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MARL INTERNATIONAL LTD
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| Part No. |
511-521-21
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| OCR Text |
...a (mcd) l p (nm) t opr t stg 51 1-501-21 red colour dif fused 12 19 1 1000 643 -40 ~ +95^ -40 ~ +100 y es 51 1-521-21 y ellow colour dif fus...930-21 blue colour dif fused 12 20 7000 470 -40 ~ +95^ -40 ~ +100 y es 51 1-997-21 cool white colour... |
| Description |
T-4 SINGLE COLOR LED, YELLOW, 10 mm
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| File Size |
259.43K /
3 Page |
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it Online |
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FREESCALE[Freescale Semiconductor, Inc]
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| Part No. |
MMG3005NT1
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| OCR Text |
1, 11/2005
Heterojunction Bipolar Transistor Technology (InGaP HBT)
Broadband High Linearity Amplifier
The MMG3005NT1 is a General Purp...930 960
-15 840
870
900 f, FREQUENCY (MHz)
930
960
Figure 6. Small -Signal Gain (S... |
| Description |
Heterojunction Bipolar Transistor Technology (InGaP HBT)
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| File Size |
250.25K /
20 Page |
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it Online |
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FUJITSU COMPONENT LTD
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| Part No. |
FCN-244F070-G/4
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| OCR Text |
1 fujitsu takamisawa connector catalog for board-to-board connection 240 series (low-profile stacking) n features ? the connectors can con...930) 26.13(1.180) 32.48(1.430) 38.83(1.680) 45.18(1.930) 51.53(2.180) 57.88(2.426) 64.23(2.680) 25.9... |
| Description |
70 CONTACT(S), FEMALE, STRAIGHT BOARD STACKING CONNECTOR, SOLDER, SOCKET
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| File Size |
145.71K /
4 Page |
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it Online |
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MOTOROLA[Motorola, Inc]
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| Part No. |
MRF9030LSR1 MRF9030 MRF9030D MRF9030LR1
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| OCR Text |
...ications with frequencies up to 1.0 GHz. The high gain and broadband performance of these devices make them ideal for large - signal, common...930.0 MHz, f2 = 930.1 MHz and f1 = 960.0 MHz, f2 = 960.1 MHz) Two - Tone Drain Efficiency (VDD = 26 ... |
| Description |
The RF Sub-Micron MOSFET Line RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
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| File Size |
537.70K /
12 Page |
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it Online |
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Freescale (Motorola)
FREESCALE[Freescale Semiconductor, Inc]
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| Part No. |
MRF9030MR1 MRF9030MBR1
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| OCR Text |
...ications with frequencies up to 1.0 GHz. The high gain and broadband performance of these devices make them ideal for large-signal, common-s...930.0 MHz, f2 = 930.1 MHz and f1 = 960.0 MHz, f2 = 960.1 MHz) Two-Tone Drain Efficiency (VDD = 26 Vd... |
| Description |
945 MHz, 30 W, 26 V Lateral N–Channel Broadband RF Power MOSFET
The RF Sub-Micron MOSFET Line RF POWER FIELD EFFECT TRANSISTORS N-Channel Enhancement-Mode Lateral MOSFETs
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| File Size |
617.23K /
12 Page |
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it Online |
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ASTEC[Astec America, Inc]
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| Part No. |
DS657-9-3
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| OCR Text |
... 802.3af Compliant Power Source 1 year warranty
Output
Maximum Power Hold Up Time Over Current Protection (OCP) Short Circuit Protection...930-4600 Facsimile: 760-930-0698
EUROPE Astec House, Waterfront Business Park Merry Hill, Dudley ... |
| Description |
657 Watts
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| File Size |
203.12K /
4 Page |
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it Online |
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FREESCALE[Freescale Semiconductor, Inc]
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| Part No. |
MRF9030NBR1 MRF9030MBR1 MRF9030MR1 MRF9030NR1
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| OCR Text |
...tection * Capable of Handling 5:1 VSWR, @ 26 Vdc, 945 MHz, 30 Watts CW Output Power * Excellent Thermal Stability * Characterized with Serie...930.0 MHz, f2 = 930.1 MHz and f1 = 960.0 MHz, f2 = 960.1 MHz) Two-Tone Drain Efficiency (VDD = 26 Vd... |
| Description |
RF Power Field Effect Transistors
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| File Size |
289.34K /
12 Page |
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it Online |
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Price and Availability
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