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ADPOW[Advanced Power Technology]
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| Part No. |
APT10M30AVR
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| OCR Text |
...ORWARD VOLTAGE
1
TO-3 (TO-204ae) Package Outline
Seating Plane
3.84 (.151) 4.09 (.161) (2-Places)
Gate
Source
16.64 (.655) 17.15 (.675) 38.61 (1.52) 39.12 (1.54)
22.23 (.875) Max.
1.47 (.058) 1.60 (.063) (2-Places)
D... |
| Description |
POWER MOS V 100V 65A 0.030 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
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| File Size |
66.38K /
4 Page |
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it Online |
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ADPOW[Advanced Power Technology]
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| Part No. |
APT30M90AVR
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| OCR Text |
...RWARD VOLTAGE
.1
TO-3 (TO-204ae) Package Outline
Seating Plane
3.84 (.151) 4.09 (.161) (2-Places)
Gate
Source
16.64 (.655) 17.15 (.675) 38.61 (1.52) 39.12 (1.54)
22.23 (.875) Max.
1.47 (.058) 1.60 (.063) (2-Places)
D... |
| Description |
POWER MOS V 300V 33A 0.090 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
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| File Size |
64.32K /
4 Page |
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it Online |
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ADPOW[Advanced Power Technology]
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| Part No. |
APT4015AVR
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| OCR Text |
...ORWARD VOLTAGE
1
TO-3 (TO-204ae) Package Outline
Seating Plane
3.84 (.151) 4.09 (.161) (2-Places)
Gate
Source
16.64 (.655) 17.15 (.675) 38.61 (1.52) 39.12 (1.54)
22.23 (.875) Max.
1.47 (.058) 1.60 (.063) (2-Places)
D... |
| Description |
POWER MOS V 400V 25.5A 0.150 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
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| File Size |
63.92K /
4 Page |
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it Online |
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Motorola Inc
Motorola, Inc.
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| Part No. |
BUT34
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| OCR Text |
...TTS
BUT34
CASE 197A-05 TO-204ae (TO-3)
Order this document by BUT34/D
Watts
W/_C
_C/W
Unit
Unit
Adc
Adc
Adc
Vdc
Vdc
Vdc
_C
_C
1
IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII I II I I I I IIII... |
| Description |
50 AMPERES NPN SILICON POWER DARLINGTON TRANSISTOR 850 VOLTS 250 WATTS
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| File Size |
287.21K /
8 Page |
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it Online |
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ON Semi
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| Part No. |
2N6379 ON0089
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| OCR Text |
...e
2N6379*
CASE 197A-05 TO-204ae (TO-3)
Order this document by 2N6379/D
Watts W/_C
_C/W
Unit
Unit
Adc
Adc
Vdc
Vdc
Vdc
_C
1
IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII I II I I I I I IIIIIIIIIIIIIIIIII... |
| Description |
80, 100, 120 VOLTS 250 WATTS
From old datasheet system
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| File Size |
171.11K /
6 Page |
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it Online |
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IXYS[IXYS Corporation]
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| Part No. |
IXTH50N20 IXTM50N20
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| OCR Text |
...0 .216 S 6.15 BSC 242 BSC
TO-204ae (IXTM) Outline V ns
IF = IS, VGS = 0 V, Pulse test, t 300 s, duty cycle d 2 % IF = IS, -di/dt = 100 A/s, VR = 100 V
Pins
1 - Gate 2 - Source Case - Drain
Dim. A A1 b D e e1
Millimeter M... |
| Description |
MegaMOS FET
RES, 11K OHM, 1%, 1/10W, 100PPM CHIP, 0805
RES D, 0805, 113000.000 OHM, 1.00%, 1/10W
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| File Size |
110.06K /
4 Page |
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it Online |
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INTERSIL[Intersil Corporation]
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| Part No. |
FRK264D FRK264H FRK264R FN3233
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| OCR Text |
204ae
Features
* 34A, 250V, RDS(on) = 0.120 * Second Generation Rad Hard MOSFET Results From New Design Concepts * Gamma Meets Pre-Rad Specifications to 100KRAD(Si) Defined End Point Specs at 300KRAD(Si) and 1000KRAD(Si) Performance Per... |
| Description |
34A, 250V, 0.120 Ohm, Rad Hard, N-Channel Power MOSFETs
From old datasheet system
34A/ 250V/ 0.120 Ohm/ Rad Hard/ N-Channel Power MOSFETs
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| File Size |
60.49K /
7 Page |
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it Online |
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