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  rg-188 u Datasheet PDF File

For rg-188 u Found Datasheets File :: 232    Search Time::1.75ms    
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    IRFZ48S IRFZ48L

International Rectifier
Part No. IRFZ48S IRFZ48L
OCR Text ... VDD = 30V --- I D = 72A ns --- RG = 9.1 --- RD = 0.34, See Fig. 10 Between lead, nH --- and center of die contact --- VGS = 0V --- pF VDS ...188) 2.79 (.110) 2.29 (.090) 2.61 (.103) 2.32 (.091) 8.89 (.350) RE F. 1.78 (.070) 1.27 (.050) ...
Description HEXFET? Power MOSFET

File Size 315.98K  /  10 Page

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    IRLZ14 IRLZ14L IRLZ14S IRLZ14SL

IRF[International Rectifier]
Part No. IRLZ14 IRLZ14L IRLZ14S IRLZ14SL
OCR Text ... --- VDD = 30V --- ID = 10A --- RG = 12 --- RD = 2.8, See Fig. 10 Between lead, 7.5 nH --- and center of die contact 400 --- VGS = 0V 170 -...188) 2.79 (.110) 2.29 (.090) 2.61 (.103) 2.32 (.091) 8.89 (.350) RE F. 1.78 (.070) 1.27 (.050) ...
Description Power MOSFET(Vdss=60V, Rds(on)=0.20ohm, Id=10A)

File Size 285.26K  /  10 Page

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    NEC, Corp.
NEC Corp.
Part No. 2SJ607-Z 2SJ607-ZJ 2SJ607-S
OCR Text ...tarting Tch = 25C, VDD = -30 V, RG = 25 , VGS = -20 0 V (TO-263, TO-220SMD) The information in this document is subject to change withou...188 30 48 1.0 64 150 m 10 -2.5 VDS = -10 V, ID = -1 mA VDS = -10 V, ID = -42 A VGS = -10 V, I...
Description Pch power MOSFET 60V Ron=11m ohm MAX. TO-220AB,TO-262,TO-263
MOS FIELD EFFECT TRANSISTOR MOS场效应管

File Size 77.57K  /  8 Page

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    IRFZ46L IRFZ46S

International Rectifier
Part No. IRFZ46L IRFZ46S
OCR Text ... VDD = 28V --- I D = 54A ns --- RG = 9.1 --- RD = 0.49, See Fig. 10 Between lead, nH --- and center of die contact --- VGS = 0V --- pF VDS ...188) 2.79 (.110) 2.29 (.090) 2.61 (.103) 2.32 (.091) 8.89 (.350) RE F. 1.78 (.070) 1.27 (.050) ...
Description HEXFET? Power MOSFET

File Size 354.59K  /  10 Page

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    IRF3205S IRF3205L

International Rectifier
Part No. IRF3205S IRF3205L
OCR Text ...- VDD = 28V --- ID = 62A ns --- RG = 4.5 --- VGS = 10V, See Fig. 10 Between lead, 4.5 --- 6mm (0.25in.) nH G from package 7.5 --- and cente...188) 2.79 (.110) 2.29 (.090) 2.61 (.103) 2.32 (.091) 8.89 (.350) REF. 1.78 (.070) 1.27 (.050) ...
Description Power MOSFET(Vdss=55V, Rds(on)=8.0mohm, Id=110A?
Power MOSFET(Vdss=55V/ Rds(on)=8.0mohm/ Id=110A)

File Size 160.23K  /  10 Page

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    3710S IRF3710L IRF3710LPBF IRF3710S IRF3710SPBF IRF3710STRL IRF3710STRR

International Rectifier
Part No. 3710S IRF3710L IRF3710LPBF IRF3710S IRF3710SPBF IRF3710STRL IRF3710STRR
OCR Text ...- VDD = 50V --- ID = 28A ns --- RG = 2.5 --- VGS = 10V, See Fig. 10 Between lead, 4.5 --- 6mm (0.25in.) nH G from package 7.5 --- and cente...188) 2.79 (.110) 2.29 (.090) 2.61 (.103) 2.32 (.091) 8.89 (.350) REF. 1.78 (.070) 1.27 (.050) ...
Description 100V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
100V Single N-Channel HEXFET Power MOSFET in a TO-262 package
Search --To IRF3710S

File Size 572.23K  /  10 Page

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    NTB6411AN NTB6411ANG NTB6411ANT4G NTP6411AN NTP6411ANG

ON Semiconductor
Part No. NTB6411AN NTB6411ANG NTB6411ANT4G NTP6411AN NTP6411ANG
OCR Text ...Vdc, IL(pk) = 56 A, L = 0.3 mH, RG = 25 W) Lead Temperature for Soldering Purposes, 1/8 from Case for 10 Seconds TL 260 C 1 THERMAL RESISTANCE RATINGS Parameter Junction-to-Case (Drain) Steady State Junction-to-Ambient (Note 1)...
Description N-Channel Power MOSFET 100 V, 72 A, 14 mΩ
N-Channel Power MOSFET 100 V, 72 A, 14 m楼?

File Size 132.55K  /  7 Page

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    IRFZ24NL

International Rectifier
Part No. IRFZ24NL
OCR Text ... ) Starting TJ = 25C, L =1.0mH RG = 25, I AS = 10A. (See Figure 12) Pulse width 280s; duty cycle 2%. uses IRFZ24N data and test cond...188) 2.79 (.110) 2.29 (.090) 2.61 (.103) 2.32 (.091) 8.89 (.350) RE F. 1.78 (.070) 1.27 (.050) ...
Description Power MOSFET(Vdss=55V, Rds(on)=0.07ohm, Id=17A)

File Size 134.53K  /  10 Page

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    IRL6903L IRL6903S

International Rectifier
Part No. IRL6903L IRL6903S
OCR Text ... Starting TJ = 25C, L = 0.66mH RG = 25, IAS = -55A. (See Figure 12) ISD -55A, di/dt -130A/s, VDD V(BR)DSS, TJ 175C ** When moun...188) 2.79 (.110) 2.29 (.090) 2.61 (.103) 2.32 (.091) 8.89 (.350) RE F. 1.78 (.070) 1.27 (.050) ...
Description HEXFET? Power MOSFET

File Size 147.82K  /  10 Page

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    NTB6410AN NTB6410ANG NTB6410ANT4G NTP6410AN NTP6410ANG

ON Semiconductor
Part No. NTB6410AN NTB6410ANG NTB6410ANT4G NTP6410AN NTP6410ANG
OCR Text ...c, IL(pk) = 57.7 A, L = 0.3 mH, RG = 25 W) Lead Temperature for Soldering Purposes, 1/8 from Case for 10 Seconds TL 260 C 1 2 THERMAL RESISTANCE RATINGS Parameter Junction-to-Case (Drain) Steady State Junction-to-Ambient (Note ...
Description N-Channel Power MOSFET 100 V, 76 A, 13 m楼?

File Size 138.07K  /  7 Page

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