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  rg-400 u Datasheet PDF File

For rg-400 u Found Datasheets File :: 7245    Search Time::1.547ms    
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    FM600TU-2A09

Mitsubishi Electric Semiconductor
Part No. FM600Tu-2A09
OCR Text ... VDD = 48V, ID = 300A, VGS 15V RG = 4.2, Inductive load IS = 300A Conditions Min. -- 4.7 -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- --...400 600 600 400 250 -- 1.3 0.13 0.096 -- -- unit mA V A m V m Tch = 25C Tch = 125C Tch = 25C Tch ...
Description MOSFET MODuLE HIGH POWER SWITCHING uSE INSuLATED PACKAGE

File Size 113.95K  /  5 Page

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    FM400TU-2A09

Mitsubishi Electric Semiconductor
Mitsubishi Electric Sem...
Part No. FM400Tu-2A09
OCR Text ... VDD = 48V, ID = 200A, VGS 15V RG = 6.3, Inductive load IS = 200A Conditions Min. -- 4.7 -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- --...400 400 450 300 250 -- 1.3 0.19 0.142 -- -- unit mA V A m V m Tch = 25C Tch = 125C Tch = 25C Tch ...
Description MOSFET MODuLE HIGH POWER SWITCHING uSE INSuLATED PACKAGE

File Size 114.00K  /  5 Page

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    SIHFR420ATL-E3 SIHFR420AT-E3 SIHFR420A-E3

Vishay Siliconix
Part No. SIHFR420ATL-E3 SIHFR420AT-E3 SIHFR420A-E3
OCR Text ... Starting TJ = 25 C, L = 45 mH, RG = 25 , IAS = 2.5 A (see fig. 12). ISD 2.5 A, dI/dt 270 A/s, VDD VDS, TJ 150 C. 1.6 mm from case. for ...400 V, VGS = 0 V, TJ = 125 C VGS = 10 V ID = 1.5 Ab VDS = 50 V, ID = 1.5 A 500 2.0 1.4 0.60 - ...
Description Power MOSFET

File Size 165.01K  /  8 Page

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    NDD04N62Z-1G

ON Semiconductor
Part No. NDD04N62Z-1G
OCR Text ...= 4.0 A, VGS = 10 V Qgs Qgd VGP Rg td(on) VDD = 310 V, ID = 4.0 A, VGS = 10 V, RG = 5 tr td(off) tf 3.0 3.3 535 62 14 19 3.9 10 6.4 4.7 12 ...400 Coss 200 10 0 Crss 0 50 100 150 200 Ciss 1200 VGS = 0 V TJ = 25C 100 TJ = 100C 0 100...
Description N-Channel Power MOSFET 620 V, 1.8 

File Size 147.78K  /  9 Page

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    PA78

Cirrus Logic
Part No. PA78
OCR Text ...V = +26 RBIAS = 100K RF = 35.7K RG = 1.5K RL = 50K VS = 50V 10 CC = 2.2pF CC = 5pF CC = 10pF CC = 22pF 100 1K FREQuENCY, KHz 10K 30 RC = 3.3...400 200 0 0 2 15 OuTPuT VOLTAGE, V 10 5 0 -5 -10 -15 -4 30 OuTPuT VOLTAGE, V 20 10 0 -10 -20 -30 ...
Description Power Operational Amplifier

File Size 450.89K  /  10 Page

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    TDA1023

Philips Semiconductors
Part No. TDA1023
OCR Text ...er dissipation, a gate resistor RG must be connected between the output Q and the triac gate to limit the output current to the minimum requ...400 130 - mV mV s Pulse width control input PW (pin 10) pulse width I10(RMS) = 1mA; f = 50 Hz 100...
Description Proportional-control triac triggering circuit

File Size 246.46K  /  19 Page

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    IRLIZ44N

IRF[International Rectifier]
Part No. IRLIZ44N
OCR Text ...- VDD = 28V --- ID = 25A ns --- RG = 3.4, VGS = 5.0V --- RD = 1.1, See Fig. 10 Between lead, 4.5 --- 6mm (0.25in.) nH G from package 7.5 --- and center of die contact 1700 --- VGS = 0V 400 --- VDS = 25V pF 150 --- = 1.0MHz, See Fig. 5 12 ...
Description HEXFET? Power MOSFET

File Size 101.61K  /  8 Page

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    IXGH17N100AU1 IXGH17N100U1

IXYS[IXYS Corporation]
Part No. IXGH17N100Au1 IXGH17N100u1
OCR Text ...C, 1 ms VGE = 15 V, TVJ = 125C, RG = 82 Clamped inductive load, L = 100 H TC = 25C Maximum Ratings 1000 1000 20 30 34 17 68 ICM = 34 @ 0...400 600 800 1000 Gate Charge - (nC) VCE - Volts Fig.9 Capacitance Curves 2000 f = 1MHz ...
Description Low VCE(sat) IGBT with Diode High speed IGBT with Diode

File Size 110.86K  /  6 Page

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    APTC90TAM60TPG

Microsemi Corporation
Part No. APTC90TAM60TPG
OCR Text ... VGS = 10V VBus = 600V ID = 52A RG = 3.8 Inductive switching @ 25C VGS = 10V ; VBus = 600V ID = 52A ; RG = 3.8 Inductive switching @ 125C VG...400 25 3 1.5 4.2 1.7 mJ ns nC Max unit nF mJ Source - Drain diode ratings and characteristics ...
Description Triple phase leg Super Junction MOSFET Power Module

File Size 226.51K  /  5 Page

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