| |
|
 |
VISHAY SEMICONDUCTORS
|
| Part No. |
BAS385-GS18
|
| OCR Text |
...ion temperature (c) 15822 v r =30v p - reverse power dissipation ( mw ) r r thja = 540 k/w - limit @ 100% v p r r - limit @ 80% v p r r 1 1...0 0.5 1.0 1.5 15824 0.1 1 10 100 1000 t j =25 c t j = 150 c i - forward curren t(a) f v f - forwar... |
| Description |
0.2 A, SILICON, SIGNAL DIODE
|
| File Size |
167.72K /
5 Page |
 View
it Online |
Download Datasheet
|
| |
|
|
Taiwan Semiconductor Co...
|
| Part No. |
UGA15120
|
| OCR Text |
... =1a, di f /dt= -100a/ s, v r =30v -65 2 operating junction temperature range 1 2
(t a =25c unless otherwise noted) document number: ds_d...0 5 10 15 20 0 25 50 75 100 125 150 175 average forward a current (a) case temperature ( o c) fig.1... |
| Description |
15A, 1200V Ultrafast Power Rectifier
|
| File Size |
224.33K /
4 Page |
View
it Online |
Download Datasheet |
| |
|
|
Wuxi NCE Power Semicond...
|
| Part No. |
NCE0117K
|
| OCR Text |
...rn-off fall time t f v dd =30v,i d =2a,r l =15 ? v gs =10v,r g =2.5 ? - 11.4 - ns total gate charge q g - 31 nc gate-so...0.5mh,rg=25 ?
nce0117 k pb free product http://www.ncepower.com wuxi nce power semiconductor ... |
| Description |
NCE N-Channel Enhancement Mode Power MOSFET
|
| File Size |
444.22K /
7 Page |
View
it Online |
Download Datasheet |
| |
|
|
Wuxi NCE Power Semicond...
|
| Part No. |
NCE0117
|
| OCR Text |
...rn-off fall time t f v dd =30v,i d =2a,r l =15 ? v gs =10v,r g =2.5 ? - 11.4 - ns total gate charge q g - 31 nc gate-so...0.5mh,rg=25 ?
nce0117 pb free product http://www.ncepower.com wuxi nce power semiconductor co... |
| Description |
NCE N-Channel Enhancement Mode Power MOSFET
|
| File Size |
341.35K /
7 Page |
View
it Online |
Download Datasheet |
| |
|
|
Wuxi NCE Power Semicond...
|
| Part No. |
NCE6020AK
|
| OCR Text |
...sfer capacitance c rss v ds =30v,v gs =0v, f=1.0mhz - 25 - pf switching characteristics (note 4) turn-on delay time t d(on) -...0.5mh,rg=25 ?
nce6020 a k pb free product http://www.ncepower.com wuxi nce power semiconducto... |
| Description |
NCE N-Channel Enhancement Mode Power MOSFET
|
| File Size |
420.95K /
7 Page |
View
it Online |
Download Datasheet |
| |
|
|
Wuxi NCE Power Semicond...
|
| Part No. |
NCE6020K
|
| OCR Text |
...sfer capacitance c rss v ds =30v,v gs =0v, f=1.0mhz - 25 - pf switching characteristics (note 4) turn-on delay time t d(on) -...0.5mh,rg=25 ?
nce6020k pb free product http://www.ncepower.com wuxi nce power semiconductor c... |
| Description |
NCE N-Channel Enhancement Mode Power MOSFET
|
| File Size |
531.69K /
7 Page |
View
it Online |
Download Datasheet |
| |
|
|
Wuxi NCE Power Semicond...
|
| Part No. |
NCE60R180
|
| OCR Text |
...leakage current i gss v gs =30v,v ds =0v 100 na gate threshold voltage v gs(th) v ds =v gs ,i d =250 a 2.5 3 3.5 v drain-source...0.9 1.3 v reverse recovery time t rr 310 ns reverse recovery charge q rr 5 uc peak revers... |
| Description |
N-Channel Super Junction Power MOSFET ll
|
| File Size |
656.29K /
9 Page |
View
it Online |
Download Datasheet |
| |
|
|
Wuxi NCE Power Semicond...
|
| Part No. |
NCE30H15K
|
| OCR Text |
...s. general features v ds =30v,i d =150a r ds(on) <4.0 m ? @ v gs =10v r ds(on) <5.0m ? @ v gs =4.5v high density cell design for ultra low rdson fully characterized avalanche voltage and current good stability and ... |
| Description |
NCE N-Channel Enhancement Mode Power MOSFET
|
| File Size |
429.89K /
7 Page |
View
it Online |
Download Datasheet |
| |
|
|
Wuxi NCE Power Semicond...
|
| Part No. |
NCE30H15
|
| OCR Text |
...s. general features v ds =30v,i d =150a r ds(on) <3.0 m ? @ v gs =10v r ds(on) <4.0m ? @ v gs =4.5v high density cell design for ultra low rdson fully characterized avalanche voltage and current good stability and ... |
| Description |
NCE N-Channel Enhancement Mode Power MOSFET
|
| File Size |
362.08K /
7 Page |
View
it Online |
Download Datasheet |
|
For
30v-0.055-3.5a-so-8 Found Datasheets File :: 69 Search Time::9.469ms
Page :: | 1 | 2 | 3 | 4 | 5 | <6> | 7 | |
▲Up To
Search▲ |
|
Price and Availability
|
