rg-188 u pdf Datasheet P6 Full Text Search --- IC-ON-LINE


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rg-188 u Datasheet PDF File

For rg-188 u Found Datasheets File :: 232 Search Time::1.75ms
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				International Rectifier
Part No.	IRFZ48S IRFZ48L
OCR Text	... VDD = 30V --- I D = 72A ns --- RG = 9.1 --- RD = 0.34, See Fig. 10 Between lead, nH --- and center of die contact --- VGS = 0V --- pF VDS ...188) 2.79 (.110) 2.29 (.090) 2.61 (.103) 2.32 (.091) 8.89 (.350) RE F. 1.78 (.070) 1.27 (.050) ...
Description	HEXFET? Power MOSFET
File Size	315.98K / 10 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRLZ14 IRLZ14L IRLZ14S IRLZ14SL
OCR Text	... --- VDD = 30V --- ID = 10A --- RG = 12 --- RD = 2.8, See Fig. 10 Between lead, 7.5 nH --- and center of die contact 400 --- VGS = 0V 170 -...188) 2.79 (.110) 2.29 (.090) 2.61 (.103) 2.32 (.091) 8.89 (.350) RE F. 1.78 (.070) 1.27 (.050) ...
Description	Power MOSFET(Vdss=60V, Rds(on)=0.20ohm, Id=10A)
File Size	285.26K / 10 Page	View it Online	Download Datasheet

				NEC, Corp. NEC Corp.
Part No.	2SJ607-Z 2SJ607-ZJ 2SJ607-S
OCR Text	...tarting Tch = 25C, VDD = -30 V, RG = 25 , VGS = -20 0 V (TO-263, TO-220SMD) The information in this document is subject to change withou...188 30 48 1.0 64 150 m 10 -2.5 VDS = -10 V, ID = -1 mA VDS = -10 V, ID = -42 A VGS = -10 V, I...
Description	Pch power MOSFET 60V Ron=11m ohm MAX. TO-220AB,TO-262,TO-263 MOS FIELD EFFECT TRANSISTOR MOS场效应管
File Size	77.57K / 8 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRFZ46L IRFZ46S
OCR Text	... VDD = 28V --- I D = 54A ns --- RG = 9.1 --- RD = 0.49, See Fig. 10 Between lead, nH --- and center of die contact --- VGS = 0V --- pF VDS ...188) 2.79 (.110) 2.29 (.090) 2.61 (.103) 2.32 (.091) 8.89 (.350) RE F. 1.78 (.070) 1.27 (.050) ...
Description	HEXFET? Power MOSFET
File Size	354.59K / 10 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRF3205S IRF3205L
OCR Text	...- VDD = 28V --- ID = 62A ns --- RG = 4.5 --- VGS = 10V, See Fig. 10 Between lead, 4.5 --- 6mm (0.25in.) nH G from package 7.5 --- and cente...188) 2.79 (.110) 2.29 (.090) 2.61 (.103) 2.32 (.091) 8.89 (.350) REF. 1.78 (.070) 1.27 (.050) ...
Description	Power MOSFET(Vdss=55V, Rds(on)=8.0mohm, Id=110A? Power MOSFET(Vdss=55V/ Rds(on)=8.0mohm/ Id=110A)
File Size	160.23K / 10 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	3710S IRF3710L IRF3710LPBF IRF3710S IRF3710SPBF IRF3710STRL IRF3710STRR
OCR Text	...- VDD = 50V --- ID = 28A ns --- RG = 2.5 --- VGS = 10V, See Fig. 10 Between lead, 4.5 --- 6mm (0.25in.) nH G from package 7.5 --- and cente...188) 2.79 (.110) 2.29 (.090) 2.61 (.103) 2.32 (.091) 8.89 (.350) REF. 1.78 (.070) 1.27 (.050) ...
Description	100V Single N-Channel HEXFET Power MOSFET in a D2-Pak package 100V Single N-Channel HEXFET Power MOSFET in a TO-262 package Search --To IRF3710S
File Size	572.23K / 10 Page	View it Online	Download Datasheet

				ON Semiconductor
Part No.	NTB6411AN NTB6411ANG NTB6411ANT4G NTP6411AN NTP6411ANG
OCR Text	...Vdc, IL(pk) = 56 A, L = 0.3 mH, RG = 25 W) Lead Temperature for Soldering Purposes, 1/8 from Case for 10 Seconds TL 260 C 1 THERMAL RESISTANCE RATINGS Parameter Junction-to-Case (Drain) Steady State Junction-to-Ambient (Note 1)...
Description	N-Channel Power MOSFET 100 V, 72 A, 14 mΩ N-Channel Power MOSFET 100 V, 72 A, 14 m楼?
File Size	132.55K / 7 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRFZ24NL
OCR Text	... ) Starting TJ = 25C, L =1.0mH RG = 25, I AS = 10A. (See Figure 12) Pulse width 280s; duty cycle 2%. uses IRFZ24N data and test cond...188) 2.79 (.110) 2.29 (.090) 2.61 (.103) 2.32 (.091) 8.89 (.350) RE F. 1.78 (.070) 1.27 (.050) ...
Description	Power MOSFET(Vdss=55V, Rds(on)=0.07ohm, Id=17A)
File Size	134.53K / 10 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRL6903L IRL6903S
OCR Text	... Starting TJ = 25C, L = 0.66mH RG = 25, IAS = -55A. (See Figure 12) ISD -55A, di/dt -130A/s, VDD V(BR)DSS, TJ 175C ** When moun...188) 2.79 (.110) 2.29 (.090) 2.61 (.103) 2.32 (.091) 8.89 (.350) RE F. 1.78 (.070) 1.27 (.050) ...
Description	HEXFET? Power MOSFET
File Size	147.82K / 10 Page	View it Online	Download Datasheet

				ON Semiconductor
Part No.	NTB6410AN NTB6410ANG NTB6410ANT4G NTP6410AN NTP6410ANG
OCR Text	...c, IL(pk) = 57.7 A, L = 0.3 mH, RG = 25 W) Lead Temperature for Soldering Purposes, 1/8 from Case for 10 Seconds TL 260 C 1 2 THERMAL RESISTANCE RATINGS Parameter Junction-to-Case (Drain) Steady State Junction-to-Ambient (Note ...
Description	N-Channel Power MOSFET 100 V, 76 A, 13 m楼?
File Size	138.07K / 7 Page	View it Online	Download Datasheet

For rg-188 u Found Datasheets File :: 232 Search Time::1.75ms
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