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TOSHIBA[Toshiba Semiconductor]
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Part No. |
GT50J325
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Description |
Insulated Gate bipolar transistor Silicon N Channel IGBT High power switching Applications Fast switching Applications TOSHIBA Insulated Gate bipolar transistor Silicon N Channel IGBT
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File Size |
168.29K /
7 Page |
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it Online |
Download Datasheet |
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Toshiba, Corp.
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Part No. |
GT60N321
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Description |
Insulated Gate bipolar transistor Silicon N Channel IGBT High power switching Applications The 4th Generation High power switching Applications The 4th Generation 高功率转换应用的第四
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File Size |
172.02K /
6 Page |
View
it Online |
Download Datasheet |
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Price and Availability
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