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  100v 3a Datasheet PDF File

For 100v 3a Found Datasheets File :: 2539    Search Time::1.906ms    
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    IRF630NS IRF630NL IRF630N

FAIRCHILD[Fairchild Semiconductor]
Part No. IRF630NS IRF630NL IRF630N
OCR Text ...iller" Charge (VGS = 10V) VDD = 100v, ID = 5.4A VGS = 10V, RGS = 13 9 12 71 19 32 135 ns ns ns ns ns ns VGS = 0V to 20V VGS = 0V to 10V VDD ...3a 0 -80 -40 0 40 80 120 160 200 TJ, JUNCTION TEMPERATURE (oC) PULSE DURATION = 80s DUTY CYCLE = 0.5...
Description N-Channel Power MOSFETs 200V, 9.3a, 0.30-Ohm
N-Channel Power MOSFETs 200V, 9.3a, 0.30з

File Size 201.04K  /  11 Page

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    SGW02N12006

Infineon Technologies AG
Part No. SGW02N12006
OCR Text ...withstand time 2 v ge = 15v, 100v v cc 1200v, t j 150 c t sc 10 s power dissipation t c = 25 c p tot 50 w opera...3a 4a 5a 6a 7a t c , case temperature t c , case temperature figure 3. power dissipation...
Description Fast IGBT in NPT-technology

File Size 807.37K  /  11 Page

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    RF601B2D11 RF601B2DTL

Rohm
Part No. RF601B2D11 RF601B2DTL
OCR Text ...( ?? 180) dc t d=t/t t vr io vr=100v 0a 0v t tj=150 ? c d=t/t t v r io v r =100v 0a 0v 0 5 10 15 20 25 30 no break at 30kv c=100pf r=1.5k ? c=200pf r=0 ? no break at 30kv electrostatic discharge test esd(kv) esd dispersion map t tj=150 ? c ...
Description Fast recovery diodes

File Size 1,066.83K  /  4 Page

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    FAIRCHILD[Fairchild Semiconductor]
Part No. KSB601Y KSB601 KSB601O KSB601R KSB601OTU KSB601YTSTU KSB601YTU
OCR Text ...= 5V L = 180uH, Clamped VCB = - 100v, IE = 0 VCE = - 100v, RBE = 51 TC= 125C VCE = - 100v, VBE(off) = 1.5V VCE = - 100v, VBE(off) = 1.5V TC = 125C VEB = - 5V, IC = 0 VCE = - 2V, IC = - 3a VCE = - 2V, IC = - 5A IC = - 3a, IB = - 3mA IC = - 3...
Description PNP Epitaxial Silicon Darlington Transistor
PNP Epitaxial Silicon Transistor
Low Frequency Power Amplifier

File Size 47.86K  /  6 Page

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    2SD1791

Inchange Semiconductor Company Limited
Part No. 2SD1791
OCR Text ... Sustaining Voltage: VCEO(SUS)= 100v (Min.) *High Switching Speed APPLICATIONS *Designed for audio frequency power amplifier and low spee...3a; IB= 5mA B 1.5 V VBE(sat) Base-Emitter Saturation Voltage IC= 3a; IB= 5mA B 2...
Description Silicon NPN Darlington Power Transistor

File Size 202.91K  /  2 Page

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    IRHF58230 IRHF57230 IRHF53230 IRHF54230

IRF[International Rectifier]
Part No. IRHF58230 IRHF57230 IRHF53230 IRHF54230
OCR Text ... -20V VGS =12V, ID = 7.3a VDS = 100v VDD = 100v, ID = 7.3a VGS =12V, RG = 7.5 IGSS IGSS Qg Q gs Q gd td(on) tr td(off) tf LS + LD Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Total Gate Charge Gate-to-Source Charge Ga...
Description    RADIATION GARDENED POWER MOSFET THRU-HOLE (TO-39)
200V 1000kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a TO-205AF package

File Size 127.88K  /  8 Page

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    HP127W

SHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD
Part No. HP127W
OCR Text ...llector-Base Voltage------------100v VCEO Collector-Emitter Voltage-----------100v VE B O Emitter -Base Voltage------------5V ICCollect...3a, IB=-12mA IC=-3a, IB=-20mA VCE=-3V, IC=-3a VCE(sat1) *Collector- Emitter Saturation Voltage VC...
Description PNP SILICON TRANSISTOR

File Size 70.09K  /  2 Page

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