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  36 macrocells with 800 usable Datasheet PDF File

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    DCG10

Sanyo Electric Co.,Ltd.
SANYO[Sanyo Semicon Device]
Part No. DCG10
Description CPLD Logic IC; Logic Type:Programmable; No. of macrocells:256 ; Package/Case:208-PQFP; Mounting Type:surface mount
High-Speed Rectifiers, High-Frequency Rectifiers

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    DCG015

Sanyo Electric Co.,Ltd.
Sanyo Semicon Device
Part No. DCG015
Description MACH4 ISP EEPLD, SMD, TQFP144, 5V; Logic IC family:Programmable; Logic IC function:Programmable ISP; Voltage, supply:5V; Case style:TQFP; Base number:4; I/O lines, No. of:96; Logic function number:M4; macrocells, No. of:192; Pins, RoHS Compliant: Yes
High-Speed Switching Diode

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    QL4016-0PG208M QL4016-0PG208M_883 QL4016-0PL84M QL4016-0PL84M_883 QL4016-0PQ208M QL4016-0PQ208M_883 QL4016-0PQ240M QL401

QuickLogic Corp.
List of Unclassifed Manufacturers
Part No. QL4016-0PG208M QL4016-0PG208M_883 QL4016-0PL84M QL4016-0PL84M_883 QL4016-0PQ208M QL4016-0PQ208M_883 QL4016-0PQ240M QL4016-0PQ240M_883 QL4090-0CF100M QL4090-0CF100M_883 QL4090-0CF208M QL4090-0CF208M_883 QL4090-0CG144M QL4090-0CG144M_883 QL4090-0CG256M QL4090-0CG256M_883 QL4090-0CG456M QL4090-0CG456M_883 QL4090-0CG84M QL4090-0CG84M_883 QL4090-0PG208M QL4090-0PG208M_883 QL4090-0PL84M QL4090-0PL84M_883 QL4090-0PQ208M QL4090-0PQ208M_883 QL4090-0PQ240M QL4090-0PQ240M_883 QL4090-1CF100M QL4090-1CF100M_883 QL4090-1CF208M QL4090-1CF208M_883 QL4090-1CG144M QL4090-1CG144M_883 QL4090-1CG256M QL4090-1CG256M_883 QL4090-1CG456M QL4090-1CG456M_883 QL4016-2PQ240M_883 QL4036-2PQ240M_883 QL4090-2PQ240M_883 QL4016-2PG208M QL4016-2PG208M_883 QL4016-2PL84M QL4016-2PL84M_883 QL4016-0CG144M_883 QL4036-0CG144M_883 QL4016-0CG256M_883 QL4036-0CG256M_883 QL4036-2PG208M_883 QL4090-2PG208M_883 QL4016-2CF100M_883 QL4036-2CF100M_883 QL4090-2CF100M_883 QL4016-2CG84M_883 QL4036-1CG456M_883 QL4036-2CG144M_883 QL4036-1PQ208M_883 QL4036-2CG456M_883 QL4036-0CG84M_883 QL4036-1CG84M_883 QL4036-2CG256M_883 QL4036-0PL84M_883 QL4016-0CG144M QL4016-0CF100M QL4036-2PL84M_883 QL4036-0CF208M_883 QL4036-2PQ208M_883 QL4036-0CF100
Description QuickRAM Combining Performance, Density and Embedded RAM(性能、密度和嵌入式相结合的QuickRAM系列)
90,000 usable PLD Gate QuickRAM Combining Performance, Density and Embedded RAM

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    QuickLogic, Corp.
Part No. QL3060-0PB456C QL3060-1PB456M QL3060-1PB456C QL3060-2PB456C QL3060-4PB456C QL3060-4PQ208C QL3060-1PQ208I
Description 60,000 usable PLD gate pASIC 3 FPGA combining high performance and high density.
FPGA|1584-CELL|CMOS|QFP|208PIN|PLASTIC FPGA的| 1584细胞|的CMOS | QFP封装| 208PIN |塑料
FPGA|1584-CELL|CMOS|BGA|456PIN|PLASTIC

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    TE Connectivity, Ltd.
Part No. YQM0505-FEC YCMPB0507-FEC YCMPB0406-FEC
Description Programmable Logic IC; Logic Type:Programmable; No. of macrocells:102; Package/Case:144-TQFP; Leaded Process Compatible:No; Number of Circuits:576; Peak Reflow Compatible (260 C):No; Mounting Type:surface mount RoHS Compliant: No
MAX 3000A CPLD 256 MC 144-TQFP
Stratix II FPGA 180K FBGA-1020 连接5MM/PG29

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    Atmel, Corp.
ATMEL CORP
Part No. ATF1504SEL ATF1508SEL ATF1502SEL ATF1508SEL-15JC84 ATF1508SEL-15QC160 ATF1508SEL-15QC100 ATF1508SE-10JC84 ATF1508SE-10JI84 ATF1508SE-7QI160 ATF1508SE-7QC160
Description ATF1502/04/08/16SE(L) Preliminary [Updated 9/02. 69 Pages] Second Generation Industry Compatible 5V Logic Doubling CPLDs 32-512 macrocells. standard & low power w/ISP
EE PLD, 15 ns, PQCC84 PLASTIC, LCC-84
EE PLD, 15 ns, PQFP160 28 X 28 MM, PLASTIC, QFP-160
EE PLD, 15 ns, PQFP100 14 X 20 MM, PLASTIC, QFP-100
EE PLD, 10 ns, PQCC84 PLASTIC, LCC-84
EE PLD, 7.5 ns, PQFP160

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    Semiconductor Technology, Inc.
Part No. 2N6836 ST535 ST555 ST556 2N6835 ST554 FT401
Description TRANSISTOR | BJT | NPN | 400V V(BR)CEO | 2A I(C) | TO-3
NPN & PNP High Voltage Silicon High Power Transistors
Programmable Logic IC; Logic Type:Programmable; No. of macrocells:64; Package/Case:44-PLCC; Mounting Type:Surface Mount
IC CONFIG DEVICE 212KBIT 20-PLCC
TRANSISTOR | BJT | NPN | 450V V(BR)CEO | 8A I(C) | TO-204AC
IC CONFIG DEVICE 1MBIT 20-PLCC

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    Renesas Electronics Corporation.
Renesas Electronics, Corp.
Part No. M38030F2L-XXXHP M38030F2L-XXXKP M38030F2L-XXXSP M38030F2L-XXXWG M38030MAL-XXXWG M38030MAL-XXXKP M38030FAL-XXXSP M38031FAL-XXXHP M38030FAL-XXXWG M38030MAL-XXXHP M38030FAL-XXXKP M38031FAL-XXXKP M38030FAL-XXXHP M38031FAL-XXXSP M38031FAL-XXXWG M38030MAL-XXXSP M38030F3L-XXXHP M38030F3L-XXXWG M38030M3L-XXXKP M38030F3L-XXXSP M38030F3L-XXXKP M38030M3L-XXXHP M38030FBL-XXXWG M38030MBL-XXXHP M38030FBL-XXXHP M38030FBL-XXXSP M38030MBL-XXXKP M38030M2L-XXXHP M38030M2L-XXXKP M38030M2L-XXXSP M38030M2L-XXXWG M38031F2L-XXXHP M38031F2L-XXXKP M38031F2L-XXXSP M38031F2L-XXXWG M38030FB-XXXHP M38031FBL-XXXSP M38035MBL-XXXSP M38038FBL-XXXSP M38039FBL-XXXSP M38030MBL-XXXSP M38036MBL-XXXSP M38037FBL-XXXSP M38037MBL-XXXSP M38036FBL-XXXSP M38038MBL-XXXSP M38031FC-XXXHP M38031FC-XXXKP M38031FC-XXXWG M38031FCL-XXXHP M38031FCL-XXXKP M38031FCL-XXXSP M38031FCL-XXXWG M38031F5-XXXKP M38031F5-XXXSP M38031F5-XXXWG M38031F5L-XXXHP M38031F5L-XXXKP M38031F5L-XXXSP M38031F5L-XXXWG M38030F1-XXXHP M38030F1-XXXKP M38030F1-XXXSP M38030F1-XXXWG M38030F1L-XXXHP M38030F1L-XXXKP M38030F1L-XXXSP M38030F1L-XXXWG M38031F1-XXXKP M38031F1-XXXWG M38031F1L-XXXHP M38031F1L-XXXKP M38031F6-XXXHP M38031F6-XXXKP M38031F6-XXXSP M38031F6-XXXWG M
Description 256 Kbit (32K x 8) nvSRAM; Organization: 32Kb x 8; Vcc (V): 2.7 to 3.6 V; Density: 256 Kb; Package: SOIC
3.3V Zero Delay Clock Buffer; Voltage (V): 3.3 V; Frequency Range: 10 MHz to 133 MHz; Outputs: 5; Operating Range: 0 to 70 C
256K (32K x 8) Static RAM; Density: 256 Kb; Organization: 32Kb x 8; Vcc (V): 4.50 to 5.50 V;
Three-PLL General Purpose FLASH Programmable Clock Generator; Voltage (V): 3.3 V; Input Range: 1 MHz to 166 MHz; Output Range: 1 MHz to 200 MHz; Outputs: 6
5V, 3.3V, ISR(TM) High-Performance CPLDs; # macrocells: 256; Vcc (V): 3.3; fMax (MHz): 66; tPD (ns): 12
8-Mbit (512K x 16) Static RAM; Density: 8 Mb; Organization: 512Kb x 16; Vcc (V): 2.20 to 3.60 V;
9-Mbit (256K x 36/512K x 18) Pipelined SRAM; Architecture: Standard Sync, Pipeline SCD; Density: 9 Mb; Organization: 512Kb x 18; Vcc (V): 3.1 to 3.6 V
9-Mbit (256K x 36/512K x 18) Flow-Through SRAM; Architecture: Standard Sync, Flow-through; Density: 9 Mb; Organization: 512Kb x 18; Vcc (V): 3.1 to 3.6 V
18-Mbit QDR(TM)-II SRAM 4-Word Burst Architecture; Architecture: QDR-II, 4 Word Burst; Density: 18 Mb; Organization: 512Kb x 36; Vcc (V): 1.7 to 1.9 V
Four Output PCI-X and General Purpose Buffer; Voltage (V): 3.3 V; Frequency Range: 0 MHz to 140 MHz; Outputs: 4; Operating Range: 0 to 70 C
18-Mbit QDR(TM)-II SRAM 2-Word Burst Architecture; Architecture: QDR-II, 2 Word Burst; Density: 18 Mb; Organization: 512Kb x 36; Vcc (V): 1.7 to 1.9 V
9-Mbit (256K x 36/512K x 18) Flow-Through SRAM with NoBL(TM) Architecture; Architecture: NoBL, Flow-through; Density: 9 Mb; Organization: 512Kb x 18; Vcc (V): 3.1 to 3.6 V
9-Mbit (256K x 36/512K x 18) Pipelined SRAM with NoBL(TM) Architecture; Architecture: NoBL, Pipeline; Density: 9 Mb; Organization: 512Kb x 18; Vcc (V): 2.4 to 2.6 V
4-Mbit (512K x 8) Static RAM; Density: 4 Mb; Organization: 512Kb x 8; Vcc (V): 4.50 to 5.50 V;
4-Mbit (256K x 16) Static RAM; Density: 4 Mb; Organization: 256Kb x 16; Vcc (V): 2.20 to 3.60 V;
64K x 16 Static RAM; Density: 1 Mb; Organization: 64Kb x 16; Vcc (V): 3.0 to 3.6 V;
1-Mbit (64K x 16) Static RAM; Density: 1 Mb; Organization: 64Kb x 16; Vcc (V): 4.5 to 5.5 V;
9-Mbit (256K x 36/512K x 18) Pipelined SRAM; Architecture: Standard Sync, Pipeline SCD; Density: 9 Mb; Organization: 256Kb x 36; Vcc (V): 3.1 to 3.6 V
1-Mbit (64K x 16) Static RAM; Density: 1 Mb; Organization: 64Kb x 16; Vcc (V): 3.0 to 3.6 V;
4 Mbit (512K x 8/256K x 16) nvSRAM; Organization: 512Kb x 8; Vcc (V): 2.7 to 3.6 V; Density: 4 Mb; Package: TSOP
4 Mbit (512K x 8/256K x 16) nvSRAM; Organization: 256Kb x 16; Vcc (V): 2.7 to 3.6 V; Density: 4 Mb; Package: TSOP
16-Mbit (1M x 16 / 2M x 8) Static RAM; Density: 16 Mb; Organization: 1Mb x 16; Vcc (V): 4.50 to 5.50 V;
4K x 16/18 and 8K x 16/18 Dual-Port Static RAM with SEM, INT, BUSY; Density: 128 Kb; Organization: 8Kb x 16; Vcc (V): 4.5 to 5.5 V; Speed: 35 ns
9-Mbit (256K x 36/512K x 18) Pipelined SRAM with NoBL(TM) Architecture; Architecture: NoBL, Pipeline; Density: 9 Mb; Organization: 256Kb x 36; Vcc (V): 3.1 to 3.6 V
9-Mbit (256K x 36/512K x 18) Flow-Through SRAM with NoBL(TM) Architecture; Architecture: NoBL, Flow-through; Density: 9 Mb; Organization: 256Kb x 36; Vcc (V): 3.1 to 3.6 V
9-Mbit (256K x 36/512K x 18) Pipelined SRAM with NoBL(TM) Architecture; Architecture: NoBL, Pipeline; Density: 9 Mb; Organization: 256Kb x 36; Vcc (V): 2.4 to 2.6 V
9-Mbit (256K x 36/512K x 18) Pipelined SRAM with NoBL(TM) Architecture; Architecture: NoBL, Pipeline; Density: 9 Mb; Organization: 512Kb x 18; Vcc (V): 3.1 to 3.6 V
8-Mbit (512K x 16) Static RAM; Density: 8 Mb; Organization: 512Kb x 16; Vcc (V): 4.50 to 5.50 V;
9-Mbit (256K x 36/512K x 18) Flow-Through SRAM; Architecture: Standard Sync, Flow-through; Density: 9 Mb; Organization: 256Kb x 36; Vcc (V): 3.1 to 3.6 V
256K x 16 Static RAM; Density: 4 Mb; Organization: 256Kb x 16; Vcc (V): 4.5 to 5.5 V;
9-Mbit (256K x 36/512K x 18) Pipelined DCD Sync SRAM; Architecture: Standard Sync, Pipeline DCD; Density: 9 Mb; Organization: 256Kb x 36; Vcc (V): 3.1 to 3.6 V
4-Mbit (256K x 16) Static RAM; Density: 4 Mb; Organization: 256Kb x 16; Vcc (V): 3.0 to 3.6 V;
8-Mbit (1024K x 8) Static RAM; Density: 8 Mb; Organization: 1Mb x 8; Vcc (V): 2.20 to 3.60 V;
18-Mbit (512K x 36/1M x 18) Pipelined SRAM with NoBL(TM) Architecture; Architecture: NoBL, Pipeline; Density: 18 Mb; Organization: 512Kb x 36; Vcc (V): 3.1 to 3.6 V
256K x 16 Static RAM; Density: 4 Mb; Organization: 256Kb x 16; Vcc (V): 3.0 to 3.6 V;
8-Mbit (1M x 8) Static RAM; Density: 8 Mb; Organization: 1Mb x 8; Vcc (V): 2.20 to 3.60 V;
3.3V Zero Delay Buffer; Voltage (V): 3.3 V; Frequency Range: 10 MHz to 133 MHz; Outputs: 8; Operating Range: -40 to 85 C
Programmable Skew Clock Buffer; Voltage (V): 5.0 V; Operating Frequency: 3.75 MHz to 80 MHz; Outputs: 8; Operating Range: -40 to 85 C
18-Mbit (512K x 36/1M x 18) Flow-Through SRAM with NoBL(TM) Architecture; Architecture: NoBL, Flow-through; Density: 18 Mb; Organization: 512Kb x 36; Vcc (V): 3.1 to 3.6 V
18-Mbit (512K x 36/1M x 18) Pipelined SRAM with NoBL(TM) Architecture; Architecture: NoBL, Pipeline; Density: 18 Mb; Organization: 1Mb x 18; Vcc (V): 3.1 to 3.6 V
512K x 8 Static RAM; Density: 4 Mb; Organization: 512Kb x 8; Vcc (V): 4.5 to 5.5 V;
18-Mbit (512K x 36/1M x 18) Pipelined SRAM with NoBL(TM) Architecture; Architecture: NoBL, Pipeline; Density: 18 Mb; Organization: 512Kb x 36; Vcc (V): 2.4 to 2.6 V
2.5V or 3.3V, 200-MHz, 1:12 Clock Distribution Buffer; Voltage (V): 2.5/3.3 V; Frequency Range: 0 MHz to 200 MHz; Outputs: 12; Operating Range: -40 to 85 C
3.3V Zero Delay Clock Buffer; Voltage (V): 3.3 V; Frequency Range: 10 MHz to 133 MHz; Outputs: 5; Operating Range: -40 to 85 C
2M x 8 Static RAM; Density: 16 Mb; Organization: 2Mb x 8; Vcc (V): 3.0 to 3.6 V;
16 Mbit (512K X 32) Static RAM; Density: 16 Mb; Organization: 512Kb x 32; Vcc (V): 3.0 to 3.6 V;
3.3V Zero Delay Buffer; Voltage (V): 3.3 V; Frequency Range: 10 MHz to 133 MHz; Outputs: 8; Operating Range: 0 to 70 C
8-Mbit (1M x 8) Static RAM; Density: 8 Mb; Organization: 1Mb x 8; Vcc (V): 3.0 to 3.6 V;
5V, 3.3V, ISR(TM) High-Performance CPLDs; # macrocells: 64; Vcc (V): 5; fMax (MHz): 125; tPD (ns): 6
2-Mbit (128K x 16) Static RAM; Density: 2 Mb; Organization: 128Kb x 16; Vcc (V): 3.0 to 3.6 V;
16-Mbit (1M x 16) Static RAM; Density: 16 Mb; Organization: 1Mb x 16; Vcc (V): 3.0 to 3.6 V;
4-Mbit (256K x 18) Pipelined DCD Sync SRAM; Architecture: Standard Sync, Pipeline DCD; Density: 4 Mb; Organization: 256Kb x 18; Vcc (V): 3.1 to 3.6 V
512K (32K x 16) Static RAM; Density: 512 Kb; Organization: 32Kb x 16; Vcc (V): 3.0 to 3.6 V;
4-Mbit (128K x 36) Pipelined SRAM with NoBL(TM) Architecture; Architecture: NoBL, Pipeline; Density: 4 Mb; Organization: 128Kb x 36; Vcc (V): 3.1 to 3.6 V
1M x 16 Static RAM; Density: 16 Mb; Organization: 1Mb x 16; Vcc (V): 3.0 to 3.6 V;
Programmable Skew Clock Buffer; Voltage (V): 5.0 V; Operating Frequency: 3.75 MHz to 80 MHz; Outputs: 8; Operating Range: 0 to 70 C
3.3V Zero Delay Clock Buffer; Voltage (V): 3.3 V; Frequency Range: 10 MHz to 133 MHz; Outputs: 9; Operating Range: 0 to 70 C
MoBL(R) 2 Mbit (128K x 16) Static RAM; Density: 2 Mb; Organization: 128Kb x 16; Vcc (V): 2.20 to 3.60 V;
Rambus(R) XDR(TM) Clock Generator; VDD: 2.5 V; Input Frequency: 100 MHz to 133 MHz; Output Frequency: 300 MHz to 800 MHz; # Out: 4
2-Mbit (128K x 16) Static RAM; Density: 2 Mb; Organization: 128Kb x 16; Vcc (V): 2.20 to 3.60 V;
4-Mbit (128K x 36) Pipelined Sync SRAM; Architecture: Standard Sync, Pipeline SCD; Density: 4 Mb; Organization: 128Kb x 36; Vcc (V): 3.1 to 3.6 V
5V, 3.3V, ISR(TM) High-Performance CPLDs; # macrocells: 128; Vcc (V): 5; fMax (MHz): 167; tPD (ns): 7
2.5V or 3.3V, 200-MHz, 1:10 Clock Distribution Buffer; Voltage (V): 2.5/3.3 V; Frequency Range: 0 MHz to 200 MHz; Outputs: 10; Operating Range: 0 to 70 C
5V, 3.3V, ISR(TM) High-Performance CPLDs; # macrocells: 128; Vcc (V): 5; fMax (MHz): 100; tPD (ns): 7
5V, 3.3V, ISR(TM) High-Performance CPLDs; # macrocells: 128; Vcc (V): 5; fMax (MHz): 125; tPD (ns): 7
18-Mbit DDR-II SRAM 2-Word Burst Architecture; Architecture: DDR-II CIO, 2 Word Burst; Density: 18 Mb; Organization: 512Kb x 36; Vcc (V): 1.7 to 1.9 V
Low Voltage Programmable Skew Clock Buffer; Voltage (V): 3.3 V; Operating Frequency: 3.75 MHz to 80 MHz; Outputs: 8; Operating Range: 0 to 70 C
Spread Spectrum Clock Generator; Voltage(V): 3.3 V; Input Frequency Range: 25 MHz to 100 MHz; Output Frequency Range: 25 MHz to 100 MHz; Operating Range: 0 to 70 C; Package: SOIC
Low Skew Clock Buffer; Voltage (V): 5.0 V; Operating Frequency: 3.75 MHz to 80 MHz; Outputs: 8; Operating Range: 0 to 70 C
5V, 3.3V, ISR(TM) High-Performance CPLDs; # macrocells: 64; Vcc (V): 3.3; fMax (MHz): 143; tPD (ns): 9 单芯位CMOS微机
5V, 3.3V, ISR(TM) High-Performance CPLDs; # macrocells: 64; Vcc (V): 5; fMax (MHz): 154; tPD (ns): 6 单芯位CMOS微机
SINGLE-CHIP 8-BIT CMOS MICROCOMPUTER 单芯位CMOS微机
5V, 3.3V, ISR(TM) High-Performance CPLDs; # macrocells: 64; Vcc (V): 3.3; fMax (MHz): 100; tPD (ns): 9 单芯位CMOS微机
5V, 3.3V, ISR(TM) High-Performance CPLDs; # macrocells: 128; Vcc (V): 3.3; fMax (MHz): 83; tPD (ns): 10 单芯位CMOS微机
5V, 3.3V, ISR(TM) High-Performance CPLDs; # macrocells: 64; Vcc (V): 5; fMax (MHz): 125; tPD (ns): 6 单芯位CMOS微机
Three-PLL General-Purpose EPROM Programmable Clock Generator; Voltage (V): 3.3/5.0 V; Input Range: 1 MHz to 30 MHz; Output Range: .077 MHz to 100 MHz; Outputs: 6 单芯位CMOS微机
8-Mbit (512K x 16) MoBL(R) Static RAM; Density: 8 Mb; Organization: 512Kb x 16; Vcc (V): 2.20 to 3.60 V; 单芯位CMOS微机
High Speed Low Voltage Programmable Skew Clock Buffer; Voltage (V): 3.3 V; Operating Frequency: 3.75 MHz to 110 MHz; Outputs: 8; Operating Range: 0 to 70 C 单芯位CMOS微机
3.3V SDRAM Buffer for Mobile PCs with 4 SO-DIMMs; Voltage (V): 3.3 V; Frequency Range: 0 MHz to 100 MHz; Outputs: 10; Operating Range: 0 to 70 C 单芯位CMOS微机
3.3V Zero Delay Clock Buffer; Voltage (V): 3.3 V; Frequency Range: 10 MHz to 133 MHz; Outputs: 9; Operating Range: -40 to 85 C 单芯位CMOS微机
Programmable Skew Clock Buffer; Voltage (V): 5.0 V; Operating Frequency: 3.75 MHz to 80 MHz; Outputs: 8; Operating Range: -40 to 85 C 单芯位CMOS微机
2-Mbit (128K x 16) Static RAM; Density: 2 Mb; Organization: 128Kb x 16; Vcc (V): 3.0 to 3.6 V; 单芯位CMOS微机
MoBL(R) 1 Mbit (128K x 8) Static RAM; Density: 1 Mb; Organization: 128Kb x 8; Vcc (V): 2.20 to 3.60 V; 单芯位CMOS微机
18-Mbit QDR(TM)-II SRAM 2-Word Burst Architecture; Architecture: QDR-II, 2 Word Burst; Density: 18 Mb; Organization: 1Mb x 18; Vcc (V): 1.7 to 1.9 V 单芯位CMOS微机
1-Mbit (128K x 8) Static RAM; Density: 1 Mb; Organization: 128Kb x 8; Vcc (V): 4.50 to 5.50 V; 单芯位CMOS微机
4-Mbit (256K x 18) Pipelined Sync SRAM; Architecture: Standard Sync, Pipeline SCD; Density: 4 Mb; Organization: 256Kb x 18; Vcc (V): 3.1 to 3.6 V 单芯位CMOS微机
2-Mbit (64K x 32) Pipelined Sync SRAM; Architecture: Standard Sync, Pipeline SCD; Density: 2 Mb; Organization: 64Kb x 32; Vcc (V): 3.1 to 3.6 V 单芯位CMOS微机
200-MHz Field Programmable Zero Delay Buffer; Voltage (V): 2.5/3.3 V; Frequency Range: 10 MHz to 200 MHz; Outputs: 12; Operating Range: -40 to 85 C 单芯位CMOS微机
2-Mbit (128K x 16) Static RAM; Density: 2 Mb; Organization: 128Kb x 16; Vcc (V): 2.20 to 3.60 V; 单芯位CMOS微机
SINGLE-CHIP 8-BIT CMOS MICROCOMPUTER 单芯8位CMOS微机
2-Mbit (256K x 8) Static RAM; Density: 2 Mb; Organization: 256Kb x 8; Vcc (V): 2.20 to 3.60 V; 单芯8位CMOS微机
Very Low Jitter Field and Factory Programmable Clock Generator; Voltage (V): 3.3 V; Input Range: 10 MHz to 133 MHz; Output Range: 20 MHz to 200 MHz; Outputs: 2 单芯位CMOS微机
3.3V Zero Delay Clock Buffer; Voltage (V): 3.3 V; Frequency Range: 10 MHz to 133 MHz; Outputs: 5; Operating Range: 0 to 70 C 单芯位CMOS微机
3.3V Zero Delay Clock Buffer; Voltage (V): 3.3 V; Frequency Range: 10 MHz to 133 MHz; Outputs: 5; Operating Range: -40 to 85 C 单芯位CMOS微机
Three-PLL General Purpose FLASH Programmable Clock Generator; Voltage (V): 3.3 V; Input Range: 1 MHz to 166 MHz; Output Range: 0 MHz to 200 MHz; Outputs: 3 单芯位CMOS微机
1:8 Clock Fanout Buffer; Voltage (V): 3.3 V; Frequency Range: 0 MHz to 350 MHz; Outputs: 8; Operating Range: -40 to 85 C 单芯位CMOS微机
Quad PLL Clock Generator with 2-Wire Serial Interface; Voltage (V): 2.5/3.3 V; Input Range: 27 MHz to 27 MHz; Output Range: 4.2 MHz to 166 MHz; Outputs: 5 单芯位CMOS微机
2.5V or 3.3V, 200-MHz, 1:12 Clock Distribution Buffer; Voltage (V): 2.5/3.3 V; Frequency Range: 0 MHz to 200 MHz; Outputs: 12; Operating Range: 0 to 70 C 单芯位CMOS微机
3.3V Zero Delay Clock Buffer; Voltage (V): 3.3 V; Frequency Range: 10 MHz to 133 MHz; Outputs: 9; Operating Range: 0 to 70 C 单芯位CMOS微机
High Speed Multi-phase PLL Clock Buffer; Voltage (V): 3.3 V; Operating Frequency: 24 MHz to 200 MHz; Outputs: 11; Operating Range: 0 to 70 C 单芯位CMOS微机
2.5V or 3.3V, 200-MHz, 1:18 Clock Distribution Buffer; Voltage (V): 2.5/3.3 V; Frequency Range: 0 MHz to 200 MHz; Outputs: 18; Operating Range: -40 to 85 C 单芯位CMOS微机
-bit AVR Microcontroller with 8K Bytes In- System Programmable Flash 位AVR微控制器具有8K字节的系统内可编程闪
2.5V or 3.3V, 200-MHz, 1:12 Clock Distribution Buffer; Voltage (V): 2.5/3.3 V; Frequency Range: 0 MHz to 200 MHz; Outputs: 12; Operating Range: 0 to 70 C
1:8 Clock Fanout Buffer; Voltage (V): 3.3 V; Frequency Range: 0 MHz to 350 MHz; Outputs: 8; Operating Range: 0 to 70 C
Spread Spectrum Clock Generator; Voltage(V): 3.3 V; Input Frequency Range: 4 MHz to 32 MHz; Output Frequency Range: 4 MHz to 32 MHz; Operating Range: 0 to 70 C; Package: SOIC
High Speed Low Voltage Programmable Skew Clock Buffer; Voltage (V): 3.3 V; Operating Frequency: 3.75 MHz to 110 MHz; Outputs: 8; Operating Range: 0 to 70 C
5V, 3.3V, ISR(TM) High-Performance CPLDs; # macrocells: 64; Vcc (V): 3.3; fMax (MHz): 100; tPD (ns): 9

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    Electronic Theatre Controls, Inc.
NXP Semiconductors N.V.
OMRON Scientific Technologies, Inc.
Supertex, Inc.
TE Connectivity, Ltd.
Omron Electronics, LLC
Part No. Z0110NA/2AL2 Z0110NN/2AL2 Z0107MA/1AA2 Z0109MA/1AA2 Z0103MA/1AA2 Z0103MN/1AA2 Z0110MN/1AA2 Z0110MA/1AA2 Z0109MN/1AA2 Z0107MN/1AA2 Z0103MA/2AL2 Z0109MA/5AA4 Z0103MA/5AA4 Z0107MA/5AA4 Z0110MA/5AA4 Z0109NA/1AA2 Z0109SA/1AA2 Z0103SA/1AA2 Z0107NA/1AA2 Z0107SA/1AA2 Z0110SA/1AA2 Z0103NA/1AA2 Z0110NA/1AA2 Z0109NN/1AA2 Z0109SN/1AA2 Z0103NA/5AA4 Z0109NA/5AA4 Z0109SA/5AA4 Z0110SA/5AA4 Z0103SA/5AA4 Z0107NA/5AA4 Z0107SA/5AA4 Z0110NA/5AA4 Z0107SN/1AA2 Z0103MN/5AA4 Z0107MN/5AA4 Z0109MN/5AA4 Z0103SN/1AA2 Z0103NN/1AA2 Z0103NA/2AL2 Z0109MA/2AL2 Z0107SA/2AL2 Z0110NN/1AA2 Z0110MN/5AA4 Z0103SA/2AL2 Z0110SN/2AL2 Z0109NN/5AA4
Description TRIAC|800V V(DRM)|1A I(T)RMS|TO-92
MEMORY 16MBYTES 3 VOLT STRATAFLASH 56-LEAD TSOP
256MB SDRAM SODIMM
IC APEX 20KE FPGA 200K 484-FBGA
IC, ISP EPM7192SQC160-7
IC MAX 7000 CPLD 32 44-PLCC
FPGA Logic IC; Logic Type:Programmable; No. of macrocells:102; Package/Case:144-TQFP; Leaded Process Compatible:No; Number of Circuits:1728; Peak Reflow Compatible (260 C):No; Mounting Type:surface mount RoHS Compliant: No
CPLD Logic IC; Logic Type:Programmable; No. of macrocells:64; Package/Case:68-PLCC; Leaded Process Compatible:No; Peak Reflow Compatible (260 C):No; Mounting Type:Surface Mount RoHS Compliant: No
8Mb Boot Block Flash
TRIAC|700V V(DRM)|1A I(T)RMS|SOT-223 可控硅| 700V的五(DRM)的| 1A条口(T)的有效值|采用SOT - 223
TRIAC|800V V(DRM)|1A I(T)RMS|SOT-223 可控硅| 800V的五(DRM)的| 1A条口(T)的有效值|采用SOT - 223
Programmable Logic IC; Logic Type:Programmable; Package/Case:84-PLCC; Leaded Process Compatible:No; Peak Reflow Compatible (260 C):No; Mounting Type:Surface Mount RoHS Compliant: No 可控硅| 800V的五(DRM)的| 1A条口T)的有效值|2
TRIAC|600V V(DRM)|1A I(T)RMS|TO-92 可控硅| 600V的五(DRM)的| 1A条口T)的有效值|92
TRIAC|700V V(DRM)|1A I(T)RMS|TO-92 可控硅| 700V的五(DRM)的| 1A条口(T)的有效值|2
TRIAC|600V V(DRM)|1A I(T)RMS|SOT-223 可控硅| 600V的五(DRM)的| 1A条口(T)的有效值|采用SOT - 223
TRIAC|800V V(DRM)|1A I(T)RMS|SOT-223 可控硅| 800V的五(DRM)的| 1A条口T)的有效值|采用SOT - 223

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    Pletronics
Part No. ST2245P-4.000MHZ ST2245E-4.000MHZ ST2245EP-4.000MHZ-SMD ST2245-4.000MHZ-SMD ST2245P-4.000MHZ-SMD ST2244-60.000MHZ-SMD ST2244EP-60.000MHZ-SMD ST2245P-60.000MHZ-SMD ST2244-4.000MHZ-SMD ST2245EP-60.000MHZ-SMD ST2244EP-4.000MHZ-SMD ST2244E-4.000MHZ-SMD ST2245E-60.000MHZ-SMD ST2244E-60.000MHZ-SMD ST2244P-60.000MHZ-SMD ST2245-60.000MHZ-SMD ST2244P-4.000MHZ-SMD
Description IC ACEX 1K FPGA 50K 208-PQFP
Crystal Oscillator
FPGA, FLEX 6000, 24K GATES, PQFP208; Logic IC family:FPGA; Logic IC Base Number:6024; Logic IC function:EPF6024A; Voltage, supply:3.30V; Case style:PQFP; Gates, No. of:24000; I/O lines, No. of:171; Pins, No. of:208; Temp, op. RoHS Compliant: Yes
IC MAX 7000 CPLD 128 100-TQFP
IC ACEX 1K FPGA 30K 208-PQFP
MAX 3000A CPLD 64 MC 44-PLCC
Cyclone II FPGA 5K TQFP-144
Stratix II FPGA 60K FBGA-1020
Cyclone II FPGA 5K PQFP-208
Stratix II FPGA 30K FBGA-672
Cyclone FPGA 12K PQFP-240
MAX II CPLD 1270 LE 256-FBGA
Stratix II FPGA 15K FBGA-484
IC APEX 20KE FPGA 100K
Programmable Logic IC; Logic Type:Programmable; No. of macrocells:176; Package/Case:256-FBGA; Leaded Process Compatible:No; Number of Circuits:1728; Peak Reflow Compatible (260 C):No RoHS Compliant: No
Cyclone II FPGA 35K FBGA-672
CONFIGURATION DEVICE, 1.6MBIT, PLCC20; Memory type:Configuration FLASH; Interface type:Serial; Memory size:1.6Mbit; Frequency:16.7MHz; Temp, op. min:0(degree C); Temp, op. max:70(degree C); Case style:PLCC; Temperature, operating RoHS Compliant: Yes
MAX 3000A CPLD 256 MC 144-TQFP 晶体振荡
Programmable Logic IC; Logic Type:Programmable; No. of macrocells:147; Package/Case:208-PQFP; Leaded Process Compatible:No; Number of Circuits:1728; Peak Reflow Compatible (260 C):No; Mounting Type:surface mount RoHS Compliant: No

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Price & Availability of 36 macrocells with 800 usable