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  1.5-18ghz Datasheet PDF File

For 1.5-18ghz Found Datasheets File :: 382    Search Time::2.422ms    
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    United Monolithic Semiconductors GmbH
UMS[United Monolithic Semiconductors]
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Part No. CHX2089 CHX2089-99F_00 CHX2089-99F/00
OCR Text ...Vd=3.5Volt@Id=60mA Chip size : 1.62 x 0.89 x 0.10 mm 16 12 8 4 0 -4 -8 -12 -16 -20 8 9 10 11 Input Freq ( GHz ) 12 13 P_out_H 1 P_out_H ...5 23 15 Unit GHz GHz dBm dBm 11 15 ESD Protection : Electrostatic discharge sensitive d...
Description Circular Connector; MIL SPEC:MIL-DTL-38999 Series III; Body Material:Metal; Series:TV07; Number of Contacts:22; Connector Shell Size:13; Connecting Termination:Crimp; Circular Shell Style:Jam Nut Receptacle; Body Style:Straight 9 - 18GHz频率倍频
9-18GHz Frequency Multiplier

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    United Monolithic Semiconductors GmbH
UMS[United Monolithic Semiconductors]
Part No. CHA2291-99F_00 CHA2291 CHA2291-99F/00
OCR Text ...: 180mA @ 5V Chip size : 2.49 X 1.23 X 0.10 mm Gain (dB) NF (dB) 11 12 13 14 Frequency (GHz) 15 16 17 18 M...5:1 5 [-0.7, +1.2] 25 180 -1.5 +1.3 V V mA mA Id1 Id Bias current (2) with Vc=1.2V Bi...
Description 10-18GHz Low Noise, Variable Gain Amplifier 10 - 18GHz低噪声,可变增益放大

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    UMS[United Monolithic Semiconductors]
Part No. CHA2292-99F_00 CHA2292 CHA2292-99F/00
OCR Text ...: 160mA @ 5V Chip size : 2.32 X 1.23 X 0.10 mm 30 28 26 24 22 20 18 16 14 12 10 8 6 4 2 0 Gain (dB) NF (dB) 16 17 18 19...5:1 5 [-0.7, +1.2] 35 160 -1.5 +1.3 V V mA mA Id1 Id Bias current (2) with Vc=1.2V Bi...
Description KJA 79C 79#22D PIN PLUG
17-24GHz Low Noise, Variable Gain Amplifier

File Size 135.23K  /  6 Page

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    UMS[United Monolithic Semiconductors]
Part No. CHA5293A-99F_00 CHA5293A CHA5293A-99F/00
OCR Text ...Ref. : DSCHA52932123 -03-May-02 1/7 Specifications subject to change without notice United Monolithic Semiconductors S.A.S. Route Depart...5 to +0.4 -5 to +5 -8 15 175 -40 to +80 -55 to +125 Unit V mA V mA V dBm C C C (1) Operation ...
Description 17-24GHz High Power Amplifier

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    MIMIX[Mimix Broadband]
Part No. CMM0618-BD
OCR Text ...DVANCED PRODUCT SPECIFICATIONS (1) PRODUCT DESCRIPTION: 6-18GHz 1W MMIC Amplifier PRODUCT APPLICATION: PROJECT ENGINEER: Carlo Poledrelli M...5 700 29.0 30.0 36.0 775 MAX 18.0 2.0 12.5 3.0 850 tbd UNITS GHz dBm dBm dBm dB dB dBm mA C/...
Description 5.0 to 18.0 GHz 1w MMIC Amplifier

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    EFA018A-70

List of Unclassifed Manufacturers
ETC[ETC]
Excelics Semiconductor
Part No. EFA018A-70
OCR Text ...CAL POWER GAIN AT 12GHz TYPICAL 1.1dB NOISE FIGURE AND 10.5dB ASSOCIATED GAIN AT 12GHz 0.3 X 180 MICRON RECESSED "MUSHROOM" GATE Si3N4 PASSI...5 9.0 All Dimensions In mils. TYP 18.5 18.5 10.5 8.0 33 1.1 10.5 MAX UNIT dBm dB % dB dB...
Description Low Distortion GaAs Power FET

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    EFA025A-70

List of Unclassifed Manufacturers
ETC[ETC]
Excelics Semiconductor
Part No. EFA025A-70
OCR Text ...CAL POWER GAIN AT 12GHz TYPICAL 1.5dB NOISE FIGURE AND 10dB ASSOCIATED GAIN AT 12GHz 0.3 X 250 MICRON RECESSED "MUSHROOM" GATE Si3N4 PASSIVA...5 TYP 20 20 10 7 35 1.5 10 65 40 -2 -15 -14 370* MAX UNIT dBm dB % dB dB mA mS V V V o C/W 35 30 ...
Description Low Distortion GaAs Power FET

File Size 31.33K  /  2 Page

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    EFA025AL

Excelics Semiconductor, Inc.
Electronic Theatre Controls, Inc.
ETC[ETC]
List of Unclassifed Manufacturers
Part No. EFA025AL
OCR Text ...s=0V Vds=3V, Vgs=0V Vds=3V, Ids=1.0mA -12 -7 17.0 9.5 Chip Thickness: 75 13 microns All Dimensions In Microns MIN TYP 20.0 20.0 11.5 9.0 38 MAX UNIT dBm dB % 20 30 45 50 -1.5 -15 -14 155 65 mA mS -2.5 V V V...
Description High Gain GaAs Power FET 高增益GaAs功率场效应管

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    EFA040A-70

Electronic Theatre Controls, Inc.
Excelics Semiconductor, Inc.
ETC[ETC]
List of Unclassifed Manufacturers
Part No. EFA040A-70
OCR Text ...s=0V Vds=3V, Vgs=0V Vds=3V, Ids=1.0 mA 160 mA mS -3.5 V V V C/W Drain Breakdown Voltage Igd=1.0mA Source Breakdown Voltage Igs=1.0mA Thermal Resistance * Overall Rth depends on case mounting. MAXIMUM RATINGS AT 25OC SYM...
Description Low Distortion GaAs Power FET 低失真GaAs功率场效应管

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    EFA060B-70

Excelics Semiconductor, Inc.
ETC[ETC]
List of Unclassifed Manufacturers
Part No. EFA060B-70
OCR Text ...s=0V Vds=3V, Vgs=0V Vds=3V, Ids=1.5mA -10 -6 MIN 22.0 6.0 TYP 24.0 24.0 7.5 5.0 33 100 70 170 90 -2.0 -15 -14 175* o MAX UNIT dBm dB % 240 mA mS -3.5 V V V C/W Drain Breakdown Voltage Igd=1.0mA Source Breakdown Voltage...
Description Low Distortion GaAs Power FET
From old datasheet system

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For 1.5-18ghz Found Datasheets File :: 382    Search Time::2.422ms    
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