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				Fujitsu Component Limited. http://
Part No.	MBM29LV200BC-12PFTN MBM29LV200BC-12PFTR MBM29LV200BC-70 MBM29LV200TC-90 MBM29LV200BC-90 MBM29LV200BC-90PFTN MBM29LV200BC-90PFTR MBM29LV200BC-70PFTR MBM29LV200BC-70PFTN
OCR Text	256k 8/128k 16) bit mbm29lv200tc -70/-90/-12 /mbm29lv200bc -70/-90/-12 n features ? single 3.0 v read, program, and erase minimizes sy...word, two 4k words, one 16k word, and three 32k words sectors in word mode one 16k byte, two 8k byte...
Description	2M (256K X 8/128K X 16) BIT
File Size	306.65K / 54 Page	View it Online	Download Datasheet

				ATMEL[ATMEL Corporation]
Part No.	AT24C12807 AT24C256 AT24C128
OCR Text	...rial EEPROMs 128K (16,384 x 8) 256K (32,768 x 8) A0 - A1 SDA SCL WP NC GND Address Inputs Serial Data Serial Clock Input Write Protec...word addressing requires a 14/15-bit data word address. 3 5121B-SEEPR-2/07 Table 2. Pin Capac...
Description	Two-wire Automotive Temperature Serial EEPROMs
File Size	397.87K / 17 Page	View it Online	Download Datasheet

				Cypress Semiconductor, Corp. CYPRESS SEMICONDUCTOR CORP
Part No.	CY7C1415BV18-250BZI CY7C1415BV18-167BZI
OCR Text	...k x 18 array 512k x 18 array 18 256k x 36 array clk a (17:0) gen. k k control logic address register d [35:0] read add. decode read data reg...word of data is driven onto the q [17:0] using c as the output timing reference. on the subsequent...
Description	36-Mbit QDR(TM)-II SRAM 4-Word Burst Architecture; Architecture: QDR-II, 4 Word Burst; Density: 36 Mb; Organization: 1Mb x 36; Vcc (V): 1.7 to 1.9 V 1M X 36 QDR SRAM, 0.45 ns, PBGA165 36-Mbit QDR-II SRAM 4-Word Burst Architecture
File Size	956.33K / 30 Page	View it Online	Download Datasheet

				SHARP[Sharp Electrionic Components]
Part No.	LH28F400SUB-Z0 LH28F400SUB
OCR Text	256K x 16) Flash Memory TOP VIEW * User-Configurable x8 or x16 Operation * 5 V Write/Erase Operation (5 V VPP, 3.3 V VCC) - No Requirem...WORD-SELECT ADDRESSES: Select a word within one 16K block. These addresses are latched during Data W...
Description	4M (512K 】 8, 256K 】 16) Flash Memory
File Size	274.05K / 34 Page	View it Online	Download Datasheet

				Mitsubishi Electric Corporation MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No.	M66287FP
OCR Text	...by 3-system individual input of 256k-word x 8-bit FIFO Mode2 : Simultaneous output of 1 to 3-line delay data by 1-system input of 256k-word x 8-bit FIFO Mode3 : Simultaneous output of 1 to 2-line delay data by 1-system input of 256k-word x ...
Description	262144-word x 8-bit x 3-FIELD MEMORY
File Size	184.38K / 21 Page	View it Online	Download Datasheet

				Integrated Silicon Solution, Inc.
Part No.	IS41LV32256 IS41LV32256-28PQ IS41LV32256-28TQ IS41LV32256-30PQ IS41LV32256-30TQ IS41LV32256-35PQ IS41LV32256-35TQ
OCR Text	256K x 32 (8-Mbit) EDO DYNAMIC RAM 3.3V, 100/83/66 MHz FEATURES * 262,144-word by 32-bit organization * Single +3.3V 0.3V power supply * Four CAS inputs for Byte Write and Byte Read control * Refresh modes: RAS-Only, CAS-Before-RAS (CBR)...
Description	x32 EDO Page Mode DRAM X32号，江户页面模式的DRAM 256K x 32 (8-Mbit) EDO DRAM 3.3V, 100/83/66 MHz(3.3V, 100/83/66 MHz,256K x 32带扩展数据输出动态RAM) 256K × 32兆位），江户内存3.3伏，100/83/66兆赫.3伏，100/83/66兆赫56K × 32带扩展数据输出动态内存） 256K x 32 (8-Mbit) EDO DYNAMIC RAM 3.3V, 100/83/66 MHz
File Size	154.51K / 19 Page	View it Online	Download Datasheet

				SHARP
Part No.	LH28F400SUB-Z0
OCR Text	256K x 16) Flash Memory TOP VIEW * User-Configurable x8 or x16 Operation * 5 V Write/Erase Operation (5 V VPP, 3.3 V VCC) - No Requirem...WORD-SELECT ADDRESSES: Select a word within one 16K block. These addresses are latched during Data W...
Description	4M (512K ?8, 256K ?16) Flash Memory 4M (512K bb 8/ 256K bb 16) Flash Memory
File Size	308.10K / 34 Page	View it Online	Download Datasheet

For 256k-word Found Datasheets File :: 1652 Search Time::1.859ms
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