bit [2Mx8/1mx16] CMOS SINGLE VOLTAGE 3V ONLY BOOT SECTOR HIGH SPEED eLiteFlashTM MEMORY
FEATURES
* Extended single - supply voltage range 3.0V to 3.6V * 2,097,152 x 8 / 1,048,576 x 16 switchable * Single power supply operation - 3.0V only...
Description
16M-bit [2Mx8/1mx16] CMOS SINGLE VOLTAGE 3V ONLY BOOT SECTOR HIGH SPEED eLiteFlashTM MEMORY
...n SOJ package and one CMOS 1Mx4 bit Quad CAS with EDO DRAM in 24-pin SOJ package mounted on a 72-pin glassepoxy substrate. A 0.1 or 0.22uF d...1mx16 EDO DRAM and 1Mx4 Quad CAS with EDO DRAM, TSOP DRAM Part No. : KMM5361205C2W/C2WG -- KM416C120...
Description
1M x 36 DRAM SIMM using 1mx16 and 4M Quad CAS EDO, 1K Refresh
...n SOJ package and one CMOS 1Mx4 bit Quad CAS with EDO DRAM in 24-pin SOJ package mounted on a 72-pin glassepoxy substrate. A 0.1 or 0.22uF d...1mx16 EDO DRAM and 1Mx4 Quad CAS with EDO DRAM, TSOP DRAM Part No. : KMM5361205C2W/C2WG -- KM416C120...
Description
1MBx36 DRAM Simm Using 1MBx16 And 4MB Quad Cas Edo
...s is a family of 1,048,576 x 16 bit Extended Data Out CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells wit...1mx16 EDO Mode DRAM family is fabricated using Samsung s advanced CMOS process to realize high band-...
Description
1M X 16bit CMOS DYNAMIC RAM WITH EXTENDED DATA OUT
bit) CACHED DRAM WITH 16K (1024-WORD BY 16-bit) SRAM
Preliminary
This document is a preliminary Target Spec. and some of the contents are ...1mx16
Ad3-7 1 of 32 Decode 8X16 Block
DRAM Row Decoder 8X16
8X16
Ad0-11 1 of 4096 Decode
...
Description
16MCDRAM:16M(1M-WORD BY 16-bit) CACHED DRAM WITH 16K (1024-WORD BY 16-bit) SRAM
...address Data Polling and Toggle bit feature for detection of program or erase cycle completion Low Power Dissipation * 30mA per Device Activ...1mx16 WE# DQ0-15 CE# CE# Addr 0-19
W7G21M32SVx-BN: 2x1Mx32 80 PIN SIMM
WE2#
1mx16 WE# DQ0-15 CE...
...address Data Polling and Toggle bit feature for detection of program or erase cycle completion Low Power Dissipation * 30mA per Device Activ...1mx16 WE# DQ0-15 CE# CE# Addr 0-19
W7MG21M32SVx-BN: 2x1Mx32 80 PIN SIMM
WE2#
1mx16 WE# DQ0-15 C...
bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY5V66GF i...1mx16 Bank 3 Row Pre Decoders 1mx16 Bank 2 X decoders 1mx16 Bank 1 X decoders 1mx16 Bank 0 X decoder...
Description
SDRAM - 64Mb 4 Banks x 1M x 16bit Synchronous DRAM 4Mx16|3.3V|4K|H|SDR SDRAM - 64M x16 SDRAM x16内存
bit Synchronous DRAM
D E S C R IP T IO N
THE Hyundai HY57V161610D is a 16,777,216-bits CMOS Synchronous DRAM, ideally suited for the mai...1mx16 Synchronous DRAM
Self Refresh Counter
Row Addr. Latch/ Predecoder
Refresh
Refresh
...
...s is a family of 1,048,576 x 16 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the sam...1mx16 Fast Page Mode DRAM family is fabricated using Samsung's advanced CMOS process to realize high...
Description
1M x 16bit CMOS Dynamic RAM with Fast Page Mode 100万16的CMOS动态随机存储器的快速页面模