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Nell Semiconductor Co., Ltd
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| Part No. |
NST120F120-a
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| OCR Text |
... sum mar y v r v (typical) at 125 oc f 12 00 v 2.0 v 38 ns 53a at 100 o c t (typical) rr i at t per diode f(dc) c absol ute maxim um ra tings p arameter symbol v 53 a 106 350 maximum pow er dissipation 337 w 135 t ... |
| Description |
FRED Ultrafast Soft Recovery Diode, 60a × 2
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| File Size |
320.92K /
6 Page |
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Samtec
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| Part No. |
BDL-125-G-E BDL-1XX-G-a
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| OCR Text |
... separable connection. (3,18) .125 (0,46) .018 dia (1,27) .050 z (1,78) .070 dia (1,27) .050 dia (3,18) .125 (0,46) .018 dia bbs and bhs series bbd series z z style e: (2,74) .108 style f: (3,18) .125 (0,46) .018 dia (0,46) .018... |
| Description |
MaCHINED BOaRD STaCKING STRIPS
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| File Size |
1,051.83K /
1 Page |
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it Online |
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Vishay Intertechnology,Inc.
Vishay Intertechnology, Inc.
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| Part No. |
SUM16N20-125
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| OCR Text |
... synchronous rectifier sum16n20-125 vishay siliconix new product document number: 72076 s-31273?rev. c, 16-jun-03 www.vishay.com 1 n-chan...a) 200 0.125 @ v gs = 10 v 16 200 0.150 @ v gs = 6 v 14.6 d g s n-channel mosfet to-263 s d g top ... |
| Description |
N-Channel 200-V (D-S) 175C MOSFET N沟道200 -五（副）175C MOSFET
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| File Size |
37.30K /
5 Page |
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it Online |
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http://
VISAY[Vishay Siliconix]
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| Part No. |
SUM16N20-125
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| OCR Text |
125
New Product
Vishay Siliconix
N-Channel 200-V (D-S) 175_C MOSFET
FEaTURES PRODUCT SUMMaRY
V(BR)DSS (V)
200
rDS(on) (W)
0.125 @ VGS = 10 V 0.150 @ VGS = 6 V
ID (a)
16 14.6
D D D D
TrenchFETr Power MOSFETS 175_C Jun... |
| Description |
N-Channel 200-V (D-S) 175C MOSFET
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| File Size |
39.53K /
5 Page |
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it Online |
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Duracell
California Eastern Laboratories, Inc.
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| Part No. |
UPa801T-T1-a
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| OCR Text |
....093 41.1 .604 -39.5 0.50 .610 -125.9 3.883 98.5 .098 38.8 .550 -42.0 0.60 .583 -138.6 3.388 90.9 .102 37.4 .613 -44.2 0.70 .560 -150.0 3.04...a = 25 c) frequency s 11 s 21 s 12 s 22 (ghz) mag ang mag ang mag ang mag ang v ce = 3 v, i c = ... |
| Description |
NPN SILICON HIGH FREQUENCY NPN硅高
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| File Size |
174.77K /
8 Page |
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California Eastern Laboratories
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| Part No. |
NE68818-T1-a NE68819-T1-a NE68833-T1-a
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| OCR Text |
... total power dissipation mw 150 125 150 200 200 r th(j-a) thermal resistance (junction to ambient) c/w 833 1000 833 625 625 r th(j-c) thermal resistance(junction to case) c/w electrical characteristics (t a = 25 c) 3. pulsed measuremen... |
| Description |
SURFaCE MOUNT NPN SILICON HIGH FREQUENCY TRaNSISTOR
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| File Size |
352.43K /
20 Page |
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Dynex Semiconductor, Ltd.
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| Part No. |
DFM1200FXM18-a
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| OCR Text |
...ol q pd test conditions t vj = 125?c dc, t case = 75?c, t vj = 125?c t case = 110?c, t p = 1ms v r = 0, t p = 10ms, t vj = 125?c t c...a c mj max. - - - typ. 880 320 240 min. - - - dynamic electrical characteristics - per arm t vj = ... |
| Description |
Fast Recovery Diode Modules - Dual Diode 快恢复二极管模块-双二极管
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| File Size |
114.27K /
7 Page |
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it Online |
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