... ID =15 A VDD = 75 V VGS = 10 V RG = 4.7 (Resistive Load, Figure 3) VDD=120V ID=30A VGS=10V Min. Typ. 12 28 64 8 27 Max. unit ns ns nC nC n...161 0.476 0.082
* on sales type
8/9
STB30NS15
Information furnished is believed to be accu...
... VDD = 100V --- ID = 28A ns --- RG = 1.8 --- VGS = 10V D Between lead, --- 6mm (0.25in.) nH G from package --- and center of die contact S --- VGS = 0V --- pF VDS = 25V --- = 1.0MHz
Source-Drain Ratings and Characteristics
IS
ISM
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Description
200V Single N-Channel HEXFET Power MOSFET in a TO-247AC package Power MOSFET(Vdss=200V, Rds(on)=0.04ohm, Id=50A) 功率MOSFET(减振钢板基本\u003d 200V的电压,的Rdson)\u003d 0.04ohm,身份证\u003d 50A条)