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  .5vi Datasheet PDF File

For .5vi Found Datasheets File :: 81    Search Time::2.813ms    
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    ISOCOM
Part No. ISTS400
OCR Text ...f = 50ma reverse voltage (v r )5vi r = 1 m a reverse current (i r ) 100 m av r = 6v output collector-emitter breakdown (bv ceo )30 v i c = 1ma ( note 1 ) emitter-collector breakdown (bv eco ) 6 v i e = 100 m a collector-emitter dark c...
Description (ISTS300 / ISTS400) 1mm APERTURE OPTO-ELECTRONIC SINGLE CHANNEL SLOTTED INTERRUPTER SWITCHES

File Size 64.95K  /  3 Page

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    Agilent (Hewlett-Packard)
Part No. AEDS-9621P10 AEDS-9620 AEDS-9621
OCR Text ... f < 1.8 v reverse voltage v r 5vi r = 100 m a detectors corresponds to a dark period on the adjacent pair of detectors. the photodiode outputs are fed through the signal processing circuitry. two comparators receive these signals and pr...
Description AEDS-9621#210 · Ultra-small Optical Encoder Modules
AEDS-9620#210 · Ultra-small Optical Encoder Modules

File Size 224.54K  /  10 Page

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    R5205CND

Rohm
Part No. R5205CND
OCR Text .... unit forward voltage v sd --1.5vi s =5a, v gs =0v *pulsed parameter conditions conditions ? parameter static drain-source on-state resistance r ds (on) i d =2.5a, v gs =10v -1.31.6 * * * * * * * * * * 3/5 www.rohm.com c ...
Description 10V Drive Nch MOSFET

File Size 195.61K  /  6 Page

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    Leshan Radio Company, Ltd.
Part No. 2SC4934E
OCR Text ...ase breakdown voltage v (br)ebo 5vi e = 10 a, i c = 0 collector cutoff current i cbo 10av cb = 80 v, i e = 0 dc current transfer ratio 2sc4934d h fe 250 500 v ce = 5 v, i c = 10 ma 2sc4934e h fe 400 800 base to emitter voltage v be ...
Description TRANSISTOR | BJT | NPN | 120V V(BR)CEO | 200MA I(C) | TO-126 晶体管|晶体管| npn型| 120伏特五(巴西)总裁| 200mA的一(c)|26

File Size 17.40K  /  4 Page

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    Hitachi,Ltd.
Part No. 2SC4046D 2SC4046E
OCR Text ...ase breakdown voltage v (br)ebo 5vi e = 10 a, i c = 0 collector cutoff current i cbo 10av cb = 80 v, i e = 0 dc current transfer ratio h fe * 1 250 800 v ce = 5 v, i c = 10 ma base to emitter voltage v be 1.0 v collector to emitter...
Description SC70/&#181;DFN, Single/Dual Low-Voltage, Low-Power &#181;P Reset Circuits 晶体管|晶体管| npn型| 120伏特五(巴西)总裁| 200mA的一(c)|26
TRANSISTOR | BJT | NPN | 120V V(BR)CEO | 200MA I(C) | TO-126 晶体管|晶体管| npn型| 120伏特五(巴西)总裁| 200mA的一(c)|26

File Size 26.02K  /  5 Page

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    HSD882S06

Hi-Sincerity Mocroelectronics
Part No. HSD882S06
OCR Text ...v eb =3v, i c =0 *v ce(sat) --0.5vi c =2a, i b =200ma *v be(sat) --2vi c =2a, i b =200ma *h fe1 30 - - v ce =2v, i c =20ma *h fe2 160 - 500 v ce =2v, i c =1a f t -90-mhzv ce =5v, i c =0.1a, f=100mhz cob - 45 - pf v cb =10v, f=1mhz, i e =0 *...
Description The HSD882S is suited for the output stage of 0.75W audio, voltage regulator, and relay driver.

File Size 55.38K  /  5 Page

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    C5252

Hitachi Semiconductor
Part No. C5252
OCR Text ...er saturation voltage v ce(sat) 5vi c = 10 a, i b = 3 a base to emitter saturation voltage v be(sat) 1.5 v i c = 10 a, ib = 3 a fall time t f 0.15 0.3 sec i cp = 7 a, i b1 = 2 a, f h = 31.5 khz 2sc5252 3 80 60 40 20 0 collector...
Description Search --To 2SC5252

File Size 67.12K  /  7 Page

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    RT1P150S RT1P150U RT1P150X RT1P150M RT1P150C

Isahaya Electronics Corporation
Part No. RT1P150S RT1P150U RT1P150X RT1P150M RT1P150C
OCR Text ...dc forward current gain v ce =-5vi c =-1ma 100 c to e saturation voltage i c =-1mai b =-0.1ma -0.3 v input resistance 100 k gain band width product v ce =-6vi e =10ma 150 mhz ...
Description Transistor With Resistor For Switching Application Silicon NPN Epitaxial Type

File Size 111.51K  /  3 Page

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For .5vi Found Datasheets File :: 81    Search Time::2.813ms    
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