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United Monolithic Semiconductors GmbH
UMS[United Monolithic Semiconductors]
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| Part No. |
CHA2291-99F_00 CHA2291 CHA2291-99F/00
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| OCR Text |
...side of the chip is both RF and DC grounded. This helps simplify the assembly process. The circuit is manufactured with a PM-HEMT process, 0...20GHz
14GHz 18GHz
-1,2
-1
-0,8
-0,6
-0,4
-0,2
0 Vc (V)
0,2
0,4
0,6
... |
| Description |
10-18GHz Low Noise, Variable Gain Amplifier 10 - 18GHz低噪声，可变增益放大
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| File Size |
134.80K /
6 Page |
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it Online |
Download Datasheet
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UMS[United Monolithic Semiconductors]
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| Part No. |
CHA2292-99F_00 CHA2292 CHA2292-99F/00
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| OCR Text |
...side of the chip is both RF and DC grounded. This helps simplify the assembly process. The circuit is manufactured with a PM-HEMT process, 0...20GHz
-30
-25
-20 Input power (dBm)
-15
-10
Gain & Output power @ 18-20 GHz
Ref. ... |
| Description |
KJA 79C 79#22D PIN PLUG
17-24GHz Low Noise, Variable Gain Amplifier
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| File Size |
135.23K /
6 Page |
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it Online |
Download Datasheet |
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http://
UMS[United Monolithic Semiconductors]
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| Part No. |
CHA3063-99F_00 CHA3063 CHA3063-99F/00
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| OCR Text |
...side of the chip is both RF and DC grounds.This helps simplify the assembly process. The circuit is manufactured with a PMHEMT process : 0.2...20GHz 25
500 450 Pout (dBm) / Gain (dB) / PAE (%)
20
Gain
400 350 300 250 Pout 200 150 Id Id... |
| Description |
5.5-23GHz Driver Amplifier
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| File Size |
153.05K /
7 Page |
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it Online |
Download Datasheet |
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UMS[United Monolithic Semiconductors]
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| Part No. |
CHA5293A-99F_00 CHA5293A CHA5293A-99F/00
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| OCR Text |
...side of the chip is both RF and DC grounds. This helps simplify the assembly process. The circuit is manufactured with a PM-HEMT process, 0....20GHz
900 800
Output power versus frequency & Drain current @ 20GHz
Ref. : DSCHA52932123 -03-... |
| Description |
17-24GHz High Power Amplifier
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| File Size |
147.96K /
7 Page |
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it Online |
Download Datasheet |
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EUDYNA[Eudyna Devices Inc]
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| Part No. |
F0100604B
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| OCR Text |
...N=-20dBm RL=50 f=1GHz *1 f=1GHz DC DC -
Units
Supply Current
DC
mA
S21 FC RI ZT VO VI
dB GHz V V
*1 ZT=
10 Gb/s Tr...20GHz IN
VDD
VSS
OUT DUT
Prober
2) Sensitivity Characteristics
VPD
5V 0.022F
... |
| Description |
10 Gb/s Receiver Transimpedance Amplifier
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| File Size |
1,026.01K /
9 Page |
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it Online |
Download Datasheet |
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EUDYNA[Eudyna Devices Inc]
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| Part No. |
FMM5822X
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| OCR Text |
...ut Power at 1dB G.C.P. P1dB IDD(DC)=850mA typ. 30.5 32.5 dBm Power Gain at 1dB G.C.P. G1dB Zs=Zl=50ohm 19 21 25 dB Power Added Efficiency at...20GHz 1400 1300 1200 1100 1000 900 800 700 -4 -2 0 2 4 6 8 10 12 14 16 Input Power [dBm]
Pin = 8d... |
| Description |
K-Band Power Amplifier MMIC
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| File Size |
295.63K /
14 Page |
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it Online |
Download Datasheet |
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Filtronic Compound Semi...
FILTRONIC[Filtronic Compound Semiconductors]
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| Part No. |
LMA208C
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| OCR Text |
...cal 2-26GHz Frequency Bandwidth DC Decoupled RF Input and Output Chip Size : 1.986mmX1.082mm (.078"X.043") Chip Thickness : 100m 2 Pad Dimen...20GHz) Small Signal Gain (20-26GHz) Drain Current at Saturation Small Signal Gain Flatness Input Ret... |
| Description |
2-26 GHz PHEMT Amplifier
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| File Size |
95.96K /
3 Page |
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it Online |
Download Datasheet |
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Price and Availability
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