rg-400 u pdf Datasheet P6 Full Text Search --- IC-ON-LINE


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rg-400 u Datasheet PDF File

For rg-400 u Found Datasheets File :: 7245 Search Time::1.547ms
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				Mitsubishi Electric Semiconductor
Part No.	FM600Tu-2A09
OCR Text	... VDD = 48V, ID = 300A, VGS 15V RG = 4.2, Inductive load IS = 300A Conditions Min. -- 4.7 -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- --...400 600 600 400 250 -- 1.3 0.13 0.096 -- -- unit mA V A m V m Tch = 25C Tch = 125C Tch = 25C Tch ...
Description	MOSFET MODuLE HIGH POWER SWITCHING uSE INSuLATED PACKAGE
File Size	113.95K / 5 Page	View it Online	Download Datasheet

				Mitsubishi Electric Semiconductor Mitsubishi Electric Sem...
Part No.	FM400Tu-2A09
OCR Text	... VDD = 48V, ID = 200A, VGS 15V RG = 6.3, Inductive load IS = 200A Conditions Min. -- 4.7 -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- --...400 400 450 300 250 -- 1.3 0.19 0.142 -- -- unit mA V A m V m Tch = 25C Tch = 125C Tch = 25C Tch ...
Description	MOSFET MODuLE HIGH POWER SWITCHING uSE INSuLATED PACKAGE
File Size	114.00K / 5 Page	View it Online	Download Datasheet

				Vishay Siliconix
Part No.	SIHFR420ATL-E3 SIHFR420AT-E3 SIHFR420A-E3
OCR Text	... Starting TJ = 25 C, L = 45 mH, RG = 25 , IAS = 2.5 A (see fig. 12). ISD 2.5 A, dI/dt 270 A/s, VDD VDS, TJ 150 C. 1.6 mm from case. for ...400 V, VGS = 0 V, TJ = 125 C VGS = 10 V ID = 1.5 Ab VDS = 50 V, ID = 1.5 A 500 2.0 1.4 0.60 - ...
Description	Power MOSFET
File Size	165.01K / 8 Page	View it Online	Download Datasheet

				ON Semiconductor
Part No.	NDD04N62Z-1G
OCR Text	...= 4.0 A, VGS = 10 V Qgs Qgd VGP Rg td(on) VDD = 310 V, ID = 4.0 A, VGS = 10 V, RG = 5 tr td(off) tf 3.0 3.3 535 62 14 19 3.9 10 6.4 4.7 12 ...400 Coss 200 10 0 Crss 0 50 100 150 200 Ciss 1200 VGS = 0 V TJ = 25C 100 TJ = 100C 0 100...
Description	N-Channel Power MOSFET 620 V, 1.8
File Size	147.78K / 9 Page	View it Online	Download Datasheet

				Cirrus Logic
Part No.	PA78
OCR Text	...V = +26 RBIAS = 100K RF = 35.7K RG = 1.5K RL = 50K VS = 50V 10 CC = 2.2pF CC = 5pF CC = 10pF CC = 22pF 100 1K FREQuENCY, KHz 10K 30 RC = 3.3...400 200 0 0 2 15 OuTPuT VOLTAGE, V 10 5 0 -5 -10 -15 -4 30 OuTPuT VOLTAGE, V 20 10 0 -10 -20 -30 ...
Description	Power Operational Amplifier
File Size	450.89K / 10 Page	View it Online	Download Datasheet

				Philips Semiconductors
Part No.	TDA1023
OCR Text	...er dissipation, a gate resistor RG must be connected between the output Q and the triac gate to limit the output current to the minimum requ...400 130 - mV mV s Pulse width control input PW (pin 10) pulse width I10(RMS) = 1mA; f = 50 Hz 100...
Description	Proportional-control triac triggering circuit
File Size	246.46K / 19 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRLIZ44N
OCR Text	...- VDD = 28V --- ID = 25A ns --- RG = 3.4, VGS = 5.0V --- RD = 1.1, See Fig. 10 Between lead, 4.5 --- 6mm (0.25in.) nH G from package 7.5 --- and center of die contact 1700 --- VGS = 0V 400 --- VDS = 25V pF 150 --- = 1.0MHz, See Fig. 5 12 ...
Description	HEXFET? Power MOSFET
File Size	101.61K / 8 Page	View it Online	Download Datasheet

				IXYS[IXYS Corporation]
Part No.	IXGH17N100Au1 IXGH17N100u1
OCR Text	...C, 1 ms VGE = 15 V, TVJ = 125C, RG = 82 Clamped inductive load, L = 100 H TC = 25C Maximum Ratings 1000 1000 20 30 34 17 68 ICM = 34 @ 0...400 600 800 1000 Gate Charge - (nC) VCE - Volts Fig.9 Capacitance Curves 2000 f = 1MHz ...
Description	Low VCE(sat) IGBT with Diode High speed IGBT with Diode
File Size	110.86K / 6 Page	View it Online	Download Datasheet

				Microsemi Corporation
Part No.	APTC90TAM60TPG
OCR Text	... VGS = 10V VBus = 600V ID = 52A RG = 3.8 Inductive switching @ 25C VGS = 10V ; VBus = 600V ID = 52A ; RG = 3.8 Inductive switching @ 125C VG...400 25 3 1.5 4.2 1.7 mJ ns nC Max unit nF mJ Source - Drain diode ratings and characteristics ...
Description	Triple phase leg Super Junction MOSFET Power Module
File Size	226.51K / 5 Page	View it Online	Download Datasheet

For rg-400 u Found Datasheets File :: 7245 Search Time::1.547ms
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