...0 (-)60 (-)5 (-)5 (-)7 1.3 Unit v v v A A W W
1.7
2.4
1 : Base 2 : Collector 3 : Emitter SANYO : TO126ML
Tc=25C
10 150 -55 to...0 vEB=(-)4v, IC=0 vCE=(-)2v, IC=(-)1A vCE=(-)5v, IC=(-)1A IC=(-)2.5A, IB=(-)0.125A 110 100 (-)0.4 Co...
...00 0.55 150 -55 to +150
Unit v v v A A mA W
C C
Electrical Characteristics at Ta = 25C
Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Output Capacitance Collector-to-Emitter Saturati...
...2.5 140 150 -55 to +150
Unit v v v A A W W C C
Electrical Characteristics at Ta=25C
Parameter Collector Cutoff Current Emitter Cutoff...0 vEB=(--)4v, IC=0 vCE=(--)5v, IC=(--)1A vCE=(--)5v, IC=(--)7.5A Ratings min typ max (--)0.1 (--)0.1...
...1.2 1.2 10 150 -55 to +150 Unit v v v A A A W W C C
Any and all SANYO products described or contained herein do not have specifications t...0 vEB=(--)4v, IC=0 vCE=(--)2v, IC=(-)1A vCE=(--)10v, IC=(--)500mA vCB=(--)10v, f=1MHz IC=(--)2.5A, I...
....2 0.8 15 150 --55 to +150 Unit v v v v A A A W W C C
Electrical Characteristics at Ta=25C
Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Output Capacitance Collector-to-Emitter Saturati...
Description
Low-Power, Single/Dual-voltage µP Reset Circuits with Capacitor-Adjustable Reset Timeout Delay TRANSISTOR | BJT | NPN | 50v v(BR)CEO | 5A I(C) | TO-251vAR 5-Pin µP Supervisory Circuits with Watchdog and Manual Reset TRANSISTOR | BJT | PNP | 50v v(BR)CEO | 5A I(C) | TO-252vAR Low-Power, Single/Dual-voltage µP Reset Circuits with Capacitor-Adjustable Reset Timeout Delay PNP/NPN Epitaxial Planar Silicon Transistors NPN Epitaxial Planar Silicon Transistors High Current Switching Applications PNP Epitaxial Planar Silicon Transistors High Current Switching Applications 5000 mA, 50 v, NPN, Si, SMALL SIGNAL TRANSISTOR
...-)2 1.0 15 150 -55 to +150 Unit v v v v A A A W W C C
Electrical Characteristics at Ta=25C
Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Output Capacitance Collector-to-Emitter Saturati...
...)1.2 1 15 150 --55 to +150 Unit v v v A A A W W C C
Electrical Characteristics at Ta=25C
Parameter Collector Cutoff Current Emitter Cuto...0 vEB=(--)4v, IC=0 vCE=(--)2v, IC=(-)500mA vCE=(--)2v, IC=(-)500mA vCB=(--)10v, f=1MHz IC=(--)3A, IB...
...)1.2 1 15 150 --55 to +150 Unit v v v A A A W W C C
Electrical Characteristics at Ta=25C
Parameter Collector Cutoff Current Emitter Cuto...0 vEB=(--)4v, IC=0 vCE=(--)2v, IC=(-)500mA vCE=(--)10v, IC=(--)500mA vCB=(--)10v, f=1MHz IC=(--)4A, ...
...0 -2.0 500 150 -55~+150
Unit v v v A A 1 mW 2 C C
0
0.3
0.6
Each lead has same dimensions
0.7 0.85
1/3
2SA2048
Transistor
!Electrical characteristics (Ta=25C)
Parameter Symbol Min. Typ. Max. Unit Conditions BvCBO ...
Description
Medium power transistor (−30v, −1.0A) Medium power transistor (-30v, -1.0A)