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Microsemi, Corp.
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| Part No. |
JANTX2N6766
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| OCR Text |
...60v, t j = +125c i dss1 i dss2 i dss3 25 1.0 0.25 adc madc madc static drain-source on -state resistance v gs = 10v, i d2 = 19a pulsed v gs = 10v, i d1 = 30a pulsed t j = +125c v gs = 10v, i d2 = 24a pulsed ... |
| Description |
N Channel MOSFET; Package: TO-204AE; ID (A): 30; PD (W): 150; BVDSS (V): 200; Rq: 0.83; 30 A, 200 V, 0.065 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AE
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| File Size |
236.95K /
5 Page |
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it Online |
Download Datasheet
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Linear Integrated System, Inc
LINEAR INTEGRATED SYSTEMS INC
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| Part No. |
LSK389-A-71 LSK389-C-71
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| OCR Text |
...20 mv v ds = 10v, i d = 1ma dss2 dss1 i i gate to source saturation current ratio 0.9 - v ds = 10v, v gs = 0v electrical characteristics @ 25 c (unless otherwise stated) symbol characteristic min typ max units conditions... |
| Description |
ULTRA LOW NOISE MONOLITHIC DUAL N-CHANNEL JFET 40 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, JFET, TO-71
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| File Size |
109.00K /
2 Page |
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it Online |
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Microsemi, Corp.
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| Part No. |
JANTX2N7228U
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| OCR Text |
...00v, t j = +125c i dss1 i dss2 25 0.25 adc madc static drain-source on-state resistance v gs = 10v, i d = 8.0a pulsed v gs = 10v, i d = 12.0a pulsed t j = +125c v gs = 10v, i d = 8.0a pulsed r ds(on)1 r d... |
| Description |
N Channel MOSFET; 12 A, 500 V, 0.515 ohm, N-CHANNEL, Si, POWER, MOSFET
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| File Size |
93.30K /
2 Page |
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it Online |
Download Datasheet |
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