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bit 1mx16 Datasheet PDF File

For bit 1mx16 Found Datasheets File :: 205 Search Time::2.343ms
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				MCNIX[Macronix International]
Part No.	MX26LV160 MX26LV160TXEC-70G MX26LV160BMC-55 MX26LV160BMC-55G MX26LV160BMC-70 MX26LV160BMC-70G MX26LV160BTC-55 MX26LV160BTC-55G MX26LV160BTC-70 MX26LV160BTC-70G MX26LV160BXBC-55 MX26LV160BXBC-55G MX26LV160BXBC-70 MX26LV160BXBC-70G MX26LV160BXEC-55 MX26LV160BXEC-55G MX26LV160BXEC-70 MX26LV160BXEC-70G MX26LV160TMC-55 MX26LV160TMC-55G MX26LV160TMC-70 MX26LV160TMC-70G MX26LV160TTC-55G MX26LV160TTC-70 MX26LV160TTC-70G MX26LV160TXBC-55 MX26LV160TXBC-55G MX26LV160TXBC-70 MX26LV160TXBC-70G MX26LV160TXEC-55 MX26LV160TXEC-55G MX26LV160TXEC-70
OCR Text	bit [2Mx8/1mx16] CMOS SINGLE VOLTAGE 3V ONLY BOOT SECTOR HIGH SPEED eLiteFlashTM MEMORY FEATURES * Extended single - supply voltage range 3.0V to 3.6V * 2,097,152 x 8 / 1,048,576 x 16 switchable * Single power supply operation - 3.0V only...
Description	16M-bit [2Mx8/1mx16] CMOS SINGLE VOLTAGE 3V ONLY BOOT SECTOR HIGH SPEED eLiteFlashTM MEMORY
File Size	697.80K / 48 Page	View it Online	Download Datasheet

				SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor]
Part No.	KMM5361205C2WG KMM5361205C2W
OCR Text	...n SOJ package and one CMOS 1Mx4 bit Quad CAS with EDO DRAM in 24-pin SOJ package mounted on a 72-pin glassepoxy substrate. A 0.1 or 0.22uF d...1mx16 EDO DRAM and 1Mx4 Quad CAS with EDO DRAM, TSOP DRAM Part No. : KMM5361205C2W/C2WG -- KM416C120...
Description	1M x 36 DRAM SIMM using 1mx16 and 4M Quad CAS EDO, 1K Refresh
File Size	281.12K / 17 Page	View it Online	Download Datasheet

				Samsung Semiconductor
Part No.	KMM5361205C2W
OCR Text	...n SOJ package and one CMOS 1Mx4 bit Quad CAS with EDO DRAM in 24-pin SOJ package mounted on a 72-pin glassepoxy substrate. A 0.1 or 0.22uF d...1mx16 EDO DRAM and 1Mx4 Quad CAS with EDO DRAM, TSOP DRAM Part No. : KMM5361205C2W/C2WG -- KM416C120...
Description	1MBx36 DRAM Simm Using 1MBx16 And 4MB Quad Cas Edo
File Size	277.25K / 17 Page	View it Online	Download Datasheet

				SAMSUNG[Samsung semiconductor]
Part No.	KM416C1004C-5 KM416C1004C-L45 KM416C1004C-L5 KM416C1204C-5 KM416C1204C-6 KM416C1204C-L45 KM416C1204C-L5 KM416C1204C-L6 KM416C1204C KM416C1004C-45 KM416C1004C-6 KM416C1004C-L6 KM416C1204C-45 KM416V1004C KM416C10CJ-L45 KM416C10CJ-L5 KM416C10CJ-L6 KM416C10CT-L45 KM416C10CT-L5 KM416C12CJ-L45 KM416C12CJ-L5 KM416C12CJ-L6 KM416C12CT-L45 KM416C12CT-L5 KM416C12CT-L6 KM416V1204C KM416C10CT-L6 KM416V12CT-L6 KM416C1004C KM416V1004C-45 KM416V1004C-5 KM416V1004C-6 KM416V1004C-L45 KM416V1004C-L5 KM416V1004C-L6 KM416V10CJ-L45 KM416V10CJ-L5 KM416V10CJ-L6 KM416V10CT-L45 KM416V10CT-L5 KM416V10CT-L6 KM416V1204C-45 KM416V1204C-5 KM416V1204C-6 KM416V1204C-L45 KM416V1204C-L5 KM416V1204C-L6 KM416V12CJ-L45 KM416V12CJ-L5 KM416V12CJ-L6 KM416V12CT-L45 KM416V12CT-L5
OCR Text	...s is a family of 1,048,576 x 16 bit Extended Data Out CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells wit...1mx16 EDO Mode DRAM family is fabricated using Samsung s advanced CMOS process to realize high band-...
Description	1M X 16bit CMOS DYNAMIC RAM WITH EXTENDED DATA OUT
File Size	803.85K / 35 Page	View it Online	Download Datasheet

				MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No.	M5M4V16169DTP-10 M5M4V16169DTP-7 M5M4V16169DTP-8 M5M4V16169DTP-15 M5M4V16169DTP M5M4V16169DRT-10 M5M4V16169DRT-15 M5M4V16169DRT-7 M5M4V16169DRT-8
OCR Text	bit) CACHED DRAM WITH 16K (1024-WORD BY 16-bit) SRAM Preliminary This document is a preliminary Target Spec. and some of the contents are ...1mx16 Ad3-7 1 of 32 Decode 8X16 Block DRAM Row Decoder 8X16 8X16 Ad0-11 1 of 4096 Decode ...
Description	16MCDRAM:16M(1M-WORD BY 16-bit) CACHED DRAM WITH 16K (1024-WORD BY 16-bit) SRAM
File Size	726.41K / 64 Page	View it Online	Download Datasheet

				WEDC[White Electronic Designs Corporation]
Part No.	W7G21M32SVX120BNI W7G21M32SVX90BNC W7G21M32SVX90BNI W7G21M32SVX70BNC W7G21M32SVX70BNI W7G21M32SVX120BNC W7G21M32SVX-BN W7G1M32SVB120BNC W7G1M32SVB120BNI W7G1M32SVB70BNC W7G1M32SVB70BNI W7G1M32SVB90BNC W7G1M32SVB90BNI W7G1M32SVT120BNC W7G1M32SVT120BNI W7G1M32SVT70BNC W7G1M32SVT70BNI W7G1M32SVT90BNC W7G1M32SVT90BNI W7G1M32SVX-BN W7G21M32SVB120BNC W7G21M32SVB120BNI W7G21M32SVB70BNC W7G21M32SVB70BNI W7G21M32SVB90BNC W7G21M32SVB90BNI W7G21M32SVT120BNC W7G21M32SVT120BNI W7G21M32SVT70BNC W7G21M32SVT70BNI W7G21M32SVT90BNC W7G21M32SVT90BNI
OCR Text	...address Data Polling and Toggle bit feature for detection of program or erase cycle completion Low Power Dissipation * 30mA per Device Activ...1mx16 WE# DQ0-15 CE# CE# Addr 0-19 W7G21M32SVx-BN: 2x1Mx32 80 PIN SIMM WE2# 1mx16 WE# DQ0-15 CE...
Description	8MB/4MB (2x1Mx32 / 1Mx32) CMOS, Boot Sector Flash Memory Module
File Size	133.60K / 10 Page	View it Online	Download Datasheet

				WEDC[White Electronic Designs Corporation]
Part No.	W7MG1M32SVX90BNI W7MG1M32SVX70BNI W7MG1M32SVX-BN W7MG1M32SVX90BNC W7MG1M32SVX70BNC W7MG1M32SVX120BNC W7MG1M32SVX120BNI W7MG21M32SVX90BNI W7MG1M32SVB120BNC W7MG1M32SVB120BNI W7MG1M32SVB70BNC W7MG1M32SVB70BNI W7MG1M32SVB90BNC W7MG1M32SVB90BNI W7MG1M32SVT120BNC W7MG1M32SVT120BNI W7MG1M32SVT70BNC W7MG1M32SVT70BNI W7MG1M32SVT90BNC W7MG21M32SVB120BNC W7MG21M32SVB120BNI W7MG21M32SVB70BNC W7MG21M32SVB70BNI W7MG21M32SVB90BNC W7MG21M32SVB90BNI W7MG21M32SVT120BNC W7MG21M32SVT120BNI W7MG21M32SVT70BNC W7MG21M32SVT70BNI W7MG21M32SVT90BNC W7MG21M32SVT90BNI W7MG21M32SVX120BNC W7MG21M32SVX120BNI W7MG21M32SVX70BNC W7MG21M32SVX70BNI W7MG21M32SVX90BNC W7MG21M32SVX-BN
OCR Text	...address Data Polling and Toggle bit feature for detection of program or erase cycle completion Low Power Dissipation * 30mA per Device Activ...1mx16 WE# DQ0-15 CE# CE# Addr 0-19 W7MG21M32SVx-BN: 2x1Mx32 80 PIN SIMM WE2# 1mx16 WE# DQ0-15 C...
Description	8MB/4MB (2x1Mx32 / 1Mx32) MirrorbitTM 3.0V, Boot Sector Flash Memory Module
File Size	133.97K / 10 Page	View it Online	Download Datasheet

				Hynix Semiconductor TT electronics Semelab, Ltd.
Part No.	HY5V66GF HY5V66GF-H HY5V66GF-P
OCR Text	bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY5V66GF i...1mx16 Bank 3 Row Pre Decoders 1mx16 Bank 2 X decoders 1mx16 Bank 1 X decoders 1mx16 Bank 0 X decoder...
Description	SDRAM - 64Mb 4 Banks x 1M x 16bit Synchronous DRAM 4Mx16\|3.3V\|4K\|H\|SDR SDRAM - 64M x16 SDRAM x16内存
File Size	197.21K / 11 Page	View it Online	Download Datasheet

				Hynix Semiconductor
Part No.	HY67V161610D HY67V161610DTC HY67V161610DTC-10 HY67V161610DTC-5 HY67V161610DTC-55 HY67V161610DTC-6 HY67V161610DTC-7 HY67V161610DTC-8
OCR Text	bit Synchronous DRAM D E S C R IP T IO N THE Hyundai HY57V161610D is a 16,777,216-bits CMOS Synchronous DRAM, ideally suited for the mai...1mx16 Synchronous DRAM Self Refresh Counter Row Addr. Latch/ Predecoder Refresh Refresh ...
Description	2 Banks x 512K x 16 bit Synchronous DRAM
File Size	71.95K / 11 Page	View it Online	Download Datasheet

				Samsung Semiconductor Co., Ltd. SAMSUNG[Samsung semiconductor] Samsung Electronic
Part No.	KM416C1200B KM416V1000B KM416V1200B KM416C1000B SAMSUNGSEMICONDUCTORCO.LTD.-KM416C1200B
OCR Text	...s is a family of 1,048,576 x 16 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the sam...1mx16 Fast Page Mode DRAM family is fabricated using Samsung's advanced CMOS process to realize high...
Description	1M x 16bit CMOS Dynamic RAM with Fast Page Mode 100万16的CMOS动态随机存储器的快速页面模
File Size	84.33K / 8 Page	View it Online	Download Datasheet

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