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For gate Found Datasheets File :: 108816 Search Time::1.844ms
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				MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No.	FS7KM-18A FS7KM-18
OCR Text	... 0.25 2.54 0.25 4.5 0.2 q gate w DRAIN e SOURCE 123 2.6 0.2 w VDSS ............................................................................... 900V rDS (ON) (MAX) ............................................................
Description	HIGH-SPEED SWITCHING USE
File Size	41.74K / 4 Page	View it Online	Download Datasheet

				POWEREX[Powerex Power Semiconductors] Fairchild Semiconductor
Part No.	FS7KM-18 FS7M0680TU FS7M0680YDTU FS7KM-18A
OCR Text	... 0.25 2.54 0.25 4.5 0.2 q gate w DRAIN e SOURCE 123 2.6 0.2 w VDSS ............................................................................... 900V rDS (ON) (MAX) ............................................................
Description	Fairchild Power Switch(FPS) Nch POWER MOSFET HIGH-SPEED SWITCHING USE
File Size	46.69K / 4 Page	View it Online	Download Datasheet

				MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No.	FS7KM-5
OCR Text	... 0.25 2.54 0.25 4.5 0.2 q gate w DRAIN e SOURCE 123 2.6 0.2 w VDSS ................................................................................ 250V rDS (ON) (MAX) ...........................................................
Description	HIGH-SPEED SWITCHING USE
File Size	44.05K / 4 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	GA100TS120U
OCR Text	...ent Peak Diode Forward Current gate-to-Emitter Voltage RMS Isolation Voltage, Any Terminal To Case, t = 1 min Maximum Power Dissipation Maximum Power Dissipation Operating Junction Temperature Range Storage Temperature Range Max. 1200 ...
Description	HALF-BRIDGE IGBT INT-A-PAK 1200V UltraFast 10-30 kHz Half-Bridge IGBT in a INT-A-Pak package
File Size	268.82K / 10 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	GA125TS120U
OCR Text	...ent Peak Diode Forward Current gate-to-Emitter Voltage RMS Isolation Voltage, Any Terminal To Case, t = 1 min Maximum Power Dissipation Maximum Power Dissipation Operating Junction Temperature Range Storage Temperature Range Max. 1200 ...
Description	1200V UltraFast 10-30 kHz Half-Bridge IGBT in a INT-A-Pak package HALF-BRIDGE IGBT INT-A-PAK
File Size	220.37K / 10 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	GA50TS120U
OCR Text	...ent Peak Diode Forward Current gate-to-Emitter Voltage RMS Isolation Voltage, Any Terminal To Case, t = 1 min Maximum Power Dissipation Maximum Power Dissipation Operating Junction Temperature Range Storage Temperature Range Max. 1200 ...
Description	HALF-BRIDGE IGBT INT-A-PAK 1200V UltraFast 10-30 kHz Half-Bridge IGBT in a INT-A-Pak package
File Size	208.85K / 10 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	GA75TS120U GA75TS120UPBF
OCR Text	...ent Peak Diode Forward Current gate-to-Emitter Voltage RMS Isolation Voltage, Any Terminal To Case, t = 1 min Maximum Power Dissipation Maximum Power Dissipation Operating Junction Temperature Range Storage Temperature Range Max. 1200 ...
Description	Ultra-FastTM Speed IGBT 1200V UltraFast 10-30 kHz Half-Bridge IGBT in a INT-A-Pak package 75 A, 1200 V, N-CHANNEL IGBT
File Size	255.15K / 10 Page	View it Online	Download Datasheet

				Lattice Semiconductor, Corp. Lattice Semiconductor Corporation LATTICE[Lattice Semiconductor]
Part No.	GAL20V8Z GAL20V8Z-12QJ GAL20V8Z-12QP GAL20V8Z-15QJ GAL20V8Z-15QP GAL20V8ZD-12QJ GAL20V8ZD-12QP GAL20V8ZD-15QJ GAL20V8ZD-15QP
OCR Text	...trically Erasable (E2) floating gate technology. The GAL20V8Z uses Input Transition Detection (ITD) to put the device in standby mode and is capable of emulating the full functionality of the standard GAL20V8. The GAL20V8ZD utilizes a dedic...
Description	Zero Power E2CMOS PLD EE PLD, 15 ns, PDIP24 Zero Power E2CMOS PLD EE PLD, 15 ns, PQCC28
File Size	302.75K / 19 Page	View it Online	Download Datasheet

				LATTICE[Lattice Semiconductor] Lattice Semiconductor Corp
Part No.	GAL20V8 GAL20V8B-10LI GAL20V8B-10LJ GAL20V8B-10LJI GAL20V8B-10LPI GAL20V8B-15LJ GAL20V8B-15LJI GAL20V8B-15LP GAL20V8B-15LPI GAL20V8B-15QJ GAL20V8B-15QP GAL20V8B-20QJI GAL20V8B-20QPI GAL20V8B-25LJ GAL20V8B-25LJI GAL20V8B-25LP GAL20V8B-25LPI GAL20V8B-25QJ GAL20V8B-25QJI GAL20V8B-25QP GAL20V8B-25QPI GAL20V8B-7LI GAL20V8B-7LP GAL20V8C-10LJI GAL20V8C-10LP GAL20V8C-5LJ GAL20V8C-7LJ GAL20V8B-10LP GALB20V8B-10LI GALB20V8B-10LJ GALB20V8B-10LJI GALB20V8B-10LPI GALB20V8B-15LJ GALB20V8B-15LJI GALB20V8B-15LP GALB20V8B-15LPI GALB20V8B-15QJ GALB20V8B-15QP GALB20V8B-20QPI GALB20V8B-25LJI GALB20V8B-25LPI GALB20V8B-25QJI GALB20V8B-25QP GALB20V8B-25QPI GALB20V8B-7LI GALB20V8B-7LP
OCR Text	...trically Erasable (E2) floating gate technology to provide the highest speed performance available in the PLD market. High speed erase times (<100ms) allow the devices to be reprogrammed quickly and efficiently. The generic architecture pro...
Description	SIMPLE-EEPLD,PAL-TYPE,CMOS,DIP,24PIN,PLASTIC High Performance E2CMOS PLD Generic Array Logic
File Size	304.30K / 23 Page	View it Online	Download Datasheet

				Hitachi,Ltd. HITACHI[Hitachi Semiconductor]
Part No.	HM6264BI HM6264BLFPI-10T HM6264BLFPI-12T HM6264BLPI-10 HM6264BLPI-12 HM6264
OCR Text	... time: 10 ns Output load: 1 TTL gate + CL (100 pF) (Including scope & jig) Read Cycle HM6264BI-10 HM6264BI-12 Parameter Read cycle time Address access time Chip select access time CS1 CS2 Output enable to output valid Chip selection to ...
Description	64k SRAM (8-kword x 8-bit) Wide Temperature Range version
File Size	70.58K / 17 Page	View it Online	Download Datasheet

For gate Found Datasheets File :: 108816 Search Time::1.844ms
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