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  power mos v 100v 144a 0 011 oh Datasheet PDF File

For power mos v 100v 144a 0 011 oh Found Datasheets File :: 150+       Page :: | 1 | 2 | 3 | 4 | 5 | <6> | 7 | 8 | 9 | 10 | 11 | 12 | 13 | 14 | 15 |   

    IRF9520 FN2281

INTERSIL[Intersil Corporation]
Part No. IRF9520 FN2281
Description 6A, 1000000'>v, 0.600 ohm, P-Channel 0000'>power 0000'>mosFET(6A, 1000000'>v, 0.600 惟, P娌?????0000'>mos?烘?搴??)
From old datasheet system
6A 1000000'>v 0.600 ohm P-Channel 0000'>power 0000'>mosFET
6A/ 1000000'>v/ 0.600 ohm/ P-Channel 0000'>power 0000'>mosFET

File Size 57.36K  /  7 Page

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    IRF9510 FN2214

Intersil Corporation
Part No. IRF9510 FN2214
Description From old datasheet system
3.0A, 1000000'>v, 1.200 ohm, P-Channel 0000'>power 0000'>mosFET
3.0A/ 1000000'>v/ 1.200 ohm/ P-Channel 0000'>power 0000'>mosFET
3.0A, 1000000'>v, 1.200 ohm, P-Channel 0000'>power 0000'>mosFET(3.0A, 1000000'>v, 1.200 Ω,P沟道功率0000'>mos场效应管)

File Size 58.92K  /  7 Page

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    IRFR5410 IRFU5410 IRFRU5410 IRFR5410TRL IRFR5410TRR

IRF[International Rectifier]
Part No. IRFR5410 IRFU5410 IRFRU5410 IRFR5410TRL IRFR5410TRR
Description -1000000'>v Single P-Channel HEXFET 0000'>power 0000'>mosFET in a I-Pak package
-1000000'>v Single P-Channel HEXFET 0000'>power 0000'>mosFET in a D-Pak package
0000'>power 0000'>mosFET(0000'>vdss=-1000000'>v, Rds(on)=0.205ohm, Id=-13A)
HEXFET? 0000'>power 0000'>mosFET

File Size 212.33K  /  10 Page

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    IRHG6110 IRHG63110 IRHG6110P IRHG6110N IRHG6110PBF IRHG6110-15

IRF[International Rectifier]
Part No. IRHG6110 IRHG63110 IRHG6110P IRHG6110N IRHG6110PBF IRHG6110-15
Description Simple Dri0000'>ve Requirements
1000000'>v Dual 2N- and 2P- Channel 0000'>mosFET in a MO-036AB package
-1000000'>v 100kRad Hi-Rel Dual 2N and 2P -Channel TID Hardened 0000'>mosFET in a MO-036AB package
RADIATION HARDENED 0000'>power 0000'>mosFET
1000000'>v, Combination 2N-2P-CHANNEL RAD-Hard HEXFET 0000'>mosFET TECHNOLOGY
1 A, 100 0000'>v, 0.7 ohm, 4 CHANNEL, N AND P-CHANNEL, Si, 0000'>power, 0000'>mosFET, MO-036AB

File Size 191.89K  /  14 Page

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    TSD4M150 TSD4M150F TSD4M150V

SGS Thomson Microelectronics
STMicroelectronics
ST Microelectronics
Part No. TSD4M150 TSD4M150F TSD4M1500000'>v
Description 0000'>v(ds): 1000000'>v; 0000'>v(dgr): 1000000'>v; 0000'>v(gs): -200000'>v; 500W; I(d): 135A; N-channel enhancement mode ISOFET 0000'>power 0000'>mos transistor module. For DC-DC & DC-AC con0000'>verters, SMPS & UPS, motor control, output storage for PWM, ultrasonic circuits

File Size 353.75K  /  8 Page

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    IRF540N IRF540NPBF

International Rectifier, Corp.
IRF[International Rectifier]
Part No. IRF540N IRF540NPBF
Description 0000'>power 0000'>mosFET(0000'>vdss=1000000'>v, Rds(on)=44mohm, Id=33A) 功率0000'>mosFET(减振钢板基本\u003d 1000000'>v的,的Rds(on)\u003d 44mohm,身份证\u003d 33A条)
1000000'>v Single N-Channel HEXFET 0000'>power 0000'>mosFET in a TO-220AB package

File Size 97.90K  /  8 Page

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    IRF[International Rectifier]
Part No. IRFU9120 IRFR9120 IRFR9120TRR IRFR9120TRL IRFR9120PBF IRFU9120PBF
Description -1000000'>v Single P-Channel HEXFET 0000'>power 0000'>mosFET in a I-Pak package
-1000000'>v Single P-Channel HEXFET 0000'>power 0000'>mosFET in a D-Pak package
0000'>power 0000'>mosFET(0000'>vdss=-1000000'>v, Rds(on)=0.60ohm, Id=-5.6A)

File Size 172.25K  /  6 Page

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    IR
International Rectifier, Corp.
Part No. IRFP4710 IRFP4710PBF
Description 1000000'>v Single N-Channel HEXFET 0000'>power 0000'>mosFET in a TO-247AC package
0000'>power 0000'>mosFET(0000'>vdss=1000000'>v, Rds(on)max=0.014ohm, Id=72A) 功率0000'>mosFET(减振钢板基本\u003d 1000000'>v的,的Rdson)最大值\u003d 0.014ohm,身份证\u003d 72A条)

File Size 101.93K  /  8 Page

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    FSL913A0D FSL913A0D1 FSL913A0D3 FSL913A0R FSL913A0R4 FSL913A0R1 FSL913A0R3 FSL9130R3 FSL9130R4

Intersil, Corp.
INTERSIL[Intersil Corporation]
Part No. FSL913A0D FSL913A0D1 FSL913A0D3 FSL913A0R FSL913A0R4 FSL913A0R1 FSL913A0R3 FSL9130R3 FSL9130R4
Description 7A, -1000000'>v, 0.300 ohm, Rad Hard, SEGR Resistant, P-Channel 0000'>power 0000'>mosFETs 7 A, 100 0000'>v, 0.3 ohm, P-CHANNEL, Si, 0000'>power, 0000'>mosFET, TO-205AF
7A, -1000000'>v, 0.300 ohm, Rad Hard, SEGR Resistant, P-Channel 0000'>power 0000'>mosFETs 7A 1000000'>v的,0.300欧姆,拉德硬,SEGR性,P通道功率0000'>mosFET
7A/ -1000000'>v/ 0.300 ohm/ Rad Hard/ SEGR Resistant/ P-Channel 0000'>power 0000'>mosFETs
5A/ -1000000'>v/ 0.680 ohm/ Rad Hard/ SEGR Resistant/ P-Channel 0000'>power 0000'>mosFETs

File Size 58.67K  /  8 Page

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    Infineon
Part No. BUZ22SMD BUZ22E3045A BUZ22E3046
Description 0000'>power 0000'>mosFET, 1000000'>v,D²PAK , RDSon=0.055 ohm, 34A, NL
Low 0000'>voltage 0000'>mosFETs - 0000'>power 0000'>mosFET, 1000000'>v,DPAK , RDSon=0.055 ohm, 34A, NL
N-Channel SIP0000'>mos 0000'>power Transistor

File Size 85.86K  /  8 Page

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For power mos v 100v 144a 0 011 oh Found Datasheets File :: 150+       Page :: | 1 | 2 | 3 | 4 | 5 | <6> | 7 | 8 | 9 | 10 | 11 | 12 | 13 | 14 | 15 |   

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