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4LCX1 V3023 4LCX1 BU402 ST19SF02 TVR4J MZ55B43 01500
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For variation Found Datasheets File :: 29019    Search Time::1.094ms    
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    Diodes
Part No. DMG2305UX
OCR Text ... c) j ? figure 5 on-resistance variation with temperature r , d r ai n -s o u r c e on-resistance (normalized) ds(on) 0.6 0.8 1 1.2 1.4 1.6 v = -4.5v i = -10a gs d v = -2.5v i = -5.0a gs d t , junction temperature ( c) j ? figure 6 on-r...
Description P-CHANNEL ENHANCEMENT MODE MOSFET

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    KDV303N

Guangdong Kexin Industrial Co.,Ltd
Part No. KDV303N
OCR Text ...ics. Figure 2. On-Resistance variation with Drain Current and Gate Voltage. 1.6 DRAIN-SOURCE ON-RESISTANCE 2 I D =0.5 A R DS(on) , ON-RESISTANCE (OHM) ID= 0.5A 1.6 R DS(ON), NORMALIZED 1.4 VGS = 4.5 V 1.2 1.2...
Description Digital FET, N-Channel

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    TS1220-600B-TR TS1220-600H TS1220-600H-TR TS1220-700B TS1220-700B-TR TS1220-700H TS1220-700H-TR TYN100012 TYN100012T TYN

ST Microelectronics
STMicroelectronics
Part No. TS1220-600B-TR TS1220-600H TS1220-600H-TR TS1220-700B TS1220-700B-TR TS1220-700H TS1220-700H-TR TYN100012 TYN100012T TYN60012 TYN60012T TYN612 TYN612T TYN80012 TYN80012T TN12 TN1215-1000B-TR TN1215-1000G-TR TN1215-1000H-TR TN1215-600B-TR TN1215-600G-TR TN1215-600H-TR TN1215-800B-TR TN1215-800G-TR TN1215-800H-TR TN1220-600B-TR TN1220-600H-TR TN1220-700B-TR TN1220-700H-TR
OCR Text ...DC D 2PAK Fig. 3-1: Relative variation of thermal impedance junction to case versus pulse duration. K = [Zth(j-c)/Rth(j-c)] 1.0 0.5 0.2 tp(s) 0.1 1E-3 1E-2 1E-1 1E+0 4/10 TN12, TS12 and TYNx12 Series Fig. 3-2: Relative ...
Description SENSITIVE & STANDARD(12A SCRs)

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    TS1220 TS1220-600B 5849

STMICROELECTRONICS[STMicroelectronics]
Part No. TS1220 TS1220-600B 5849
OCR Text ...0 75 100 125 Fig 4: Relative variation of thermal impedance junction to case versus pulse duration. Fig 4-2: Relative variation of thermal impedance junction to ambient versus pulse duration (recomended pad layout). K=[Zth(j-a)/Rth(j...
Description From old datasheet system
SENSITIVE SCR

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    Xian Semipower Electronic T...
Part No. SW75N75
OCR Text ...ristics fig. 2. on - resistance variation vs. drain current and gate voltage fig. 3. gate charge characteristics sw75n75 notes: 1. 250s pulse test 2. t=25 3. vgs 2~10v step=1v vgs=20v vgs=10v 0.0 2.0 4.0 6.0 8.0 10.0 12.0 0.0 ...
Description N-channel mosfet

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    Xian Semipower Electronic T...
Part No. SW75N08
OCR Text ...stics fig. 2. on - resistance variation vs. drain current and gate voltage fig. 3. gate charge characteristics sw75n08 samwin fig. 4. on state current vs. diode forward voltage fig 5. breakdown volta...
Description N-channel TO-220 MOSFET

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    ICS9DBL411

Integrated Device Technology
Part No. ICS9DBL411
OCR Text ...alling Edge Slew Rate Slew Rate variation Maximum Output Voltage Minimum Output Voltage Differential Voltage Swing Crossing Point Voltage Crossing Point variation Duty Cycle Distortion DIF Jitter - Cycle to Cycle DIF[3:0] Skew Propagation D...
Description Four Output Differential Fanout Buffer for PCI Express Gen 1 & 2

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    LT5581 LT5581IDDB-PBF LT5581IDDB-TRPBF

Linear Technology
Part No. LT5581 LT5581IDDB-PBF LT5581IDDB-TRPBF
OCR Text ...thmic Intercept (Note 5) Output variation vs Temperature Output variation vs Temperature Deviation from CW Response; PIN = -34dBm to 0dBm Normalized to Output at 25C, -40C < TA < 85C; PIN = -34 to +6dBm Normalized to Output at 25C, -40C < T...
Description 6GHz RMS Power Detector with 40dB Dynamic Range

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    FSP3601 FSP3601MSAH FSP3601MSH FSP3601SAH FSP3601SH FSP3601TSAH FSP3601TSH

FOSLINK SEMICONDUCTOR CO.,LTD
Part No. FSP3601 FSP3601MSAH FSP3601MSH FSP3601SAH FSP3601SH FSP3601TSAH FSP3601TSH
OCR Text ... 20 Input threshold voltage variation ratio V/Vt (%) Ambient temperature vs.Input threshold voltage variation ratio 30 10 5 0 -5 Input threshold voltage Vt (V) Supply voltage vs. Supply current 12 High level output 1.2 High ...
Description STEP-UP DC/DC CONTROLLER

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