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				Microsemi Corporation
Part No.	APT12F60K
OCR Text	...s and (millimeters) source gate drai n drai n 1ms 100ms r ds(on) 0.5 single pulse 0.1 0.3 0.7 0.05 d = 0.9 scaling for different case & junction temperatures: i d = i d(t c = 25 c) *( t j - t c )/125 peak t j = p dm x z jc + t...
Description	N-Channel FREDFET
File Size	210.91K / 4 Page	View it Online	Download Datasheet

				Mitsubishi Electric Semiconductor
Part No.	MGFC47B3538B
OCR Text	...ter ratings unit vgdo gate to drai n voltage -15 v vgso gate to source voltage -10 v maxid maxi mum drai n current 12 a pt *1 total power dissipation 115 w tch channel temperature 175 deg.c tstg storage temperature -55 / +150 ...
Description	C band Internally Matched Power GaAs FET
File Size	141.10K / 4 Page	View it Online	Download Datasheet

				Fairchild Semiconductor
Part No.	HUF76633P312
OCR Text	.... . . . . . . . . . i d pul sed drai n current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . i dm 38 39 27 27 f igure 4 a a a a pu lsed avalanche rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . uis fig...
Description	38A, 100V, 0.036 Ohm, N-Channel, Logic Level UltraFET? Power MOSFET
File Size	406.63K / 10 Page	View it Online	Download Datasheet

				Shenzhen Winsemi Microelectronics Co., Ltd
Part No.	WFF640
OCR Text	...ds = 200 v, vgs = 0 v - - 10 a drai n ? source breakd o w n voltage v (br)dss id = 250 a, vgs = 0 v 200 - - v gate threshold voltage v gs(th) vds = 10 v, i d =250 a 2 - 4 v drai n ? source on resistance r ds(on) vgs = 10 v, id = 9a - - 0...
Description	Silicon N-Channel MOSFET
File Size	457.29K / 7 Page	View it Online	Download Datasheet

				Shenzhen Winsemi Microelectronics Co., Ltd
Part No.	WFF12N60
OCR Text	... ds = 600 v, vgs = 0 v - - 1 a drai n ? source breakdo w n voltage v (br) d ss i d = 250 a, vgs = 0 v 6 00 - - v break voltage temperature coefficient bv dss / t j i d =25 0 a, referenced to 25 - 0.5 - v/ gate threshold voltage v gs(...
Description	Silicon N-Channel MOSFET
File Size	458.24K / 7 Page	View it Online	Download Datasheet

				UNISONIC TECHNOLOGIES
Part No.	7N60K
OCR Text	... 1.4 v maximum co ntinuo us drai n-s ource di od e fo rw ard c u rren t i s 7.4 a maximum puls ed drai n-so urc e diod e fo rw ard cu rren t i sm 29.6 a reverse recover y t i me t r r v gs = 0 v , i s = 7...
Description	7.4A 600V N-CHANNEL POWER MOSFET
File Size	358.74K / 6 Page	View it Online	Download Datasheet

				UNISONIC TECHNOLOGIES
Part No.	4N60K
OCR Text	... 1.4 v maximum co ntinuo us drai n-s ource di od e fo rw ard c u rren t i s 4.4 a maximum puls ed drai n-so urc e diod e fo rw ard c u rren t i sm 17.6 a reverse recover y time t r r v gs = 0 v , i s = 4....
Description	40A 600V N-CHANNEL POWER MOSFET
File Size	475.58K / 9 Page	View it Online	Download Datasheet

				UNISONIC TECHNOLOGIES
Part No.	10N60Z
OCR Text	... 1.4 v maximum co ntinuo us drai n-s ource di od e fo rw ard c u rren t i s 10 a maximum puls ed drai n-so urc e diod e fo rw ard c u rren t i sm 38 a reverse recovery time t r r v gs =0 v, i s =1 0 a , di f /...
Description	10A 600V N-CHANNEL POWER MOSFET
File Size	513.65K / 8 Page	View it Online	Download Datasheet

				UNISONIC TECHNOLOGIES
Part No.	7N65K
OCR Text	... 1.4 v maximum co ntinuo us drai n-s ource di od e fo rw ard c u rren t i s 7.4 a maximum puls ed drai n-so urc e diod e fo rw ard c u rren t i sm 29.6 a reverse recover y time t r r v gs = 0 v , i s = 7...
Description	7.4A 650V N-CHANNEL POWER MOSFET
File Size	293.03K / 6 Page	View it Online	Download Datasheet

				MPS
Part No.	MP6910
OCR Text	...io n s min t y p max units drai n-to -sou rce bre a kdo w n voltage v (br)ds s 100 110 v v dd voltage ran ge 8 24 v v dd uvlo ri sing 5.0 6.0 7.0 v v dd uvlo hystere s i s 0.8 1.2 1.5 v operating...
Description	Fast Turn-off Intelligent Rectifier
File Size	285.27K / 10 Page	View it Online	Download Datasheet

For drai Found Datasheets File :: 335 Search Time::1.875ms
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