Part # |
Manufacturer |
Description |
Price |
BuyNow Qty. |
IKP10N60TXKSA1 61M6727 |
Infineon Technologies AG |
Igbt, N, 600V, 10A, To-220; Continuous Collector Current:20A; Collector Emitter Saturation Voltage:2.05V; Power Dissipation:110W; Collector Emitter Voltage Max:600V; No. Of Pins:3Pins; Operating Temperature Max:175°C; Product Range:-Rohs Compliant: Yes |Infineon IKP10N60TXKSA1 |
5000: USD0.781 2500: USD0.81 1000: USD0.811 500: USD0.985 100: USD1.07 10: USD1.19 1: USD1.8
|
2522 |
IGP10N60TXKSA1 73AJ6861 |
Infineon Technologies AG |
Igbt Single Transistor, 600V, To-220-3 Rohs Compliant: Yes |Infineon IGP10N60TXKSA1 |
5000: USD0.819 2500: USD0.846 1000: USD0.884 500: USD1.02 100: USD1.17 10: USD1.45 1: USD1.72
|
960 |
IXFP10N60P 03AH0785 |
Littelfuse Inc |
Discmosfetn-Ch Hiperfet-Pola To-220Ab/Fp/ Tube |Littelfuse IXFP10N60P |
2500: USD1.98 1000: USD2.13 500: USD2.42 100: USD2.65
|
0 |
FDP10N60NZ 27T6444 |
onsemi |
Uf2 600V 750Mohm To220/Tube |Onsemi FDP10N60NZ |
5000: USD1.13 2500: USD1.16 1000: USD1.44
|
0 |
SGP10N60RUFDTU 83C0922 |
onsemi |
Transistor, igbt, n-Chan+Diode,600V V(Br)Ces,16A I(C),to-220 Rohs Compliant: Yes |Onsemi SGP10N60RUFDTU |
1: USD1.48
|
0 |
Part # |
Manufacturer |
Description |
Price |
BuyNow Qty. |
IKP10N60TXKSA1 448-IKP10N60TXKSA1-ND |
Infineon Technologies AG |
IGBT NPT FS 600V 20A TO220-3 |
10000: USD0.705 5000: USD0.72914 2000: USD0.75762 1000: USD0.7975 500: USD0.9399 100: USD1.1108 50: USD1.35 1: USD1.68
|
2295 |
FGP10N60UNDF 2156-FGP10N60UNDF-ND |
Fairchild Semiconductor Corporation |
FGP10N60UNDF - IGBT, 600V, 10A, |
305: USD0.99
|
800 |
STP10N60M2 497-13970-5-ND |
STMicroelectronics |
MOSFET N-CH 600V 7.5A TO220 |
10000: USD0.53452 5000: USD0.56039 2000: USD0.58841 1000: USD0.62505 500: USD0.7673 100: USD0.9052 50: USD1.1424 1: USD1.42
|
700 |
IGP10N60TXKSA1 IGP10N60TXKSA1-ND |
Infineon Technologies AG |
IGBT NPT FS 600V 20A TO220-3 |
10000: USD0.63713 5000: USD0.65894 2000: USD0.68468 1000: USD0.72072 500: USD0.84942 100: USD1.0039 50: USD1.22 1: USD1.52
|
459 |
IXFP10N60P IXFP10N60P-ND |
Littelfuse Inc |
MOSFET N-CH 600V 10A TO220AB |
500: USD1.41562 100: USD1.4473 50: USD1.6886 1: USD2.13
|
68 |
Part # |
Manufacturer |
Description |
Price |
BuyNow Qty. |
IGP10N60TXK IGP10N60TXKSA1 |
Infineon Technologies AG |
Trans IGBT Chip N-CH 600V 20A 3-Pin(3+Tab) TO-220AB - Rail/Tube (Alt: IGP10N60TXKSA1) |
|
0 |
IKP10N60T IKP10N60TXKSA1 |
Infineon Technologies AG |
Trans IGBT Chip N-CH 600V 20A 3-Pin TO-220 Tube - Rail/Tube (Alt: IKP10N60TXKSA1) |
|
0 |
SGP10N60RUFDTU SGP10N60RUFDTU |
onsemi |
Trans IGBT Chip N-CH 600V 16A 3-Pin(3+Tab) TO-220 Rail - Rail/Tube (Alt: SGP10N60RUFDTU) |
63000: USD0.992 32000: USD1.024 6300: USD1.056 3200: USD1.088 1300: USD1.12 630: USD1.152 625: USD1.184
|
0 |
STP10N60M2 STP10N60M2 |
STMicroelectronics |
Trans MOSFET N-CH 600V 7.5A 3-Pin TO-220 Tube - Rail/Tube (Alt: STP10N60M2) |
6000: USD0.59539 4000: USD0.60819 2000: USD0.62099
|
0 |
Part # |
Manufacturer |
Description |
Price |
BuyNow Qty. |
STP10N60M2 511-STP10N60M2 |
STMicroelectronics |
MOSFET N-CH 600V 0.56Ohm 7.5A MDmesh M2 |
1: USD1.04 10: USD0.896 100: USD0.77 500: USD0.696 1000: USD0.614 2000: USD0.573 5000: USD0.567 10000: USD0.551
|
2317 |
IKP10N60T 726-IKP10N60T |
Infineon Technologies AG |
IGBT Transistors LOW LOSS DuoPack 600V 10A |
1: USD1.68 10: USD1.4 100: USD1.12 250: USD1.06 500: USD0.893 1000: USD0.815 2500: USD0.784 5000: USD0.762 10000: USD0.749
|
541 |
IKP10N60TXKSA1 726-IKP10N60TXKSA1 |
Infineon Technologies AG |
IGBT Transistors LOW LOSS DuoPack 600V 10A |
1: USD1.68 10: USD1.12 100: USD0.96 250: USD0.958 500: USD0.846 1000: USD0.757 2500: USD0.71 5000: USD0.705
|
853 |
IGP10N60T 726-IGP10N60T |
Infineon Technologies AG |
IGBT Transistors LOW LOSS IGBT TECH 600V 10A |
1: USD1.51 10: USD1.26 100: USD1 250: USD0.926 500: USD0.84 1000: USD0.72 2500: USD0.684 5000: USD0.658 10000: USD0.643
|
23 |
IGP10N60TXKSA1 726-IGP10N60TXKSA1 |
Infineon Technologies AG |
IGBT Transistors LOW LOSS IGBT TECH 600V 10A |
1: USD1.52 10: USD1.22 100: USD0.99 250: USD0.981 500: USD0.849 1000: USD0.684 5000: USD0.658 10000: USD0.637
|
28 |
Part # |
Manufacturer |
Description |
Price |
BuyNow Qty. |
STP10N60M2
|
STMicroelectronics |
N-channel 600 V, 0.55 Ohm typ., 7.5 A MDmesh M2 Power MOSFET in TO-220 package |
1: USD1.02 10: USD0.88 100: USD0.76 500: USD0.68
|
2317 |
Part # |
Manufacturer |
Description |
Price |
BuyNow Qty. |
SGP10N60
|
Infineon Technologies AG |
|
|
438 |
FQP10N60C
|
Fairchild Semiconductor Corporation |
|
|
200 |
FQP10N60C
|
Fairchild Semiconductor Corporation |
|
|
42 |
Part # |
Manufacturer |
Description |
Price |
BuyNow Qty. |
FDP10N60NZ
|
Fairchild Semiconductor Corporation |
FDP10N60NZ - Power Field-Effect Transistor, 10A, 600V, 0.75ohm, N-Channel, MOSFET, TO-220AB |
1000: USD1.12 500: USD1.19 100: USD1.24 25: USD1.29 1: USD1.32
|
21723 |
FQP10N60C
|
Fairchild Semiconductor Corporation |
9.5A, 600V, 0.73ohm, N-Channel Power MOSFET, TO-220AB ' |
1000: USD1.02 500: USD1.08 100: USD1.12 25: USD1.17 1: USD1.19
|
244 |
IGP10N60TXKSA1
|
Infineon Technologies AG |
IGP10N60 - Discrete IGBT without Anti-Parallel Diode |
1000: USD0.6318 500: USD0.669 100: USD0.6987 25: USD0.7284 1: USD0.7433
|
500 |
FDP10N60NZ
|
onsemi |
FDP10N60NZ - Power Field-Effect Transistor, 10A, 600V, 0.75ohm, N-Channel, MOSFET, TO-220AB |
1000: USD1.12 500: USD1.19 100: USD1.24 25: USD1.29 1: USD1.32
|
10506 |
SGP10N60RUFDTU
|
onsemi |
SGP10N60RUFD - Insulated Gate Bipolar Transistor, 16A, 600V, N-Channel, TO-220AB |
1000: USD1.15 500: USD1.22 100: USD1.27 25: USD1.33 1: USD1.35
|
23682 |
Part # |
Manufacturer |
Description |
Price |
BuyNow Qty. |
IXFP10N60P IXFP10N60P |
IXYS Corporation |
MOSFETs HiPERFET Id10 BVdass600 |
300: USD1.9 500: USD1.86
|
0 |
IXFP90N20X3 IXFP90N20X3 |
IXYS Corporation |
MOSFETs 200V/90A X3-Class HiPerFET |
300: USD4.96 500: USD4.65 1000: USD4.18 2000: USD3.92
|
0 |
IXTP10N60P IXTP10N60P |
IXYS Corporation |
MOSFETs 10.0 Amps 600 V 0.74 Ohm Rds |
300: USD2.41 500: USD2.31 1000: USD2.01 2500: USD1.89
|
0 |
Part # |
Manufacturer |
Description |
Price |
BuyNow Qty. |
IKP10N60TXKSA1 IKP10N60T |
Infineon Technologies AG |
Transistor: IGBT; 600V; 10A; 110W; TO220AB |
50: USD1.35 10: USD1.45 3: USD1.57 1: USD1.73
|
38 |
IXTP10N60P IXTP10N60P |
IXYS Corporation |
Transistor: N-MOSFET; unipolar; 600V; 10A; 200W; TO220AB; 500ns |
50: USD2.25 10: USD2.48 3: USD2.82 1: USD3.14
|
7 |
IGP10N60TXKSA1 IGP10N60T |
Infineon Technologies AG |
Transistor: IGBT; 600V; 18A; 110W; TO220-3 |
50: USD1.1 10: USD1.19 3: USD1.32 1: USD1.5
|
343 |
IXFP10N60P IXFP10N60P |
IXYS Corporation |
Transistor: N-MOSFET; unipolar; 600V; 10A; 200W; TO220AB; 120ns |
50: USD2.37 10: USD2.61 3: USD2.96 1: USD3.29
|
139 |
STP10N60M2 STP10N60M2 |
STMicroelectronics |
Transistor: N-MOSFET; MDmesh™ M2; unipolar; 600V; 4.9A; Idm: 30A |
500: USD0.97 100: USD1.05 25: USD1.17 5: USD1.32 1: USD1.47
|
0 |
Part # |
Manufacturer |
Description |
Price |
BuyNow Qty. |
IKP10N60TXKSA1
|
Infineon Technologies AG |
|
5: USD1.8184941 10: USD1.763743 25: USD1.6760781 100: USD1.5583475 500: USD1.4184633
|
235 |
Part # |
Manufacturer |
Description |
Price |
BuyNow Qty. |
SKP10N60
|
Infineon Technologies AG |
FAST IGBT IN NPT-TECHNOLOGY WITH SOFT, FAST RECOVERY ANTI-PARALLEL EMCON DIODE Insulated Gate Bipolar Transistor, 20A I(C), 600V V(BR)CES, N-Channel, TO-220AB |
|
69958 |
IKP10N60T
|
Infineon Technologies AG |
L LOSS DUOPACK: IGBT IN TRENCH AND FIELDSTOP TECHNOLOGY WITH SOFT, FAST RECOVERY ANTI-PARALLEL EMCON HE DIODE Insulated Gate Bipolar Transistor, 20A I(C), 600V V(BR)CES, N-Channel, TO-220AB |
|
1100 |
FDP10N60
|
Fairchild Semiconductor Corporation |
600 V, 9 A, 0.8 OHM, FRFET N-CHANNEL MOSFET Power Field-Effect Transistor, 9A I(D), 600V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB |
|
950 |
MDP10N60GTH
|
MagnaChip Semiconductor Ltd |
N-CHANNEL MOSFET 600V, 10A, 0.7 OHM Power Field-Effect Transistor |
|
600 |
Part # |
Manufacturer |
Description |
Price |
BuyNow Qty. |
FMP10N60S1-P
|
Fuji Electric Co Ltd |
MOSFET |
1: USD2.12 500: USD1.97
|
10 |
Part # |
Manufacturer |
Description |
Price |
BuyNow Qty. |
WMP10N60C2 WMP10N60C2 |
CYG |
POWER MOSFET TRANSISTOR |
|
0 |
Part # |
Manufacturer |
Description |
Price |
BuyNow Qty. |
IKP10N60T IGBT2396 |
Infineon Technologies AG |
IGBT 600V 10A 1,5V TO220-3 |
500: USD1.0108 1000: USD0.9314 1500: USD0.9097 2000: USD0.8231
|
500 |
Part # |
Manufacturer |
Description |
Price |
BuyNow Qty. |
IKP10N60T IS61LF102418A-7.5TQLI |
Infineon Technologies AG |
Trans IGBT Chip N-CH 600V 20A 3-Pin TO-220 Tube (Alt: IS61LF102418A-7.5TQLI) |
|
0 |
Part # |
Manufacturer |
Description |
Price |
BuyNow Qty. |
STP10N60M2 STP10N60M2 |
STMicroelectronics |
Trans MOSFET N-CH 600V 7.5A 3-Pin TO-220 Tube (Alt: STP10N60M2) |
|
0 |
Part # |
Manufacturer |
Description |
Price |
BuyNow Qty. |
IGP10N60TXKSA1 C1S322001059455 |
Infineon Technologies AG |
IGBT discrete |
100: USD0.785 50: USD0.908 10: USD0.963 1: USD1.19
|
150 |
STP10N60M2 C1S730200794505 |
STMicroelectronics |
Trans MOSFET N-CH 600V 7.5A 3-Pin(3+Tab) TO-220 Tube |
1: USD0.706
|
5 |
IKP10N60TXKSA1 C1S322001059835 |
Infineon Technologies AG |
IGBT discrete |
500: USD0.73 200: USD0.732 100: USD0.768 50: USD0.844 10: USD0.896 1: USD1.34
|
500 |
Part # |
Manufacturer |
Description |
Price |
BuyNow Qty. |
IKP10N60TXKSA1
|
Infineon Technologies AG |
Hard-switching 600 V, 10 A TRENCHSTOP IGBT3 copacked with full-rated free-wheeling diode in a TO220 package, leads to significant improvement of static as well as dynamic performance of the device, due to combination of trench-cell and fieldstop concept. The combination of IGBT with soft recovery emitter controlled diode further minimizes the turn-on losses. The highest efficiency is reached due to the best compromise between switching and conduction losses. |
1: USD1.03184
|
470 |
IGP10N60T
|
Infineon Technologies AG |
TO-220-3 IGBTs ROHS |
5: USD1.43707 50: USD1.1073 150: USD0.97726 500: USD0.91826 2500: USD0.89249
|
498 |
IKP10N60T
|
Infineon Technologies AG |
TO-220-3 IGBTs ROHS |
5: USD1.43844 50: USD1.19041 150: USD1.11779 500: USD1.08604 2500: USD1.07094
|
459 |
Part # |
Manufacturer |
Description |
Price |
BuyNow Qty. |
IKP10N60TXKSA1 SP000683062 |
Infineon Technologies AG |
IGBT, General Purpose, 20 A, 2.05 V, 110 W, 600 V, TO-220, 3 Pins (Alt: SP000683062) |
|
1000 |
STP10N60M2 STP10N60M2 |
STMicroelectronics |
Trans MOSFET N-CH 600V 7.5A 3-Pin TO-220 Tube (Alt: STP10N60M2) |
|
0 |
IGP10N60TXKSA1 SP000683042 |
Infineon Technologies AG |
Trans IGBT Chip N-CH 600V 24A 3-Pin TO-220 Tube (Alt: SP000683042) |
|
0 |
Part # |
Manufacturer |
Description |
Price |
BuyNow Qty. |
SGP10N60RUFDTU
|
onsemi |
Stock, ship today |
1: USD0.8
|
17000 |
FGP10N60UNDF
|
onsemi |
Stock, ship today |
1: USD0.44
|
800 |
Part # |
Manufacturer |
Description |
Price |
BuyNow Qty. |
STP10N60M2 STP10N60M2 |
STMicroelectronics |
N-channel 600 V, 0.55 Ohm typ., 7.5 A MDmesh M2 Power MOSFET in TO-220 package |
55: USD1.666 300: USD1.598
|
0 |
Part # |
Manufacturer |
Description |
Price |
BuyNow Qty. |
IXTP10N60P
|
IXYS Corporation |
MOSFET DIS.10A 600V N-CH TO220 POLAR THT |
64: USD4.5
|
64 |
IKP10N60TXKSA1
|
Infineon Technologies AG |
|
500: USD1.27 1000: USD1.17
|
1000 |
Part # |
Manufacturer |
Description |
Price |
BuyNow Qty. |
IXGP10N60A
|
IXYS Integrated Circuits Division |
IGBT DIS.SINGLE 10A 600V H.SPEED TO220AB |
50: USD1.1284 1: USD1.24124
|
0 |
IXTP10N60P
|
IXYS Integrated Circuits Division |
MOSFET DIS.10A 600V N-CH TO220 POLAR THT |
50: USD3.1589 1: USD3.47479
|
80 |
IXKP10N60C5
|
IXYS Integrated Circuits Division |
MOSFET DIS.10A 600V N-CH TO220AB COOLMOS THT |
50: USD1.3718 1: USD1.50898
|
0 |
IXKP10N60C5M
|
IXYS Integrated Circuits Division |
MOSFET DIS.5.4A 600V N-CH PLUS220FP COOLMOS THT |
50: USD1.3939 1: USD1.53329
|
0 |
IXFP10N60P
|
IXYS Integrated Circuits Division |
MOSFET DIS.10A 600V N-CH TO220 HIPERFET THT |
50: USD3.0009 1: USD3.30099
|
0 |
Part # |
Manufacturer |
Description |
Price |
BuyNow Qty. |
IKP10N60T
|
Infineon Technologies AG |
600V,24A,IGBT with Anti-Parallel Diode |
1: USD1.15 100: USD0.96 500: USD0.84 1000: USD0.82
|
55 |
|
|