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Powerex, Inc.
POWEREX[Powerex Power Semiconductors]
Mitsubishi Electric Corporation
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| Part No. |
FS10VS-10
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| OCR Text |
...CHARACTERISTICS (TYPICAL) VGS = 20v 10V PD= 8V 125W DRAIN CURRENT ID (A) TC = 25C Pulse Test 6V
20
10
DRAIN CURRENT ID (A)
16
...5a 0 0 4 8 12 16 20
0.8
0.4 0 10-1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 DRAIN CURRENT ID (A)
... |
| Description |
Nch POWER MOSFET HIGH-SPEED SWITCHING USE 10 A, 500 V, 0.9 ohm, N-CHANNEL, Si, POWER, MOSFET
MITSUBISHI Nch POWER MOSFET HIGH-SPEED SWITCHING USE
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| File Size |
46.15K /
4 Page |
 View
it Online |
Download Datasheet
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Mitsubishi Electric Corporation
POWEREX[Powerex Power Semiconductors]
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| Part No. |
FS10VS-12
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| OCR Text |
...T CHARACTERISTICS (TYPICAL) VGS=20v 10V 8V 6V PD = 150W
CASE TEMPERATURE TC (C) OUTPUT CHARACTERISTICS (TYPICAL) VGS = 20v 10V PD= 8V 150...5a 0 0 4 8 12 16 20
0.8
0.4 0 10-1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 DRAIN CURRENT ID (A)
... |
| Description |
MITSUBISHI Nch POWER MOSFET HIGH-SPEED SWITCHING USE
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| File Size |
46.04K /
4 Page |
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it Online |
Download Datasheet |
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| Part No. |
RB051L-40TE25
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| OCR Text |
...ure vrm vr i o ifsm tj tstg 30v 20v 0.5a 2a 125 c 40 125 c electrical characteristc (ta=25 c) characteristic forward voltage reverse current symbol vf1 vf2 ir test condition if=100ma if=500ma vr=20v standard 0.36v max. 0.47v max. 10... |
| Description |
3 A, 40 V, SILICON, RECTIFIER DIODE
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| File Size |
249.15K /
3 Page |
View
it Online |
Download Datasheet |
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Mitsubishi Electric, Corp.
MITSUBISHI[Mitsubishi Electric Semiconductor]
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| Part No. |
FS10VS-14A
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| OCR Text |
...) 10
TC = 25C Pulse Test VGS = 20v 10V 5V PD = 150W
CASE TEMPERATURE TC (C) OUTPUT CHARACTERISTICS (TYPICAL) 20
VGS = 20v 10V TC = 25C ...5a
0.4 0 10-1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 DRAIN CURRENT ID (A)
0
0
4
8
12
... |
| Description |
HIGH-SPEED SWITCHING USE 高速开关使
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| File Size |
41.20K /
4 Page |
View
it Online |
Download Datasheet |
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|
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Powerex, Inc.
Powerex Power
Mitsubishi Electric Corporation
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| Part No. |
FS10VS-14A
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| OCR Text |
...) 10
TC = 25C Pulse Test VGS = 20v 10V 5V PD = 150W
CASE TEMPERATURE TC (C) OUTPUT CHARACTERISTICS (TYPICAL) 20
VGS = 20v 10V TC = 25C ...5a
0.4 0 10-1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 DRAIN CURRENT ID (A)
0
0
4
8
12
... |
| Description |
Nch POWER MOSFET HIGH-SPEED SWITCHING USE 10 A, 700 V, 1.3 ohm, N-CHANNEL, Si, POWER, MOSFET
MITSUBISHI Nch POWER MOSFET HIGH-SPEED SWITCHING USE
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| File Size |
46.21K /
4 Page |
View
it Online |
Download Datasheet |
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Mitsubishi Electric, Corp.
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
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| Part No. |
FS10VS-5
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| OCR Text |
...CHARACTERISTICS (TYPICAL) VGS = 20v 10V PD = 90W 6V
CASE TEMPERATURE TC (C) OUTPUT CHARACTERISTICS (TYPICAL) VGS = 20v 10V TC = 25C Pulse...5a 0 4 8 12 16 20
0.4
8
0.2 0 10-1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 DRAIN CURRENT ID (A)... |
| Description |
HIGH-SPEED SWITCHING USE 高速开关使
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| File Size |
41.12K /
4 Page |
View
it Online |
Download Datasheet |
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NIKO-SEM
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| Part No. |
P2804NVG
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| OCR Text |
...e niko-sem v ds = 0v, v gs = 20v gate-body leakage i gss v ds = 0v, v gs = 20v n-ch p-ch 100 100 na v ds = 32v, v gs = 0v ...5a n-ch p-ch 21 50 28 65 m ? v ds = 10v, i d = 7a forward transconductance 1 g fs v ds... |
| Description |
N- & P-Channel Enhancement Mode Field Effect Transistor
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| File Size |
537.41K /
8 Page |
View
it Online |
Download Datasheet |
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