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  high power to-46 for krh-4686b Datasheet PDF File

For high power to-46 for krh-4686b Found Datasheets File :: 150+       Page :: | 1 | 2 | 3 | 4 | 5 | <6> | 7 | 8 | 9 | 10 | 11 | 12 | 13 | 14 | 15 |   

    MJE18002D2-D

ON Semiconductor
Part No. MJE18002D2-D
Description high Speed, high Gain Bipolar NPN power Transistor with Integrated Collector-Emitter Diode and Built-in Efficient Antisaturation Network power TRANSISTORS 2 AMPERES 1000 VOLTS 50 WATTS

File Size 54.31K  /  4 Page

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    BUD44D2-D

ON Semiconductor
Part No. BUD44D2-D
Description high Speed, high Gain Bipolar NPN power Transistor with Integrated Collector-Emitter Diode and Built-in Efficient Antisaturation Network power TRANSISTORS 2 AMPERES 700 VOLTS 25 WATTS

File Size 254.74K  /  12 Page

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    2SJ114

Hitachi Semiconductor
Part No. 2SJ114
Description high SPEED power SWITCHING, high FREQUENCY power AMPLIFIER

File Size 114.79K  /  3 Page

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    RFMD[RF Micro Devices]
Part No. TA0012
Description New high power, high Efficiency HBT GSM power Amplifier

File Size 73.22K  /  4 Page

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    FD1000FH-56

Mitsubishi Electric Semiconductor
Part No. FD1000FH-56
Description 1000 A, 2800 V, SILICON, RECTIFIER DIODE
high power, high FREQUENCY, PRESS PACK TYPE
high power/ high FREQUENCY/ PRESS PACK TYPE

File Size 40.35K  /  3 Page

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    HSMS-2700-BLK HSMS-2700-TR2 HSMS-2702-BLK HSMS-2702-TR2 HSMS-270B-BLK HSMS-2700 HSMS-2700-TR1 HSMS-2702 HSMS-2702-TR1 HS

Agilent (Hewlett-Packard)
Agilent(Hewlett-Packard)
Part No. HSMS-2700-BLK HSMS-2700-TR2 HSMS-2702-BLK HSMS-2702-TR2 HSMS-270B-BLK HSMS-2700 HSMS-2700-TR1 HSMS-2702 HSMS-2702-TR1 HSMS-270B HSMS-270B-TR1 HSMS-270C HSMS-270C-BLK HSMS-270C-TR1 HSMS-270C-TR2 HSMS-270B-TR2
Description HSMS-270C · high power clipping/clamping diode
HSMS-270B · high power clipping/clamping diode
HSMS-2702 · high power clipping/clamping diode
HSMS-2700 · high power clipping/clamping diode
high Performance Schottky Diode for Transient Suppression

File Size 101.86K  /  8 Page

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    AWT6114

Anadigics Inc
ANADIGICS, Inc
Part No. AWT6114
Description The AWT6114 is a high power, high efficiency amplifier module for Korean Band PCS CDMA wireless handset applications.
power Amplifiers
KPCS CDMA 3.4V/28dBm Linear power Amplifier Module

File Size 121.68K  /  8 Page

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    NXP Semiconductors N.V.
Part No. CGD1046HI
Description 1 GHz, 27 dB gain GaAs high output power doubler 40 MHz - 1003 MHz RF/MICROWAVE NARROW BAND high power AMPLIFIER

File Size 78.51K  /  8 Page

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    Vicor, Corp.
VICOR[Vicor Corporation]
Part No. 08-130097-B 08-130097
Description Compant high-Insulation power Relay, Polarized, 10A 外形图式PFC MEGAPAC大功率(2.4KW
OUTLINE DRAWING PFC MEGAPAC high power (2.4KW)

File Size 122.13K  /  2 Page

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    CREE power
Part No. W4NRD0X-0000 W4NRD8C-U000 W4NXD8C-0000 W4NXD8C-L000 W4NXD8D-0000 W4NXD8C-S000 W4NXD8D-S000 W4NXD8G-0000 W6NRE0X-0000 W6NRD0X-0000 W6PXD3O-0000 W6NXD3L-0000 W6NXD0K-0000 W6NXD3K-0000
Description Diameter: 50.8mm; LCW substrates; silicon carbide substrates. for high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; ultra-low mircopipe density; silicon carbide substrates. for high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. for high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; low mircopipe density; silicon carbide substrates. for high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; select mircopipe density; silicon carbide substrates. for high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 76.2mm; LCW type; 6H-silicon carbide. for high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; LCW type; 6H-silicon carbide. for high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. for high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition

File Size 273.34K  /  17 Page

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