rg-122 u pdf Datasheet P6 Full Text Search --- IC-ON-LINE


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rg-122 u Datasheet PDF File

For rg-122 u Found Datasheets File :: 593 Search Time::2.156ms
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				IRF[International Rectifier]
Part No.	IRF7706 IRF7706TR
OCR Text	...VGS = -10V 69 ID = -1.0A ns 366 RG = 6.0 183 RD = 15 --- VGS = 0V --- pF VDS = -25V --- = 1.0MHz Source-Drain Ratings and Characteristics IS ISM VSD trr Qrr Parameter Continuous Source Current (Body Diode) Pulsed Source Current...
Description	-30V Single P-Channel HEXFET Power MOSFET in a TSSOP-8 package Power MOSFET(Vdss=-30V)
File Size	151.09K / 8 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRFIB6N60A IRFIB6N60APBF
OCR Text	...VDD = 300V --- ID = 9.2A ns --- RG = 9.1W --- RD = 35.5W,See Fig. 10 --- VGS = 0V --- VDS = 25V --- pF = 1.0MHz, See Fig. 5 --- VGS = 0V, ...122) -B13.70 (.540) 13.50 (.530) C D A 3X 1.40 (.055) 1.05 (.042) 3X 0.90 (.035) 0.70 (.028) 0.25...
Description	600V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package Power MOSFET(Vdss=600V, Rds(on)max=0.75ohm, Id=5.5A) HEXFET? Power MOSFET Power MOSFET(Vdss=600V/ Rds(on)max=0.75ohm/ Id=5.5A)
File Size	146.70K / 8 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRGP35B60PD
OCR Text	...= 1mA (25C-125C) 4, 5,6,8,9 RG VCE(on) Internal Gate Resistance Collector-to-Emitter Saturation Voltage VGE(th) VGE(th)/TJ Gat...122 10 465 405 870 34 11 150 16 -- -- -- -- -- pF VGE = 0V VCC = 30V f = 1Mhz ns J ns J nC IC = 22A ...
Description	WARP2 SERIES IGBT WITH uLTRAFAST SOFT RECOVERY DIODE
File Size	284.71K / 10 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRL530NL IRL530NS
OCR Text	... VDD = 50V --- ID = 9.0A ns --- RG = 6.0, VGS = 5.0V --- RD = 5.5, See Fig. 10 Between lead, 7.5 --- nH and center of die contact 800 --- VGS = 0V 160 --- pF VDS = 25V 90 --- = 1.0MHz, See Fig. 5 Source-Drain Ratings and Characteristic...
Description	HEXFET? Power MOSFET
File Size	174.32K / 10 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRL530N
OCR Text	... 50V 53 --- ID = 9.0A ns 30 --- RG = 6.0, VGS = 5.0V 26 --- RD = 5.5, See Fig. 10 Between lead, --- 4.5 --- nH 6mm (0.25in.) G from package --- 7.5 --- and center of die contact --- 800 --- VGS = 0V --- 160 --- pF VDS = 25V --- 90 --- = 1...
Description	HEXFET? Power MOSFET
File Size	120.98K / 8 Page	View it Online	Download Datasheet

				IXYS[IXYS Corporation]
Part No.	IXFH80N20Q IXFK80N20Q IXFT80N20Q
OCR Text	... 100 A/ms, VDD VDSS, TJ 150C, RG = 2 W TC = 25C IXFH 80N20Q IXFK 80N20Q IXFT 80N20Q VDSS ID25 RDS(on) trr = 200 V = 80 A = 28 mW...122 .021 .033 1.020 1.030 .780 .786 .215 BSC .000 .010 .000 .010 .800 .820 .090 .102 .125 .144 .239 ...
Description	Discrete MOSFETs: HiPerFET Power MOSFETS TRANSISTOR\|MOSFET\|N-CHANNEL\|200VV(BR)DSS\|80AI(D)\|TO-247AD HiPerFET Power MOSFETs Q-Class
File Size	69.47K / 2 Page	View it Online	Download Datasheet

				IXYS[IXYS Corporation]
Part No.	IXFX32N50Q IXFK30N50Q IXFK32N50Q IXFX30N50Q
OCR Text	... 100 A/s, VDD VDSS, TJ 150C, RG = 2 TC = 25C G D S (TAB) G = Gate S = Source D = Drain TAB = Drain Features l l 1.6 m...122 .021 .033 1.020 1.030 .780 .786 .215 BSC .000 .010 .000 .010 .800 .820 .090 .102 .125 .144 .239 ...
Description	TRANSISTOR \| MOSFET \| N-CHANNEL \| 500V V(BR)DSS \| 32A I(D) \| TO-264AA TRANSISTOR\|MOSFET\|N-CHANNEL\|500VV(BR)DSS\|32AI(D)\|TO-247VAR HIPERFET POWER MOSFETS Q-CLASS
File Size	110.94K / 4 Page	View it Online	Download Datasheet

				ST Microelectronics STMicroelectronics 意法半导
Part No.	TDA1908
OCR Text	... = 18V f = 1 KHz RL = 4 Po = 1W Rg = 50 Rg = 1K Rg = 10K Rg = 50 Rg = 1K Rg = 10K Rg = 10K Rg = 0 Rg = 10K Rg = 0 () () 40 39.5 RL = 4 Po = ...122 17.2 mm MIN. 3.8 1.5 0.55 0.3 1.32 0.94 19.9 17.6 5.56 10.81 2.79 18.13 0.756 0.661 0.191 0.398 ...
Description	8W AuDIO AMPLIFIER
File Size	207.06K / 12 Page	View it Online	Download Datasheet

				ST Microelectronics STMICROELECTRONICS[STMicroelectronics] 意法半导
Part No.	STu7NB90I STu7NB90
OCR Text	...ditions VDD = 450 V, ID = 3.5 A RG = 4.7 VGS = 10 V (see test circuit, Figure 3) VDD = 720V, ID = 7.4A, VGS = 10V Min. Typ. 25 12 51 12.5 23...122 0.036 0.055 0.054 0.023 0.641 0.368 0.047 0.126 0.104 0.407 0.535 0.133 D3 D2 D1 A ...
Description	OLD PRODuCT: NOT SuITABLE FOR NEW DESIGN-IN N-CHANNEL 900V - 1.1 ohm - 7.3 A Max220/Max220I PowerMesh MOSFET OLD PRODuCT: NOT SuITABLE FOR NEW DESIGN-IN N-CHANNEL 900V - 1.1 ohm - 7.3 A Max220/Max220I PowerMesh⑩ MOSFET N-CHANNEL 900V - 1.1 ohm - 7.3 A Max220/Max220I PowerMeshMOSFET
File Size	402.17K / 9 Page	View it Online	Download Datasheet

For rg-122 u Found Datasheets File :: 593 Search Time::2.156ms
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