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LN9840 ZX79C 0LVELT2 A5800 MSK3002 G1000 6404A 73F07
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For unit source Found Datasheets File :: 85858    Search Time::1.719ms    
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    RJK03M5DPA-00-J5A

Renesas Electronics Corporation
Part No. RJK03M5DPA-00-J5A
OCR Text ...ta = 25c) item symbol ratings unit drain to source voltage v dss 30 v gate to source voltage v gss 20 v drain current i d 30 a drain peak current i d(pulse) note1 120 a body-drain diode reverse drain current i dr 30 a ...
Description 30V, 30A, 6.5mmax.N Channel Power MOS FET

File Size 139.65K  /  7 Page

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    RJK03M0DPA RJK03M0DPA-00-J5A

Renesas Electronics Corporation
Part No. RJK03M0DPA RJK03M0DPA-00-J5A
OCR Text ...ta = 25c) item symbol ratings unit drain to source voltage v dss 30 v gate to source voltage v gss 20 v drain current i d 65 a drain peak current i d(pulse) note1 260 a body-drain diode reverse drain current i dr 65 a ...
Description 30V, 65A, 1.9mΩmax N Channel Power MOS FET

File Size 170.04K  /  7 Page

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    BTS117

INFINEON TECHNOLOGIES AG
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
Part No. BTS117
OCR Text ...ue 60 32 mA no limit | IIN | 2 unit V VDS VDS(SC) IIN VIN < -0.2V or VIN > 10V Operating temperature Storage temperature Power dissi...source clamp voltage Symbol min. Values typ. 1.7 30 120 2200 max. 73 5 2.2 60 300 4000 V A V A unit ...
Description 10 A BUF OR INV BASED PRPHL DRVR, PSFM3
Smart Lowside Power Switch (Logic Level Input Input Protection ESD Thermal Shutdown Overload protection)
From old datasheet system

File Size 137.31K  /  10 Page

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    BTS118D

Infineon Technologies A...
INFINEON[Infineon Technologies AG]
Part No. BTS118D
OCR Text ...n 2 and 4 (TAB) Gate-Driving unit Overtemperature Protection ESD Overload Protection Short circuit Protection Pin 3 source Complete product spectrum and additional information http://www.infineon.com/hitfet Page 1 2004-0...
Description Smart Lowside Power Switch

File Size 331.57K  /  10 Page

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    BTS120 C67078-A5009-A2

SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
Infineon
Part No. BTS120 C67078-A5009-A2
OCR Text ...55/150/56 K/W 1.67 75 C - W A unit V VDS VDGR VGS ID ID-ISO ID puls ISC PSCmax Ptot Tj, Tstg - - TC = 25 C Tj = - 55 ... + 150 C ...source breakdown voltage VGS = 0, ID = 0.25 mA Gate threshold voltage VGS = VDS, ID = 1 mA Zero gate...
Description From old datasheet system
TEMPFET (N channel Enhancement mode Temperature sensor with thyristor characteristic)
N-Channel TEMPFET

File Size 310.34K  /  9 Page

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    BUK9504-40A

Philips Semiconductors
NXP
Part No. BUK9504-40A
OCR Text ...ol parameter conditions typ max unit v ds drain-source voltage (dc) - 40 v i d drain current (dc) t mb =25 c; v gs =5v [1] - 198 a p tot total power dissipation t mb =25 c - 300 w t j junction temperature - 175 c r dson drain-source on-s...
Description (BUK9x04-40A) TrenchMOS logic level FET

File Size 202.03K  /  15 Page

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    BUK7208-40B

NXP Semiconductors
Part No. BUK7208-40B
OCR Text ...ol parameter conditions min max unit v ds drain-source voltage (dc) - 40 v v dgr drain-gate voltage (dc) r gs =20k w -40v v gs gate-source voltage (dc) - 20 v i d drain current (dc) t mb =25 c; v gs =10v; figure 2 and 3 [1] - 105 a [2] -...
Description TrenchMOS standard level FET

File Size 120.94K  /  12 Page

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    ST Microelectronics
Part No. STB160NF3LL
OCR Text ...d = 20v symbol parameter value unit v ds drain-source voltage (v gs = 0) 30 v v dgr drain-gate voltage (r gs = 20 k w ) 30 v v gs gate- source voltage 15 v i d ( * ) drain current (continuous) at t c = 25c 160 a i d drain current (cont...
Description N-CHANNEL POWER MOSFET

File Size 160.53K  /  7 Page

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    AS1106WE-T

Austriamicrosystems AG
Part No. AS1106WE-T
OCR Text ...arameter conditions min typ max unit t amb operating temperature range -40 +85 oc v dd operating supply voltage 2.7 5.0 5.5 v i ddsd shutdow...source current v dd = 5.0v, v out = (v dd -1v) -30 -40 -45 ma i seg / t segment current slew ra...
Description 8-digit, 5mA, serial Int.; Package Type: SOIC-24; Temperature Range: -40 - 85 °C LED DISPLAY DRIVER, PDSO24

File Size 630.38K  /  21 Page

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    Microsemi, Corp.
Part No. APT10M11JVFR
OCR Text unit volts amps volts watts w/c c amps mj unit volts amps ohms a na volts min typ max 100 144 0.011 250 1000 100 24 apt10m11jvfr 100 144 576...source breakdown voltage (v gs = 0v, i d = 250a) on state drain current 2 (v ds > i d(on)...
Description Power FREDFET; Package: ISOTOP&#174;; ID (A): 144; RDS(on) (Ohms): 0.011; BVDSS (V): 100; 144 A, 100 V, 0.011 ohm, N-CHANNEL, Si, POWER, MOSFET

File Size 117.53K  /  4 Page

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