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wr-12 Datasheet PDF File

For wr-12 Found Datasheets File :: 10333 Search Time::3.594ms
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				ETC
Part No.	M5M29GB640C3BTC-12 M5M29GB640C3BTC-90 M5M29GB640C3BTI-12 M5M29GB640C3BTI-90 M5M29GB640C3BXAC-12 M5M29GB640C3BXAC-90 M5M29GB640C3BXAI-12 M5M29GB640C3TTC-90 M5M29GB640C3TXAC-12 M5M29GB640C3TXAC-90 M5M29GB640C3BXAI-90 M5M29GB640C3TTC-12 M5M29GB640C3TTI-12 M5M29GB640C3TTI-90 M5M29GB640C3TXAI-12 M5M29GB640C3TXAI-90 M5M29GB640VP
OCR Text	... write to CUI and array sector. WR=VIL becomes active. The data and address is latched WE on the rising edge of the second WE pulse. DQ0-...12 Main Sector 13 Main Sector 14 Main Sector 15 Main Sector 16 Main Sector 17 Main Sector 18 Main Se...
Description	3.3V ONLY FLASHMEMORY
File Size	605.30K / 42 Page	View it Online	Download Datasheet

				Samsung Electronic SAMSUNG[Samsung semiconductor] Samsung Semiconductor Co., Ltd.
Part No.	KM68257C-12 KM68257CJ-12 KM68257CJ-20 KM68257CL-12 KM68257CL-15 KM68257CL-20 KM68257CLJ-12 KM68257CLJ-15 KM68257CLP-20 KM68257CLTG-12 KM68257CLTG-15 KM68257CLTG-20 KM68257CP-15 KM68257CTG-15 KM68257CTG-20 KM68257C-15 KM68257C-20 KM68257CLP-15 KM68257CP-20 KM68257CTG-12 KM68257CJ-15 KM68257CLJ-20 KM68257CLP-12 KM68257CP-12 KM68257C SAMSUNGSEMICONDUCTORCO.LTD.-KM68257CL-12
OCR Text	... write to the address change. t WR applied in case a write ends as CS or WE going high. 6. If OE, CS and WE are in the Read Mode during this...12 0.3350.005 7.62 0.300 6.860.25 0.2700.010 0.20 +0.10 -0.05 0.008+0.004 -0.002 #1 ...
Description	32Kx8 bit high speed static RAM (5V operating), 20ns 32Kx8 bit high speed static RAM (5V operating), 15ns 32Kx8 bit high speed static RAM (5V operating), 12ns 32Kx8 Bit High Speed Static RAM(5V Operating(, Evolutionary Pin out. Operated at Commercial Temperature Range. 32Kx8位高速静态RAM5V的工作（，进化引脚了。在商业温度范围工作
File Size	190.63K / 10 Page	View it Online	Download Datasheet

				Renesas Electronics Corporation
Part No.	FS10SM-12
OCR Text	...5MIN. 4.4 0.6 2.8 4 wr q GATE w DRAIN e SOURCE r DRAIN e q VDSS .............................................................12 HIGH-SPEED SWITCHING USE ELECTRICAL CHARACTERISTICS Symbol V (BR) DSS V (BR) GSS IGSS IDSS V...
Description	MITSUBISHI Nch POWER MOSFET
File Size	80.61K / 5 Page	View it Online	Download Datasheet

				POWEREX[Powerex Power Semiconductors]
Part No.	CT30SM-12
OCR Text	....45 w e 5.45 0.6 2.8 4 wr q GATE w COLLECTOR e EMITTER r COLLECTOR e VCES .........................................................12 GENERAL INVERTER * UPS USE ELECTRICAL CHARACTERISTICS Symbol V (BR) CES IGES ICES VGE(th) VCE(...
Description	GENERAL INVERTER . UPS USE
File Size	39.65K / 3 Page	View it Online	Download Datasheet

				Mitsubishi Electric, Corp. MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No.	FK10SM-12
OCR Text	...5MIN. 4.4 0.6 2.8 4 wr q GATE w DRAIN e SOURCE r DRAIN e VDSS ..................................................................12 HIGH-SPEED SWITCHING USE ELECTRICAL CHARACTERISTICS Symbol V (BR) DSS V (BR) GSS IGSS IDSS V...
Description	20 Characters x 2 Lines, 5x7 Dot Matrix Character and Cursor 高速开关使 HIGH-SPEED SWITCHING USE
File Size	52.47K / 5 Page	View it Online	Download Datasheet

				Powerex, Inc. POWEREX[Powerex Power Semiconductors] Mitsubishi Electric Corporation
Part No.	FS14SM-12
OCR Text	....45 w e 5.45 0.6 2.8 4 wr q GATE w DRAIN e SOURCE r DRAIN e q VDSS .............................................................12 HIGH-SPEED SWITCHING USE ELECTRICAL CHARACTERISTICS Symbol V (BR) DSS V (BR) GSS IGSS IDSS V...
Description	Nch POWER MOSFET HIGH-SPEED SWITCHING USE 14 A, 600 V, 0.6 ohm, N-CHANNEL, Si, POWER, MOSFET MITSUBISHI Nch POWER MOSFET HIGH-SPEED SWITCHING USE
File Size	48.55K / 4 Page	View it Online	Download Datasheet

				Mitsubishi Electric, Corp. MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No.	FS14SM-12
OCR Text	....45 w e 5.45 0.6 2.8 4 wr q GATE w DRAIN e SOURCE r DRAIN e q VDSS .............................................................12 HIGH-SPEED SWITCHING USE ELECTRICAL CHARACTERISTICS Symbol V (BR) DSS V (BR) GSS IGSS IDSS V...
Description	HIGH-SPEED SWITCHING USE 高速开关使
File Size	43.41K / 4 Page	View it Online	Download Datasheet

				Renesas Electronics Corporation
Part No.	FS14SM-12
OCR Text	....45 w e 5.45 0.6 2.8 4 wr q GATE w DRAIN e SOURCE r DRAIN e q VDSS .............................................................12 HIGH-SPEED SWITCHING USE ELECTRICAL CHARACTERISTICS Symbol V (BR) DSS V (BR) GSS IGSS IDSS V...
Description	MITSUBISHI Nch POWER MOSFET
File Size	80.68K / 5 Page	View it Online	Download Datasheet

				Rohm Co., Ltd. Renesas Electronics Corporation
Part No.	CT30SM-12 CT30SM-1
OCR Text	....45 w e 5.45 0.6 2.8 4 wr q GATE w COLLECTOR e EMITTER r COLLECTOR e VCES .........................................................12 GENERAL INVERTER * UPS USE ELECTRICAL CHARACTERISTICS Symbol V (BR) CES IGES ICES VGE(th) VCE(...
Description	CT30SM-1 Datasheet 63K/MAR.20.03 CT30SM - 1数据63K/MAR.20.03 MITSUBISHI INSULATED GATE BIPOLAR TRANSISTOR GENERAL INVERTER - UPS USE
File Size	60.59K / 4 Page	View it Online	Download Datasheet

				Renesas Electronics Corporation
Part No.	FS7SM-12
OCR Text	...5MIN. 4.4 0.6 2.8 4 wr q GATE w DRAIN e SOURCE r DRAIN e q VDSS .............................................................12 HIGH-SPEED SWITCHING USE ELECTRICAL CHARACTERISTICS Symbol V (BR) DSS V (BR) GSS IGSS IDSS V...
Description	MITSUBISHI Nch POWER MOSFET
File Size	81.26K / 5 Page	View it Online	Download Datasheet

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