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ON Semi
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| Part No. |
MGP15N40CL_D ON1855
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| OCR Text |
...V 400 VOLTS CLAMPED
C
G G RG RGE C E
CASE 221A-09 STYLE 9 TO-220AB E
MAXIMuM RATINGS (TJ = 25C unless otherwise noted)
Rating C...142 0.147 0.095 0.105 0.110 0.155 0.018 0.025 0.500 0.562 0.045 0.060 0.190 0.210 0.100 0.120 0.080 ... |
| Description |
15 AMPERES N-CHANNEL IGBT V CE(on) = 1.8 V 380 VOLTS CLAMPED
From old datasheet system
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| File Size |
130.90K /
6 Page |
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Motorola, Inc.
ON Semiconductor
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| Part No. |
IRF540_D ON0285 IRF540/D IRF540-D IRF540
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| OCR Text |
..., PEAK IL = 27 Apk, L = 1.0 mH, RG = 25 W) Thermal Resistance -- Junction-to-Case Thermal Resistance -- Junction-to-Ambient Maximum Lead Tem...142 0.147 0.095 0.105 0.110 0.155 0.018 0.025 0.500 0.562 0.045 0.060 0.190 0.210 0.100 0.120 0.080 ... |
| Description |
27 A, 100 V, 0.07 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
100V7A TMOS Power Field Effect Transistor （N-Channel Enhancement Mode Silicon Gate100V7A TMOS功率场效应管（N沟道增强型硅门）)
From old datasheet system
TMOS POWER FET 27 AMPERES
TMOS E-FET Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate
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| File Size |
139.23K /
6 Page |
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it Online |
Download Datasheet |
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ONSEMI[ON Semiconductor]
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| Part No. |
MGP14N60E_D ON1853 MGP14N60E ON1852
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| OCR Text |
...0 Vdc, VGE = 15 Vdc, TJ = 125C, RG = 20 ) Thermal Resistance -- Junction to Case - IGBT -- Junction to Ambient Maximum Lead Temperature for ...142 0.147 0.095 0.105 0.110 0.155 0.018 0.025 0.500 0.562 0.045 0.060 0.190 0.210 0.100 0.120 0.080 ... |
| Description |
IGBT IN TO-220 14 A @ 90 18 A @ 25 600 VOLTS
From old datasheet system
SHORT CIRCuIT RATED LOW ON-VOLTAGE
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| File Size |
117.90K /
5 Page |
View
it Online |
Download Datasheet |
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Price and Availability
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