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Intel, Corp. Intel Corp.
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Part No. |
GE28F320W30B70 GE28F320W30B85 RD28F6408W30T85 28F640W30 28F3204W30
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Description |
Segmented Alphanumeric LED; Display Technology:LED; No. of Digits/Alpha:1; Body Material:GaAsP; LED Color:Red; Leaded Process Compatible:Yes; Luminous Intensity:7.5mcd RoHS Compliant: Yes 2M X 16 FLASH 1.8V PROM, PBGA56 1.8 volt Intel Wireless Flash Memory with 3 volt I/O and SRAM (W30) 2M X 16 FLASH 1.8V PROM, PBGA56 1.8 volt Intel Wireless Flash Memory with 3 volt I/O and SRAM (W30) SPECIALTY MEMORY CIRCUIT, PBGA80 1.8 volt Intel Wireless Flash Memory with 3 volt I/O and SRAM (W30) 1.8伏英特尔无线闪存伏的I / O和SRAM(宽30
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File Size |
646.95K /
82 Page |
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it Online |
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![ASI10730 VHB50-28S](Maker_logo/advanced_semiconductor.GIF)
Advanced Semiconductor, Inc. ASI[Advanced Semiconductor]
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Part No. |
ASI10730 VHB50-28S
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Description |
NPN Silicon RF Power Transistor(Ic:6.5 A,Vcbo: 65 V,vceo: 35 V,Vebo: 4.0 V)(NPN 硅型射频功率晶体Ic:6.5 A,Vcbo: 65 V,vceo: 35 V,Vebo: 4.0 V)) VHF BAND, Si, NPN, RF POWER TRANSISTOR
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File Size |
16.22K /
1 Page |
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it Online |
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![ASI10748 VMB80-28F ALR015 ASI10511 ASI10770 MRF314A](Maker_logo/advanced_semiconductor.GIF)
Advanced Semiconductor, Inc. ASI[Advanced Semiconductor]
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Part No. |
ASI10748 VMB80-28F ALR015 ASI10511 ASI10770 MRF314A
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Description |
NPN Silicon RF Power Transistor(Ic:9.0 A,Vcbo: 65 V,vceo: 36 V,Vebo: 4.0 V)(NPN 硅型射频功率晶体Ic:9.0 A,Vcbo: 65 V,vceo: 36 V,Vebo: 4.0 V)) VHF BAND, Si, NPN, RF POWER TRANSISTOR
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File Size |
16.54K /
1 Page |
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it Online |
Download Datasheet
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![CSB1065 CSB1065N CSB1065R CSB1065P CSB1065Q](Maker_logo/continental_device_india_limited.GIF)
Continental Device India Limited
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Part No. |
CSB1065 CSB1065N CSB1065R CSB1065P CSB1065Q
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Description |
10.000W Low Frequency PNP Plastic Leaded Transistor. 50V vceo, 3.000A Ic, 56 - 390 hfe. Complementary CSD1506 10.000W Low Frequency PNP Plastic Leaded Transistor. 50V vceo, 3.000A Ic, 56 - 120 hfe. Complementary CSD1506N 10.000W Low Frequency PNP Plastic Leaded Transistor. 50V vceo, 3.000A Ic, 180 - 390 hfe. Complementary CSD1506R 10.000W Low Frequency PNP Plastic Leaded Transistor. 50V vceo, 3.000A Ic, 82 - 180 hfe. Complementary CSD1506P 10.000W Low Frequency PNP Plastic Leaded Transistor. 50V vceo, 3.000A Ic, 120 - 270 hfe. Complementary CSD1506Q
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File Size |
131.15K /
3 Page |
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it Online |
Download Datasheet
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Continental Device India, Ltd. CDIL[Continental Device India Limited] Continental Device Indi...
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Part No. |
CFA1012 CFA1012O CFC2562O CFA1012Y CFC2562Y
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Description |
25.000W Medium Power NPN Plastic Leaded Transistor. 50V vceo, 5.000A Ic, 70 - 240 hfe. Complementary CFA1012Y 25.000W Medium Power NPN Plastic Leaded Transistor. 50V vceo, 5.000A Ic, 70 - 140 hfe. Complementary CFA1012O 25.000W Medium Power PNP Plastic Leaded Transistor. 50V vceo, 5.000A Ic, 70 - 140 hfe. Complementary CFC2562O PNP SILICON PLANAR POWER TRANSISTOR 进步党硅平面功率晶体 25.000W Medium Power PNP Plastic Leaded Transistor. 50V vceo, 5.000A Ic, 120 - 240 hfe. Complementary CFC2562Y
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File Size |
135.13K /
3 Page |
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it Online |
Download Datasheet
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Price and Availability
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