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				INTEL[Intel Corporation]
Part No.	PA28F200BX-B120 PA28F200BX-B60 PA28F200BX-B80 PA28F200BX-T120 PA28F200BX-T60 PA28F200BX-T80 TB28F200BX TB28F200BX-B80 TB28F200BX-T80 TE28F200BX-B80 TE28F200BX-T80 TE28F002BX-B80 TE28F002BX-T80 E28F200BX-T60 28F200BX 28F200BX-TB E28F002BX-B120 E28F002BX-B60 E28F002BX-B80 E28F002BX-T120 E28F002BX-T60 E28F002BX-T80 E28F200BX-B120 E28F200BX-B60 E28F200BX-B80 E28F200BX-T120 E28F200BX-T80
OCR Text	2-MBIT (128K x 16 256K x 8) BOOT BLOCK FLASH MEMORY FAMILY 28F200BX-T B 28F002BX-T B Y x8 x16 Input Output Architecture 28F200BX-T 28F2...097 152-bit nonvolatile memories organized as either 262 144 bytes or 131 072 words of information T...
Description	2-MBIT (128K x 16/ 256K x 8) BOOT BLOCK FLASH MEMORY FAMILY 2-MBIT (128K x 16, 256K x 8) BOOT BLOCK FLASH MEMORY FAMILY
File Size	552.17K / 48 Page	View it Online	Download Datasheet

				AMD[Advanced Micro Devices]
Part No.	AM29LV160BT120EC AM29LV160BT120ECB AM29LV160BT120EE AM29LV160BT120EEB AM29LV160BT120EI AM29LV160BT120EIB AM29LV160BT120FC AM29LV160BT120FCB AM29LV160BT120FE AM29LV160BT120FEB AM29LV160BT120FI AM29LV160BT120FIB AM29LV160BT120SC AM29LV160BT120SCB AM29LV160BT120SE AM29LV160BT120SEB AM29LV160BT120SI AM29LV160BT120SIB AM29LV160BT120WCC AM29LV160BT120WCCB AM29LV160BT120WCE AM29LV160BT120WCEB AM29LV160BT120WCI AM29LV160BT120WCIB AM29LV160BT90FC AM29LV160BT90FCB AM29LV160BT90FE AM29LV160BT90FEB AM29LV160BT90FI AM29LV160BT90FIB AM29LV160BT70REC AM29LV160BT70RECB AM29LV160BT70REE AM29LV160BT70REEB AM29LV160BT70REI AM29LV160BT70REIB AM29LV160BT70RFC AM29LV160BT70RFCB AM29LV160BT70RFE AM29LV160BT70RFEB AM29LV160BT70RFI AM29LV160BT70RFIB AM29LV160BT70RSC AM29LV160BT70RSCB AM29LV160BT70RSE AM29LV160BT70RSEB AM29LV160BT70RSI AM29LV160BT70RSIB AM29LV160BT70RWCC AM29LV160BT70RWCCB AM29LV160BT70RWCE AM29LV160BT70RWCEB AM29LV160BT70RWCI AM29LV160BT70RWCIB AM29LV160BB120EC AM29LV160BB120ECB AM29LV160BB120EE AM29LV160BB120EEB AM29LV160BB120EI AM29LV160BB120EIB AM29LV160BB120FC AM29LV160BB120FCB AM29LV160BB120FE AM29LV160BB120FEB AM29LV160BB120FI AM29LV160BB120FIB AM29LV160BB120SC AM29LV160BB120SCB AM29
OCR Text	...1999 Am29LV160B 16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory DISTINCTIVE CHARACTERISTICS s Single...097,152 bytes or 1,048,576 words. The device is offered in 48-ball FBGA, 44-pin SO, and 48-pin TSOP ...
Description	16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
File Size	355.15K / 48 Page	View it Online	Download Datasheet

				ALSC[Alliance Semiconductor Corporation] ETC
Part No.	AS4LC4M16S0 AS4LC4M16S0-10FTC AS4LC4M16S0-10TC AS4LC4M16S0-75TC AS4LC4M16S0-8TC AS4LC8M8S0 AS4LC8M8S0-10FTC AS4LC8M8S0-10TC AS4LC8M8S0-75TC AS4LC8M8S0-8TC
OCR Text	.../133 compliant * Organization - 2,097,152 words x 8 bits x 4 banks (8Mx8) - 1,048,576 words x 16 bits x 4 banks (4Mx16) * Fully synchronous - All signals referenced to positive edge of clock * Four internal banks controlled by BA0/BA1 (bank...
Description	3.3V 4Mx16 and 8Mx8 CMOS synchronous DRAM
File Size	387.58K / 24 Page	View it Online	Download Datasheet

				ATMEL[ATMEL Corporation]
Part No.	AT52BR3224AT AT52BR3224AT-70CI AT52BR3228AT-70CI AT52BR3224A AT52BR3224A-70CI AT52BR3228A AT52BR3228A-70CI AT52BR3228AT
OCR Text	2 mm) CBGA Package * 2.7V to 3.3V Operating Voltage Flash * 2.7V to 3.3V Read/Write * Access Time - 70 ns * Sector Erase Architecture * ...097,152 words of 16 bits each. The memory is divided into 71 sectors for erase operations. The devic...
Description	32 Mbit Single-plane Flash combined with a 8M bit SRAM 32 Mbit Single-plane Flash combined with a 4M bit SRAM 32-megabit Flash 4-megabit/ 8-megabit SRAM Stack Memory
File Size	350.23K / 46 Page	View it Online	Download Datasheet

				Agilent (Hewlett-Packard) HP[Agilent(Hewlett-Packard)]
Part No.	ATF-45101
OCR Text	2 - 8 GHz Medium Power Gallium Arsenide FET Technical Data ATF-45101 Features * High Output Power: 29.0 dBm Typical P 1 dB at 4 GHz * H...097 .121 .161 S22 Ang. 43 18 7 3 -2 -8 -15 -20 -31 -40 -45 -55 -63 -79 Mag. .31 .33 .39 .46 .50 .52 ...
Description	2-8 GHz Medium Power Gallium Arsenide FET
File Size	40.00K / 3 Page	View it Online	Download Datasheet

				Samsung Electronic Samsung semiconductor
Part No.	K4S280832E-TC75 K4S280832E-TL75 K4S281632E-TC60 K4S281632E-TC75 K4S281632E-TL60 K4S281632E-TL75 K4S281632F-TC60 K4S281632F-TC75 K4S281632F-TL60 K4S281632F-TL75 K4S280432E-TC75 K4S280432E-TL75
OCR Text	2 May. 2003 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 1.2 May. 2003 SDRAM 1...097,152 words by 16 bits, fabricated with SAMSUNGs high performance CMOS technology. Synchronous des...
Description	128Mb F-die SDRAM Specification 128Mb E-die SDRAM Specification
File Size	142.11K / 14 Page	View it Online	Download Datasheet

				Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor] Samsung Electronic
Part No.	K4S280832F-TC75 K4S280832F-TL75 K4S281632F-TC60 K4S281632F-TC75 K4S281632F-TL60 K4S281632F-TL75 TL431CDT K4S280432F-TCL75 K4S280832F-TCL75 K4S280432F-TC75 K4S281632F-TCL60 K4S281632F-TCL75 K4S280432F-TL75
OCR Text	2 November. 2003 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 0.2 November. 2003 ...097,152 words by 16 bits, fabricated with SAMSUNGs high performance CMOS technology. Synchronous des...
Description	128Mb F-die SDRAM Specification 128Mb的的F - SDRAM内存芯片规格
File Size	143.50K / 14 Page	View it Online	Download Datasheet

				Samsung Electronic SAMSUNG[Samsung semiconductor] SAMSUNG SEMICONDUCTOR CO. LTD. Samsung Semiconductor Co., Ltd.
Part No.	K4S281632B-N K4S281632B-NC_L1H K4S281632B-NC_L1L K4S281632B-NC/L1H K4S281632B-NC/L1L K4S281632B-NC1H K4S281632B-NC1L K4S281632B-NL1H
OCR Text	...ess key programs - CAS latency (2 & 3) - Burst length (1, 2, 4, 8 & Full page) - Burst type (Sequential & Interleave) * All inputs are sampl...097,152 words by 16 bits, fabricated with SAMSUNGs high performance CMOS technology. Synchronous des...
Description	128Mb SDRAM, 3.3V, LVTTL, 100MHz 2M x 16Bit x 4 Banks Synchronous DRAM in sTSOP 200万16 × 4银行同步DRAM在sTSOP
File Size	62.82K / 8 Page	View it Online	Download Datasheet

				Samsung Electronic SAMSUNG[Samsung semiconductor] SAMSUNG SEMICONDUCTOR CO. LTD. Samsung Semiconductor Co., Ltd.
Part No.	K4S281632B K4S281632B-TC10 K4S281632B-TC1H K4S281632B-TC1L K4S281632B-TC75 K4S281632B-TC80 K4S281632B-TL10 K4S281632B-TL1H K4S281632B-TL1L K4S281632B-TL75 K4S281632B-TL80
OCR Text	...ss key programs -. CAS latency (2 & 3) -. Burst length (1, 2, 4, 8 & Full page) -. Burst type (Sequential & Interleave) All inputs are sampl...097,152 words by 16 bits, fabricated with SAMSUNGs high performance CMOS technology. Synchronous des...
Description	128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL 128Mbit SDRAM00万16 × 4银行同步DRAM LVTTL
File Size	107.58K / 10 Page	View it Online	Download Datasheet

				Samsung Electronic SAMSUNG[Samsung semiconductor] SAMSUNG SEMICONDUCTOR CO. LTD. Samsung Semiconductor Co., Ltd.
Part No.	K4S281632C-TC1H K4S281632C-TC1L K4S281632C-TC75 K4S281632C-TL1H K4S281632C-TL1L K4S281632C-TL75 K4S281632C-TP75 K4S281632C K4S281632C-TI K4S281632C-TI1H K4S281632C-TI1L K4S281632C-TI75 K4S281632C-TP K4S281632C-TP1H K4S281632C-TP1L K4S281632C-TL750
OCR Text	...OH of K4S280432C-TC75/TL75 from 2.7ns to 3.0ns. * Deleted -10 and -80 speed specification. CMOS SDRAM Rev. 0.0 Mar. 2000 K4S281632C...097,152 words by 16 bits, fabricated with SAMSUNGs high performance CMOS technology. Synchronous des...
Description	8M X 16 SYNCHRONOUS DRAM, 5.4 ns, PDSO54 128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL 128Mbit SDRAM00万16 × 4银行同步DRAM LVTTL
File Size	111.68K / 11 Page	View it Online	Download Datasheet

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