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DD312 A102A BR1510 2SD259 00080 BPC1002 HFA1145 150CT
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  product application informatio Datasheet PDF File

For product application informatio Found Datasheets File :: 150+       Page :: | 1 | 2 | 3 | 4 | 5 | <6> | 7 | 8 | 9 | 10 | 11 | 12 | 13 | 14 | 15 |   

    BUZ901X4S BUZ900X4S

Magnatec
Electronic Theatre Controls, Inc.
ETC[ETC]
List of Unclassifed Manufacturers
Part No. BUZ901X4S BUZ900X4S
Description N-Channel Power MOSFET For Audio application(N沟道功率型MOS场效应管(用于音频电路)) N沟道功率MOSFET为音频应用(不适用马鞍山沟道功率型场效应管(用于音频电路)
NEW product UNDER DEVELOPMENT 新产品开发中

File Size 33.10K  /  2 Page

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    YCL
Part No. MF601BE
Description product type: micro filter. System application: micro filter for ADSL CPE side.

File Size 123.12K  /  11 Page

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    DF2S8.2S

Toshiba Corporation
Toshiba Semiconductor
Part No. DF2S8.2S
Description Zener Diode; application: General; Pd (mW): 200; Vz (V): 12.08 to 12.60; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: URP
product for Use Only as Protection against Electrostatic Discharge (ESD).

File Size 115.34K  /  3 Page

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    DF5A3.6CFU

Toshiba Corporation
Toshiba Semiconductor
Part No. DF5A3.6CFU
Description Zener Diode; application: General; Pd (mW): 200; Vz (V): 20.21 to 21.08; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: URP
product for Use Only as Protection against Electrostatic Discharge (ESD)

File Size 161.17K  /  3 Page

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    DF3A8.2LFV

Toshiba Corporation
Toshiba Semiconductor
Part No. DF3A8.2LFV
Description Zener Diode; application: General; Pd (mW): 200; Vz (V): 18.86 to 21.08; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: URP
product for Use Only as Protection against Electrostatic Discharge (ESD)

File Size 126.44K  /  3 Page

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    DF2S16FS

Toshiba Corporation
Toshiba Semiconductor
Part No. DF2S16FS
Description Zener Diode; application: General; Pd (mW): 200; Vz (V): 9.45 to 9.87; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: URP
product for Use Only as Protection against Electrostatic Discharge (ESD).

File Size 130.11K  /  3 Page

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    DF3A8.2LFU07

Toshiba Corporation
Toshiba Semiconductor
Part No. DF3A8.2LFU07
Description Zener Diode; application: General; Pd (mW): 200; Vz (V): 2.65 to 2.90; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: URP
product for Use Only as Protection against Electrostatic Discharge (ESD)

File Size 130.76K  /  3 Page

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    DF3A8.2FU

Toshiba Corporation
Toshiba Semiconductor
Part No. DF3A8.2FU
Description Zener Diode; application: General; Pd (mW): 200; Vz (V): 2.50 to 2.90; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: URP
product for Use Only as Protection against Electrostatic Discharge (ESD)

File Size 170.37K  /  3 Page

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    DF3A6.8LFV

Toshiba Corporation
Toshiba Semiconductor
Part No. DF3A6.8LFV
Description Zener Diode; application: General; Pd (mW): 200; Vz (V): 1.90 to 2.20; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: URP
product for Use Only as Protection against Electrostatic Discharge (ESD).

File Size 119.34K  /  3 Page

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    DF3A6.2FU

Toshiba Corporation
Toshiba Semiconductor
Part No. DF3A6.2FU
Description Zener Diode; application: General; Pd (mW): 200; Vz (V): 16.35 to 17.09; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: URP
product for Use Only as Protection against Electrostatic Discharge (ESD).

File Size 157.97K  /  3 Page

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