2-MBIT (128K x 16 256K x 8) BOOT BLOCK FLASH MEMORY FAMILY
28F200BX-T B 28F002BX-T B
Y
x8 x16 Input Output Architecture 28F200BX-T 28F2...097 152-bit nonvolatile memories organized as either 262 144 bytes or 131 072 words of information T...
Description
2-MBIT (128K x 16/ 256K x 8) BOOT BLOCK FLASH MEMORY FAMILY 2-MBIT (128K x 16, 256K x 8) BOOT BLOCK FLASH MEMORY FAMILY
...1999
Am29LV160B
16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
DISTINCTIVE CHARACTERISTICS
s Single...097,152 bytes or 1,048,576 words. The device is offered in 48-ball FBGA, 44-pin SO, and 48-pin TSOP ...
Description
16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
.../133 compliant * Organization - 2,097,152 words x 8 bits x 4 banks (8Mx8) - 1,048,576 words x 16 bits x 4 banks (4Mx16) * Fully synchronous - All signals referenced to positive edge of clock * Four internal banks controlled by BA0/BA1 (bank...
2 mm) CBGA Package * 2.7V to 3.3V Operating Voltage
Flash
* 2.7V to 3.3V Read/Write * Access Time - 70 ns * Sector Erase Architecture * ...097,152 words of 16 bits each. The memory is divided into 71 sectors for erase operations. The devic...
Description
32 Mbit Single-plane Flash combined with a 8M bit SRAM 32 Mbit Single-plane Flash combined with a 4M bit SRAM 32-megabit Flash 4-megabit/ 8-megabit SRAM Stack Memory
2 May. 2003
* Samsung Electronics reserves the right to change products or specification without notice.
Rev. 1.2 May. 2003
SDRAM 1...097,152 words by 16 bits, fabricated with SAMSUNGs high performance CMOS technology. Synchronous des...
2 November. 2003
* Samsung Electronics reserves the right to change products or specification without notice.
Rev. 0.2 November. 2003
...097,152 words by 16 bits, fabricated with SAMSUNGs high performance CMOS technology. Synchronous des...
...ess key programs - CAS latency (2 & 3) - Burst length (1, 2, 4, 8 & Full page) - Burst type (Sequential & Interleave) * All inputs are sampl...097,152 words by 16 bits, fabricated with SAMSUNGs high performance CMOS technology. Synchronous des...
Description
128Mb SDRAM, 3.3V, LVTTL, 100MHz 2M x 16Bit x 4 Banks Synchronous DRAM in sTSOP 200万16 × 4银行同步DRAM在sTSOP
...ss key programs -. CAS latency (2 & 3) -. Burst length (1, 2, 4, 8 & Full page) -. Burst type (Sequential & Interleave) All inputs are sampl...097,152 words by 16 bits, fabricated with SAMSUNGs high performance CMOS technology. Synchronous des...
Description
128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL 128Mbit SDRAM00万16 × 4银行同步DRAM LVTTL
...OH of K4S280432C-TC75/TL75 from 2.7ns to 3.0ns. * Deleted -10 and -80 speed specification.
CMOS SDRAM
Rev. 0.0 Mar. 2000
K4S281632C...097,152 words by 16 bits, fabricated with SAMSUNGs high performance CMOS technology. Synchronous des...
Description
8M X 16 SYNCHRONOUS DRAM, 5.4 ns, PDSO54 128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL 128Mbit SDRAM00万16 × 4银行同步DRAM LVTTL