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  9a. Datasheet PDF File

For 9a. Found Datasheets File :: 5943    Search Time::5.594ms    
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    TY Semiconductor Co., Ltd
Part No. KI4953DY
OCR Text ...=-10v -20 a v gs =-10v,i d = -4.9a 0.043 0.053 v gs =-4.5v,i d = -3.6a 0.070 0.095 forward transconductance* g fs v ds =-15v,i d = -4.9a 10 s schottky diode forward voltage* v sd i s =-1.7a,v gs = 0 v 0.8 -1.2 v total gate charge q g 16 25 ...
Description 100per Rg Tested Drain-Source Voltage Vds -30V Gate-Source Voltage Vgs -20V

File Size 187.79K  /  2 Page

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    FDPF3860T

Fairchild Semiconductor
Part No. FDPF3860T
OCR Text ...esistance v gs = 10v, i d = 5.9a - 29.1 38.2 m g fs forward transconductance v ds = 10v, i d = 5.9a - 21 - s c iss input capacitance v ds = 25v, v gs = 0v f = 1mhz - 1350 1800 pf c oss output capacitance - 145 1...
Description N-Channel PowerTrenchMOSFET 100V, 20A, 38.2m

File Size 329.25K  /  8 Page

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    ZXMD65P02N8 ZXMD65P02N8TA ZXMD65P02N8TC

ZETEX[Zetex Semiconductors]
Part No. ZXMD65P02N8 ZXMD65P02N8TA ZXMD65P02N8TC
OCR Text ... 0.95 V ns nC T j =25C, I S =-2.9A, V GS =0V T j =25C, I F =-2.9A, di/dt= 100A/s t d(on) tr t d(off) tf Qg Q gs Q gd 6.6 29.9 57.9 63.2 20 1.8 10 ns ns ns ns nC nC nC V DS =-10V,V GS =-4.5V I D =-2.9A V DD =-10V, I D =-2.9A R G =6.0, V GS =...
Description DUAL 20V P-CHANNEL ENHANCEMENT MODE MOSFET

File Size 64.09K  /  4 Page

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    ZXMD65P03N8 ZXMD65P03N8TA ZXMD65P03N8TC

ZETEX[Zetex Semiconductors]
Part No. ZXMD65P03N8 ZXMD65P03N8TA ZXMD65P03N8TC
OCR Text ...nC V DS =-15V,V GS =-5V I D =-4.9A V DD =-15V, I D =-4.9A R G =6.0, V GS =-10V C iss C oss C rss 930 311 113 pF pF pF V DS =-25 V, V GS =0V, f=1MHz V (BR)DSS I DSS I GSS V GS(th) R DS(on) g fs 8.8 -1.0 0.055 0.080 -30 -1 -100 V A nA V S I...
Description DUAL 30V P-CHANNEL ENHANCEMENT MODE MOSFET

File Size 64.18K  /  4 Page

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    MTNN8452KQ8

Cystech Electonics Corp.
Part No. MTNN8452KQ8
OCR Text ... c - 11 15 v gs =10v, i d =9a *r ds(on) - 18 23 m v gs =4.5v, i d =7a *g fs - 9 - s v ds =5v, i d =5a dynamic ciss - 1090 - coss - 149 - crss - 105 - pf v ds =15v, v gs =0, f=1mhz *td (on) - 5.8 - *...
Description Asymmetric Dual N-Channel Enhancement Mode MOSFET

File Size 295.07K  /  10 Page

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    MTNN8451KQ8

Cystech Electonics Corp.
Part No. MTNN8451KQ8
OCR Text ... c - 11 15 v gs =10v, i d =9a *r ds(on) - 18 23 m v gs =4.5v, i d =7a *g fs - 9 - s v ds =5v, i d =5a dynamic ciss - 1090 - coss - 149 - crss - 105 - pf v ds =15v, v gs =0, f=1mhz *td (on) - 5.8 - *...
Description Asymmetric Dual N-Channel Enhancement Mode MOSFET

File Size 297.85K  /  10 Page

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    FDZ203N

Fairchild Semiconductor
Part No. FDZ203N
OCR Text ...iode Reverse Recovery Time IF = 9A, Diode Reverse Recovery Charge diF/dt = 100 A/s (Note 2) 0.7 20 14 1.3 1.2 Notes: 1. RJA is determined with the device mounted on a 1 in 2 oz. copper pad on a 1.5 x 1.5 in. board of FR-4 material...
Description N-Channel 2.5V Specified PowerTrench BGA MOSFET

File Size 204.88K  /  6 Page

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    FQP9N50C FQPF9N50C FQPF9N50CT

FAIRCHILD[Fairchild Semiconductor]
Part No. FQP9N50C FQPF9N50C FQPF9N50CT
OCR Text ... temperature 2. L = 8 mH, IAS = 9A, VDD = 50V, RG = 25 , Starting TJ = 25C 3. ISD 9A, di/dt 200A/s, VDD BVDSS, Starting TJ = 25C 4. Pulse Test : Pulse width 300s, Duty cycle 2% 5. Essentially independent of operating temperature (c)...
Description 500V N-Channel MOSFET
500V N-Channel Advance Q-FET C-Series

File Size 842.91K  /  10 Page

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