|
|
|
NXP Semiconductors N.V.
|
Part No. |
BLF7G22L-250P BLF7G22LS-250P
|
Description |
250 w LDMOS power transistor for base station applications at frequencies from 2110 mhz to 2170 mhz. Power LDMOS transistor BLF7G22L-250P<SOT539A (SOT539A)|<<http://www.nxp.com/packages/SOT539A.html<1<Always Pb-free,;BLF7G22L-250P<SOT539A (SOT539A)|<<http://www.nxp.com/packages/SOT539A.html<1<Always Pb-free,;
|
File Size |
887.79K /
14 Page |
View
it Online |
Download Datasheet |
|
|
|
Freescale (Motorola) MOTOROLA[Motorola, Inc]
|
Part No. |
MRF5S21090LSR3 MRF5S21090L MRF5S21090LR3
|
Description |
2170 mhz, 19 w AVG., 2 x w211;CDMA, 28 V Lateral N211;Channel RF Power MOSFET MRF5S21090L MRF5S21090LR3 MRF5S21090LSR3 2170 mhz, 19 w Avg., 2 x CDMA, 28 V Lateral N-Channel RF Power MOSFETs RF Power Field Effect Transistors
|
File Size |
578.61K /
12 Page |
View
it Online |
Download Datasheet |
|
|
|
Freescale (Motorola) MOTOROLA[Motorola, Inc]
|
Part No. |
MRF5S21100LSR3 MRF5S21100LR3 MRF5S21100L
|
Description |
2170 mhz, 23 w Avg., 2 x w211;CDMA, 28 V Lateral N211;Channel RF Power MOSFET MRF5S21100L, MRF5S21100LR3, MRF5S21100LSR3 2170 mhz, 23 w Avg., 2 x w-CDMA, 28 V Lateral N-Channel RF Power MOSFETs The RF MOSFET Line RF Power Field Effect N-Channel Enhancement-Mode Lateral MOSFETs
|
File Size |
561.39K /
12 Page |
View
it Online |
Download Datasheet |
|
Price and Availability
|