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    FRW336

TEMEX
Part No. FRW336
OCR Text ...y Temperature Coefficient (FTC) frequenc y Aging Absolute Value during the first Year |f A| DC Insulation Resistance Between any Two Pins RF Equivalent RLC Model Motional Resistance (RM) Motional Inductance (LM) Motional Capacitance (CM) Sh...
Description SAW Resonator - Remote Control

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    FRW338

TEMEX
Part No. FRW338
OCR Text ...y Temperature Coefficient (FTC) frequenc y Aging Absolute Value during the first Year |f A| DC Insulation Resistance Between any Two Pins RF Equivalent RLC Model Motional Resistance (RM) Motional Inductance (LM) Motional Capacitance (CM) Sh...
Description SAW Resonator - Remote Control

File Size 286.95K  /  5 Page

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    KA3842 KA3843 KA3844 KA3845

Estek Electronics Co. Ltd
Part No. KA3842 KA3843 KA3844 KA3845
OCR Text ...Output Dead-Time vs. Oscillator frequenc . y (dB) 90 80 VCC = 15 V VO = 2V to 4V 100K R = L O 25 C 80 60 70 40 60 V = CC 15 V 3.3nF = 25 20 50 T 0 40 1 2 3 5 -20 Figure 3. Maximum Output D...
Description fixed frequency current mode PWM controller

File Size 317.42K  /  7 Page

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    6MBP50RJ120

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ETC
Fuji Electric
Part No. 6MBP50RJ120
OCR Text ...3 14 15 16 17 18 Sw itc hing frequenc y : fs w (kHz) Po we r s up ply volta ge : Vc c ( V) U nder voltage vs. Junction temperature 14 1 U nde r voltage hysterisis vs. Jnction tempe ra tur e 12 Un der vo ltage hysterisis : V...
Description IGBT IPM R-series 1200V class 1200V / 50A 6 in one-package

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    40TPS16PBF

International Rectifier, Corp.
Part No. 40TPS16PBF
OCR Text ... (2) (1) 40T .. PS 0.1 1 frequenc y Limited by PG(AV) 10 100 1000 Instantaneous Gate Current (A) Fig. 8 - GateCharacteristics T ransient T hermal Impeda nc e Z thJC (C/W) 1 0.1 D = 0.50 D = 0.33 D = 0.25 D = 0.17 D = 0.0...
Description PHASE CONTROL SCR Lead-Free 相位控制可控硅无

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    MRF6S18100NR1 MRF6S18100NBR1

Freescale Semiconductor, Inc
Part No. MRF6S18100NR1 MRF6S18100NBR1
OCR Text ... base station applications with frequenc ies from 1800 to 2000 MHz . S u i t a b l e f o r T D M A , C D M A a n d multicarrier amplifier applications. GSM Application * Typical GSM Performance: VDD = 28 Volts, IDQ = 900 mA, Pout = 100 Watt...
Description RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

File Size 693.63K  /  20 Page

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    XP1017-BD-EV1 XP1017-BD-000V XP1017-BD

Mimix Broadband
Part No. XP1017-BD-EV1 XP1017-BD-000V XP1017-BD
OCR Text ... eque nc y, G Hz 34 35 36 37 frequenc y GHz Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099 Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com Page 2 of 6 Characteristic Data and Specifications are subject to ...
Description 30.0-36.0 GHz GaAs MMIC Power Amplifier

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    M63840FP M63840KP M63840P

Mitsubishi Electric Semiconductor
Part No. M63840FP M63840KP M63840P
OCR Text ...current per c irc uit. Repeated frequenc y 10Hz The v alue in the c irc le repres ents the v alue of the s imultaneous ly -operated c irc uit. Ta = 25 -100 -200 The drain c urrent values repres ent the current per c irc uit....
Description 8-Unit 500mA Source Type Darlington Transistor-Array With Clamp Diode

File Size 1,382.30K  /  7 Page

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    CHA7012

United Monolithic Semiconductors
Part No. CHA7012
OCR Text ...wer @ 25 versus compression and frequenc y C 9.2GHz 9.4GHz 9.6GHz 9.8GHz 10GHz 10.2GHz 10.4GHz 50 45 40 35 PAE (%) 30 25 20 15 10 5 0 -1 0 1 2 3 4 5 6 7 8 Compression (dB) PAE @ 25 versus compression and frequency C 9.2GHz 9.4GHz 9.6G...
Description X-band HBT High Power Amplifier

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    CHA7114

United Monolithic Semiconductors
Part No. CHA7114
OCR Text ...wer @ 25 versus compression and frequenc y C 60 50 40 PAE (%) 30 20 10 0 -1 0 1 2 3 4 5 6 Compression (dB) PAE @ 25 versus compression and frequency C 8GHz 8.4GHz 8.8GHz 9.2GHz 9.6GHz 10GHz 10.4GHz 10.8GHz 11.2GHz 11.6GHz 12GHz 7 ...
Description X Band High Power Amplifier

File Size 277.99K  /  8 Page

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