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107M0 B2000 SB1040 025001 X13139HD 1N5650A 24006 4VCXH1
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    AO4407

Alpha & Omega Semiconductors
Part No. AO4407
OCR Text ...) (at v gs =-5v) < 30m w 100% uis tested 100% r g tested symbol v ds the ao4407 combines advanced trench mosfet technology with a low resistance package to provide extremely low r ds(on) . this device is ideal for load switch and batte...
Description 30V P-Channel MOSFET

File Size 528.72K  /  5 Page

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    AOW11N60

Alpha & Omega Semiconductors
Part No. AOW11N60
OCR Text ...n) (at v gs =10v) < 0.7 w 100% uis tested 100% r g tested the aow11n60 has been fabricated using an advanced high voltage mosfet process that is designed to deliver high levels of performance and robustness in popular ac- dc applications...
Description 600V,11A N-Channel MOSFET

File Size 444.14K  /  5 Page

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    AOT1100L AOB1100L

Alpha & Omega Semiconductors
Part No. AOT1100L AOB1100L
OCR Text ...n) (at v gs =10v) < 12m w 100% uis tested 100% r g tested symbol maximum units parameter absolute maximum ratings t a =25c unless otherwise noted 100v the aot1100l/aob1100l uses a robust technology that is designed to provide efficient ...
Description 100V N-Channel Rugged Planar MOSFET

File Size 289.09K  /  6 Page

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    AO482211

Alpha & Omega Semiconductors
Part No. AO482211
OCR Text ... < 26m w esd protected 100% uis tested 100% r g tested symbol v ds v gs v 20 gate-source voltage drain-source voltage 30 the ao4822 uses advanced trench technology to provi de excellent rds(on) and low gate charge. this device is sui...
Description 30V Dual N-channel MOSFET

File Size 296.46K  /  6 Page

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    AO4822A AO4822A10

Alpha & Omega Semiconductors
Part No. AO4822A AO4822A10
OCR Text ... < 26m w esd protected 100% uis tested 100% r g tested symbol v ds v gs v 20 gate-source voltage drain-source voltage 30 the ao4822a uses advanced trench technology to provide excellent r ds(on) and low gate charge. this device is su...
Description 30V Dual N-channel MOSFET

File Size 296.38K  /  6 Page

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    ON Semi
Part No. MBRB3030CTL_D ON0439
OCR Text ... the Unclamped Inductive Surge (uis) test technique. By testing at only a few different operating conditions (i.e. different inductor sizes) a safe operating range can be established for a device. A relationship between peak avalanche curre...
Description 30 AMPERES 30 VOLTS
From old datasheet system

File Size 154.92K  /  8 Page

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    AO4310

Alpha & Omega Semiconductors
Part No. AO4310
OCR Text ...(at v gs = 4.5v) < 4.2m w 100% uis tested 100% r g tested symbol v ds the ao4310 uses trench mosfet technology that is uniquely optimized to provide the most efficient hi gh frequency switching performance.power losses are minimized due ...
Description 36V N-Channel MOSFET

File Size 531.81K  /  6 Page

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    AO4314

Alpha & Omega Semiconductors
Part No. AO4314
OCR Text ...(at v gs = 4.5v) < 8.5m w 100% uis tested 100% r g tested symbol v ds the ao4314 uses trench mosfet technology that is uniquely optimized to provide the most efficient hi gh frequency switching performance.power losses are minimized due ...
Description 36V N-Channel MOSFET

File Size 567.72K  /  6 Page

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    AON6716

Alpha & Omega Semiconductors
Part No. AON6716
OCR Text ...(at v gs = 4.5v) < 4.2m w 100% uis tested 100% r g tested symbol v ds v gs i dm i ar e ar t j , t stg symbol t 10s steady-state steady-state r q jc maximum junction-to-case c/w c/w maximum junction-to-ambient a d 1 55 1.5 power diss...
Description 30V N-Channel MOSFET

File Size 280.28K  /  7 Page

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