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Kersemi Electronic Co., Ltd.
Kersemi Electronic Co.,...
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| Part No. |
SIHF630-E3 IRF630
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| OCR Text |
...ead (pb)-free irf630pbf sihf630-e3 snpb irf630 sihf630 absolute maximum ratings (t c = 25 c, unless otherwise noted) parameter symbol lim...1200 800 0 400 10 0 10 1 capacitance (pf) v ds , drain-to-source voltage (v) c iss c rss c oss v gs... |
| Description |
Power MOSFET Dynamic dV/dt Rating Repetitive Avalanche Rated
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| File Size |
5,953.91K /
8 Page |
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it Online |
Download Datasheet
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Vishay Intertechnology,Inc.
Vishay Intertechnology, Inc.
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| Part No. |
SI3469DV-T1-E3
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| OCR Text |
...ering information: si3469dv-t1?e3 (lead free) absolute maximum ratings (t a = 25 c unless otherwise noted) parameter symbol 5 secs stead...1200 1500 048121620 0.6 0.8 1.0 1.2 1.4 1.6 ? 50 ? 25 0 25 50 75 100 125 150 0 2 4 6 8 10 048121620 ... |
| Description |
P-Channel 20-V (D-S) MOSFET, Low-Threshold P通道20 - V（下局副局长）MOSFET的低阈
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| File Size |
95.14K /
6 Page |
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it Online |
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Vishay Intertechnology,Inc.
VISAY[Vishay Siliconix]
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| Part No. |
SUD50N02-09P-E3 50N02-09 SUD50N02-09P
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| OCR Text |
...ion: SUD50N02-09P SUD50N02-09P--E3 (Lead Free)
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Volta...1200
V GS - Gate-to-Source Voltage (V)
8
6
800 Coss 400 Crss 0 0 4 8 12 16 20 VDS - Drai... |
| Description |
N-Channel 20-V (D-S) 175 Degree Celcious MOSFET
N-Channel MOSFET
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| File Size |
48.81K /
4 Page |
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it Online |
Download Datasheet |
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VISAY[Vishay Siliconix]
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| Part No. |
SI7421DN-T1-E3 SI7421DN SI742DN
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| OCR Text |
...ering Information: Si7421DN-T1--E3
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage Gate-Sour...1200
800
400 Crss 0 0 5 10
Coss
15
20
25
30
ID - Drain Current (A)
VDS - ... |
| Description |
P-Channel 30-V (D-S) MOSFET
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| File Size |
66.86K /
5 Page |
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it Online |
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VAISH[Vaishali Semiconductor]
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| Part No. |
SI6866DQ-T1-E3 SI6866DQ SI6866DQ-T1
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| OCR Text |
...ation: Si6866DQ-T1 Si6866DQ-T1--E3 (Lead (Pb)-Free)
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source ...1200
Capacitance
0.08
0.06 VGS = 2.5 V 0.04 VGS = 4.5 V 0.02
800
400
Coss
Crss ... |
| Description |
Dual N-Channel 2.5-V (G-S) MOSFET
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| File Size |
80.00K /
5 Page |
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it Online |
Download Datasheet |
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Vishay Intertechnology,Inc.
VISAY[Vishay Siliconix]
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| Part No. |
SUD50N024-09P-E3 SUD50N024-09P
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| OCR Text |
...n: SUD50N024-09P SUD50N024-09P--E3 (Lead Free) N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
D...1200
V GS - Gate-to-Source Voltage (V)
8
6
800 Coss 400 Crss 0 0 4 8 12 16 20 VDS - Drai... |
| Description |
P-Channel MOSFET
N-Channel 22-V (D-S) 175C MOSFET
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| File Size |
49.02K /
4 Page |
View
it Online |
Download Datasheet |
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