 1.2KV V(BR)CES | 400A i(C) 晶体管| igbt功率模块|独立| 1.2KV五（巴西）国际消费电子展|四楼一（c
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| File Size |
441.28K /
9 Page |
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it Online |
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ECM Electronics, Ltd.
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| Part No. |
FS8R12KF
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| Description |
transistor | igbt power module | 3-PH BRiDGE | 1.2KV V(BR)CES | 8A i(C) 晶体管| igbt功率模块| 3 - PH值大桥| 1.2KV五（巴西）国际消费电子展| 8A条一（c
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| File Size |
39.16K /
1 Page |
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it Online |
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TE Connectivity, Ltd.
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| Part No. |
GP300LSS16S
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| Description |
transistor | igbt power module | iNDEPENDENT | 1.6KV V(BR)CES | 300A i(C) 晶体管| igbt功率模块|独立| 1.6KV五（巴西）国际消费电子展| 300我（丙）
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| File Size |
352.64K /
8 Page |
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it Online |
Download Datasheet |
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Mitsubishi Electric, Corp.
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| Part No. |
PM600HHA060
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| Description |
transistor | igbt power module | iNDEPENDENT | 600V V(BR)CES | 600A i(C) 晶体管| igbt功率模块|独立| 600V的五（巴西）国际消费电子展| 601余（丙）
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| File Size |
332.88K /
6 Page |
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it Online |
Download Datasheet |
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iTT, Corp.
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| Part No. |
CM10MD24H
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| Description |
transistor | igbt power module | 3-PH BRiDGE | 1.2KV V(BR)CES | 20A i(C) 晶体管| igbt功率模块| 3 - PH值大桥| 1.2KV五（巴西）国际消费电子展|甲一（c
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| File Size |
270.75K /
5 Page |
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it Online |
Download Datasheet |
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powerex, inc.
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| Part No. |
CM600E2Y34H
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| Description |
transistor | igbt power module | iNDEPENDENT | 1.7KV V(BR)CES | 600A i(C) 晶体管| igbt功率模块|独立| 1.7KV五（巴西）国际消费电子展| 601余（丙）
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| File Size |
109.46K /
2 Page |
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it Online |
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iDT[integrated Device Technology]
integrated Device Technology, inc.
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| Part No. |
iDT5993A-5Qi iDT5993A-5Q 5993A_DATASHEET iDT5993A-7Qi iDT5993A iDT5993A-2Q iDT5993A-2Qi iDT5993A-7Q iDT5993A-5Qi8 iDT5993A-2Q8 iDT5993A-7Qi8
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| Description |
From old datasheet system
igbt module; Continuous Collector Current, ic:400A; Collector Emitter Saturation Voltage, Vce(sat):1.7V; power Dissipation, Pd:890W; Collector Emitter Voltage, Vceo:250V; Package/Case:module; transistor Polarity:N Channel RoHS Compliant: Yes
igbt module; Continuous Collector Current, ic:400A; Collector Emitter Saturation Voltage, Vce(sat):2.8V; power Dissipation, Pd:1500W; Collector Current:400A; Collector Emitter Voltage, Vceo:600V; Leaded Process Compatible:No RoHS Compliant: No
igbt module; Continuous Collector Current, ic:30A; Collector Emitter Saturation Voltage, Vce(sat):2.8V; power Dissipation, Pd:150W; Collector Current:30A; Collector Emitter Voltage, Vceo:600V; Leaded Process Compatible:No RoHS Compliant: No
igbt module; Continuous Collector Current, ic:400A; Collector Emitter Saturation Voltage, Vce(sat):2.2V; power Dissipation, Pd:960W; Collector Emitter Voltage, Vceo:600V; Package/Case:module; transistor Polarity:N Channel RoHS Compliant: Yes
PROGRAMMABLE SKEW PLL CLOCK DRiVER TURBOCLOCK PLL BASED CLOCK DRiVER, 8 TRUE OUTPUT(S), 0 iNVERTED OUTPUT(S), PDSO28
Scan Test Devices With 18-Bit Universal Bus Transceiver 64-LQFP -40 to 85 可编程相偏PLL时钟驱动器TURBOCLOCK
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| File Size |
62.51K /
8 Page |
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it Online |
Download Datasheet |
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TOSHiBA[Toshiba Semiconductor]
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| Part No. |
MP4015
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| Description |
power transistor module Silicon NPN Triple Diffused Type (Darlington power transistor 4 in 1) High power Switching Applications. Hammer Drive, Pulse Motor Drive. inductive Load Switching.
TOSHiBA power transistor module
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| File Size |
129.83K /
4 Page |
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it Online |
Download Datasheet |
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TOSHiBA[Toshiba Semiconductor]
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| Part No. |
MiG100Q6CMB1X
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| Description |
intelligent power module Silicon N Channel igbt High power Switching Applications Motor Control Applications
TOSHiBA intelligent power module Silicon N Channel igbt
From old datasheet system
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| File Size |
154.11K /
11 Page |
View
it Online |
Download Datasheet |
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Price and Availability
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