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  p-hemt Datasheet PDF File

For p-hemt Found Datasheets File :: 488    Search Time::2.312ms    
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    NPT1015 NPT1015-15

M/A-COM Technology Solutions, Inc.
M/A-COM Technology Solution...
M/A-COM Technology Solu...
Part No. NPT1015 NPT1015-15
OCR Text ... 45w gan hemt s ym b ol p a r am e t e r min t y p m a x u n i t s g ss sm al l - sig nal g ain - 13.5 - db p sat s a t u r a t e d o u tp ut p o w e r - 47.3 - d bm ? sat efficiency at s a t ...
Description Gallium Nitride 28V, 45W, DC-3.5 GHz HEMT

File Size 2,227.52K  /  10 Page

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    MAGX-003135-SB3PPR MAGX-003135-180L00

M/A-COM Technology Solutions, Inc.
Part No. MAGX-003135-SB3PPR MAGX-003135-180L00
OCR Text ...er pin = 14w peak, 1.4w ave p out 180 194 - w peak power gain pout = 180w peak, 18w ave g p 10.5 11.4 - db drai...hemt pulsed power transistor 3.1 - 3.5 ghz, 180w peak, 300us pulse, 10% duty magx - 003135 - ...
Description GaN HEMT Pulsed Power Transistor 3.1 - 3.5 GHz, 180W Peak, 300us Pulse, 10% Duty

File Size 696.56K  /  7 Page

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    ATC100A0R7BT ATC100A0R2BT ATC100A120JT ATC100A220JT 9337CKE100M C2012X7R2A103M EEA-FC1E100 ERJ-8GEYJ510 ERJ-8GEYJ100V 28

RF Micro Devices
Part No. ATC100A0R7BT ATC100A0R2BT ATC100A120JT ATC100A220JT 9337CKE100M C2012X7R2A103M EEA-FC1E100 ERJ-8GEYJ510 ERJ-8GEYJ100V 28F0181-1SR-10 35F0121-1SR-10 RF3928TR13 ERJ-6GEYJ120V ERJ-3GEY0R00 RF3928PCBA-410 RF3928S2 RF3928SB RF3928SQ RF3928SR ATC100B620JT 0805G102M101NT
OCR Text ...tisfy the following expression: p diss < (t j ? t c )/r th j - c and t c = t case parameter specification unit condition min. typ. max. ...hemt devices are esd sensitive ma terials. please use proper esd pr ecautions when handling devices ...
Description 280W GaN WIDEBAND PULSED POWER

File Size 929.00K  /  11 Page

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    NPT2021-DC-2P2GHZ-50W NPT2021-15

M/A-COM Technology Solutions, Inc.
M/A-COM Technology Solu...
Part No. NPT2021-DC-2P2GHZ-50W NPT2021-15
OCR Text ... 50w gan hemt s ym b ol p a r am e t e r min t y p m a x u n i t s g ss sm al l - sig nal g ain - 17 - db p sat s a t u r a t e d o u tp ut p o w e r - 47.5 - d bm ? sat efficiency at s a t u ...
Description Gallium Nitride 48V, 50W, DC-2.2 GHz HEMT

File Size 927.26K  /  4 Page

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    CFY66 CFY66-08 CFY66-08P CFY66-10 CFY66-10P

Infineon Technologies A...
INFINEON[Infineon Technologies AG]
Part No. CFY66 CFY66-08 CFY66-08P CFY66-10 CFY66-10P
OCR Text ...tics) (ql) Quality Level: P: Professional Quality, H: High Rel Quality, S: Space Quality, ES: ESA Space Quality, Ordering Code: Ordering Code: Ordering Code: Ordering Code: on request on request on request on request (see ord...
Description    HiRel K-Band GaAs Super Low Noise HEMT

File Size 537.83K  /  7 Page

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    EUDYNA[Eudyna Devices Inc]
Part No. ESN35A090IV EGN35A090IV
OCR Text ...urrent Channel Temperature r P Symbol VDS IGF IGR Tch im l e Condition RG=5 RG=5 Vp VGDO P3dB d GL Rth a in Rating Limit ...HEMT Output Power vs. Frequency VDS=50V IDS(DC)=500mA Output Power and Drain Efficiency vs. Input P...
Description High Voltage - High Power GaN-HEMT

File Size 104.70K  /  4 Page

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    HMC-AUH232

Hittite Microwave Corporation
Part No. HMC-AUH232
OCR Text ...erence signal [3] With a 2.7 VP-P input signal *Unless otherwise indicated, all measurements are from probed die [4] [3] Min. Typ. 6 - 12 8 0.4 16.5 Max. Units pS Vp-p pS dBm dBm dBm 22 17 22 19.5 0.9 5.4 4.2 4.6 5.4 8.3 ...
Description GaAs HEMT MMIC MODULATOR DRIVER AMPLIFIER, DC - 43 GHz

File Size 209.14K  /  5 Page

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    MAGX-002731-SB1PPR MAGX-002731-030L00

M/A-COM Technology Solutions, Inc.
Part No. MAGX-002731-SB1PPR MAGX-002731-030L00
OCR Text ...s output power pin = 3w peak p out 30 3 40 4 - w peak w ave power gain pin = 3w peak g p 10 11.4 - db drain efficiency pin ...hemt pulsed power transistor 2.7 - 3.1 ghz, 30w peak, 500u s pulse, 10% duty cycle magx-002731-03...
Description GaN HEMT Pulsed Power Transistor 2.7 - 3.1 GHz, 30W Peak, 500us Pulse, 10% Duty Cycle

File Size 339.28K  /  7 Page

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    MAGX-003135-SB5PPR MAGX-003135-120L00

M/A-COM Technology Solutions, Inc.
Part No. MAGX-003135-SB5PPR MAGX-003135-120L00
OCR Text ... power pin = 10w peak, 1w ave p out 120 12 135 13.5 - w peak w ave power gain pin = 10w peak, 1w ave g p 10.8 11.8 - db drain ...hemt pulsed power transistor 3.1 - 3.5 ghz, 120w peak, 300us pulse, 10% duty magx-003135-120l00 ...
Description GaN HEMT Pulsed Power Transistor 3.1 - 3.5 GHz, 120W Peak, 300us Pulse, 10% Duty

File Size 469.89K  /  11 Page

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    MGF4921AM

Mitsubishi Electric Semiconductor
Part No. MGF4921AM
OCR Text ...40 -25 -20 -15 -10 -5 0 5 10 15 p in (dbm)s.c.l p out , im 3 (dbm)s.c.l pout im 3 f=2.32gh z, 3m h z offse t iip 3 =5.0dbm oip 3 =21dbm n...hemt > mgf4921am 4pin flat lead package publication date : oct., 2011 5 s parameters ...
Description 4pin flat lead package

File Size 227.08K  /  10 Page

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