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![FDG6332C FDG6332CNL](Maker_logo/fairchild_semiconductor.GIF)
Fairchild Semiconductor, Corp. FAIRCHILD[Fairchild Semiconductor]
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Part No. |
FDG6332C FDG6332CNL
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OCR Text |
...e.
0.8 RDS(ON), ON-RESISTANCE (OHM)
1.6 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE ID =0.7A VGS = 4.5V 1.4
ID =0.4A
0.6
1.2
TA = 125oC
0.4
1
TA = 25oC
0.2
0.8
0.6 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION T... |
Description |
Tantalum Molded Capacitor; Capacitance: 220uF; Voltage: 6.3V; Packaging: Tape & Reel 700 mA, 20 V, 2 CHANNEL, N AND P-CHANNEL, Si, SMALL SIGNAL, MOSFET 20V N & P-Channel PowerTrench MOSFETs 20V N &P - Channel Power Trench MOSFET
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File Size |
90.23K /
8 Page |
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it Online |
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International Rectifier, Corp.
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Part No. |
CPV363M4F
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OCR Text |
...88 0.90 r , gate resistance (ohm) total switching losses (mj) g v = 480v v = 15v t = 25 c i = 8.7a cc ge j c -60 -40 -20 0 20 40 60 80 100 120 140 160 0.1 1 10 t , junction temperature ( c ) total switching lo... |
Description |
600V Fast 1-8 kHz 3-Phase Bridge IGBT in a IMS-2 package IGBT SIP MODULE IGBT的SIP协议模块
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File Size |
269.63K /
10 Page |
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SamHop Microelectronics...
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Part No. |
STM122N
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OCR Text |
... fall time turn-on delay time m ohm v gs =10v , i d =1.7a v ds =5v,i d =1.7a input capacitance output capacitance dynamic characteristics r ds(on) drain-source on-state resistance forward transconductance i dss ua gate threshold voltage v d... |
Description |
Super high dense cell design for low RDS(ON). Dual N-Channel Enhancement Mode Field Effect Transistor
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File Size |
101.77K /
7 Page |
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it Online |
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ShenZhen FreesCale Electronics. Co., Ltd
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Part No. |
AO4610
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OCR Text |
...age (v) rds(on), on-resistance (ohm ) id = 7 a ta = 25 o c 1 1.2 1.4 1.6 1.8 2 2.2 -50 -25 0 25 50 75 100 125 150 175 ta, ambient temperatur...7a -15v 0.6 0.8 1.0 1.2 1.4 1.6 -50 -25 0 25 50 75 100 125 150 tj juncation temperature (c) normaliz... |
Description |
P & N-Channel 30-V (D-S) MOSFET High power and current handling capability
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File Size |
371.62K /
8 Page |
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it Online |
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Price and Availability
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