Description |
10MS, 8 EIAJ SOIC, IND TEMP, green, 2.7V(bIOS FLASH)<br>10MS, 8 SOIC, IND TEMP, green, 2.7V(bIOS FLASH)<br>DIE SALE, 2.7V, 7 MIL(bIOS FLASH)<br>10MS, 8 SAP, IND, ROHS-b, 2.7V(bIOS FLASH)<br>8-SOIC,AUTO TEMP,2.7V(SERIAL EE)<br>10MS, 8 PDIP, IND TEMP, 2.7V(SERIAL EE)<br>10MS, 8 PDIP, EXT TEMP, green,2.7V(SERIAL EE)<br>10MS, 8 TSSOP, INT TEMP, green, 1.8V(SERIAL EE)<br>10MS, 8 PDIP, INT TEMP, green, 2.7V(SERIAL EE)<br>10MS, DIE 1.8V, 11 MILS THICKNESS(SERIAL EE)<br>10MS, 8 PDIP, IND TEMP, green, 2.7V(SERIAL EE)<br>10MS, 8 PDIP, IND TEMP, green,2.7V(SERIAL EE)<br>8 ultra THIN,MINI MAP,Pb/HALO FREE,IND T(SERIAL EE) 现场可编程门阵列(FPGA<br>10MS, 8 SOIC, EXT TEMP, green, 2.7V(SERIAL EE) 现场可编程门阵列(FPGA<br>Field Programmable Gate Array (FPGA) 现场可编程门阵列(FPGA<br>10MS, 8 SOIC, INT TEMP, green, 2.7V(SERIAL EE) 现场可编程门阵列(FPGA<br>10MS, 8 PDIP, EXT TEMP, green, 2.7V(SERIAL EE)<br>
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