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vgdo Datasheet PDF File

For vgdo Found Datasheets File :: 363 Search Time::2.875ms
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				panasonic
Part No.	2SK0065 2SK65
OCR Text	...Storage temperature Symbol VDSO vgdo IDSO IDGO IGSO PD Topr Tstg Ratings 12 -12 2 2 2 20 -10 to +70 -20 to +150 Unit V V mA mA mA mW C C 1 2 3 0.45+0.20 -0.10 (2.5) (2.5) 0.45+0.20 -0.10 0.70.1 15.60.5 (0.8) 0.75 max. 7.6 1:...
Description	Small-signal device - Small-signal FETs - Junction FETs NS-A1
File Size	73.38K / 3 Page	View it Online	Download Datasheet

				Mitsubishi Electric Corporation Mitsubishi Electric Semiconductor Mitsubishi Electric, Corp.
Part No.	MGF4714CP 4714CP
OCR Text	...AXIMUM RATINGS (Ta=25C) Symbol vgdo VGSO ID PT Tch Tstg Parameter Gate to drain voltage Gate to source voltage Drain current Total power dissipation Channel temperature Storage temperature Ratings -4 -4 60 50 125 -65 to +125 Unit V V mA mW...
Description	From old datasheet system PLASTIC MOLD PACKAGED LOW NOISE InGaAs HEMT 塑料模具包装低噪音铟镓砷迁移率晶体管
File Size	16.89K / 3 Page	View it Online	Download Datasheet

				NEC[NEC]
Part No.	2SK1109
OCR Text	...in this document. Note VDSX vgdo ID IG PT Tj Tstg 20 -20 10 10 80 125 -55 to +125 V V mA mA mW C C EQUIVALENT CIRCUIT Drain Gate Source The information in this document is subject to change without notice. Before us...
Description	N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR FOR IMPEDANCE CONVERTER OF ECM
File Size	43.45K / 8 Page	View it Online	Download Datasheet

				EUDYNA[Eudyna Devices Inc]
Part No.	EGN030MK
OCR Text	... e Condition RG=15 RG=15 Vp vgdo P3dB d GL Rth a in Rating Limit 50 <6.1 >-2.2 200 120 -5 56.25 -65 to +175 250 y r Unit V V W oC oC Unit V mA mA oC ELECTRICAL CHARACTERISTICS (Case Temperature Tc=25oC) Item Symbol C...
Description	High Voltage - High Power GaN-HEMT
File Size	188.40K / 3 Page	View it Online	Download Datasheet

				EUDYNA[Eudyna Devices Inc]
Part No.	EGN045MK
OCR Text	... e Condition RG=10 RG=10 Vp vgdo P3dB d GL Rth a in Rating Limit 50 <9.7 >-3.6 200 120 -5 75.0 -65 to +175 250 y r Unit V V W oC oC Unit V mA mA oC ELECTRICAL CHARACTERISTICS (Case Temperature Tc=25oC) Item Symbol Co...
Description	High Voltage - High Power GaN-HEMT
File Size	205.87K / 3 Page	View it Online	Download Datasheet

				EUDYNA[Eudyna Devices Inc]
Part No.	EGN21A045I EGN21A045IV
OCR Text	...fficiency Thermal Resistance Vp vgdo IM3 Gp d Rth VDS=50V IDS=18mA IGS=- 9.0 mA VDS=50V IDS(DC)=250mA Pout=39dBm(Avg.) Note 1 Channel to Case -1.0 15.0 - r P Symbol VDS IGF IGR Tch im l e Condition RG=10 RG=10 120 Tc=25oC -...
Description	High Voltage - High Power GaN-HEMT
File Size	226.74K / 4 Page	View it Online	Download Datasheet

				Mitsubishi Electric Corporation MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No.	MGFK39V4045 K394045
OCR Text	...AXIMUM RATINGS (Ta=25C) Symbol vgdo VGSO ID IGR IGF PT Tch Parameter Gate to drain voltage Gate to source voltage Drain current Reverse gate current Forward gate current Total power dissipation Channel temperature *1 Ratings -15 -15 6.0 -1...
Description	14.0~14.5GHz BAND 8W INTERNALLY MATCHD GaAs FET From old datasheet system 14.0-14.5GHz BAND 8W INTERNALLY MATCHD GaAs FET
File Size	19.06K / 1 Page	View it Online	Download Datasheet

				NXP Semiconductors N.V. Philips Semiconductors / NXP Semiconductors
Part No.	J111 J113 J112 J112AMO
OCR Text	...ot Tstg Tj max. max. VDS -VGSO -vgdo IG max. max. max. max. J111; J112; J113 40 V 40 V 40 V 50 mA 400 mW -65 to + 150 C 150 C 250 K/W J112 1 1 5 40 1 5 50 J113 1 1 2 40 0.5 3 100 nA nA mA V V V July 1993 3 Philips S...
Description	N-channel FET N-channel silicon field-effect transistor
File Size	28.14K / 6 Page	View it Online	Download Datasheet

				NXP Semiconductors / Philips Semiconductors
Part No.	J174 J177 J176 J174126
OCR Text	...tot Tstg Tj max. max. VDS VGSO vgdo -IG max. max. max. max. J174; J175; J176; J177 30 30 30 50 400 -65 to +150 150 V V V mA mW C C 250 K/W J176 J177 1 1 2 35 30 1 4 250 1 nA 1 nA 1.5 mA 20 mA 30 V 0.8 V 2.25 V 300 Apr...
Description	P-channel silicon field-effect transistors
File Size	27.42K / 6 Page	View it Online	Download Datasheet

				Mitsubishi
Part No.	MGFS45V2527 S452527
OCR Text	...AXIMUM RATINGS (Ta=25C) Symbol vgdo VGSO ID IGR IGF PT Tch Parameter Gate to drain voltage Gate to source voltage Drain current Reverse gate current Forward gate current Total power dissipation Channel temperature *1 < Keep safety firs...
Description	2.5~2.7GHz BAND 30W INTERNALLY MATCHD GaAs FET From old datasheet system
File Size	27.03K / 2 Page	View it Online	Download Datasheet

For vgdo Found Datasheets File :: 363 Search Time::2.875ms
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