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  vcbo 100v vceo 85v vebo 6v 6a Datasheet PDF File

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    CMMT493

Continental Device India Limited
Part No. CMMT493
Description 0.500W General Purpose NPN SMD Transistor. 100v vceo, 1.000A Ic, 20 hFE. Complementary CMMT593

File Size 172.98K  /  3 Page

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    CJF6388

Continental Device India Limited
Part No. CJF6388
Description 40.000W Medium Power NPN Plastic Leaded Transistor. 100v vceo, 10.000A Ic, 100 hFE.

File Size 268.65K  /  4 Page

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    CJF122

Continental Device India Limited
Part No. CJF122
Description 30.000W Medium Power NPN Plastic Leaded Transistor. 100v vceo, 5.000A Ic, 2000 hFE.

File Size 157.84K  /  4 Page

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    USHA India LTD
Part No. 2N6515
Description High voltage transistor. Collector-emitter voltage: vceo = 250V. Collector-base voltage: vcbo = 250V. Collector dissipation: Pc(max) = 625mW.

File Size 46.33K  /  1 Page

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    CSB1272

Continental Device India Limited
Part No. CSB1272
Description 10.000W Medium Power PNP Plastic Leaded Transistor. 100v vceo, 2.000A Ic, 1000 - 10000 hFE.

File Size 37.31K  /  2 Page

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    CJF107

Continental Device India Limited
Part No. CJF107
Description 80.000W Darlington PNP Plastic Leaded Transistor. 100v vceo, 8.000A Ic, 200 hFE. Complementary CJF102

File Size 270.60K  /  4 Page

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    CSD667C

Continental Device India Limited
Part No. CSD667C
Description 0.900W General Purpose NPN Plastic Leaded Transistor. 100v vceo, 1.000A Ic, 100 - 200 hFE

File Size 136.48K  /  2 Page

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    Continental Device Indi...
CDIL[Continental Device India Limited]
Part No. CN453 CN452
Description NPN SILICON PLANAR EPITAXIAL TRANSISTORS
0.900W General Purpose NPN Plastic Leaded Transistor. 80V vceo, 1.000A Ic, 40 - 150 hFE
0.900W General Purpose NPN Plastic Leaded Transistor. 100v vceo, 1.000A Ic, 40 - 200 hFE

File Size 124.98K  /  4 Page

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    74HC HCMOS 74HCT 74HCU

Philips Semiconductors
NXP Semiconductors
Part No. 74HC HCMOS 74HCT 74HCU
Description : Conductor AWG#18 to #22; Termination Style: Crimping; Current Rating(Amps)(Max.): 5; Contact Mating Area Plating: Palladium; Operating Temperature
Small Signal Bipolar Transistor; Collector Emitter Voltage, vceo:100v; Transistor Polarity:N Channel; C-E Breakdown Voltage:100v; DC Current Gain Min (hfe):30; Package/Case:R245; Collector Base Voltage:120V
HCMOS family characteristics

File Size 91.62K  /  19 Page

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    2SC3438

ISAHAYA[Isahaya Electronics Corporation]
Part No. 2SC3438
Description 500mW SMD NPN transistor, maximum rating: 100v vceo, 500mA Ic, 55 to 300 hFE. Complementary 2SA1368
FOR HIGH VOLTAGE DRIVE APPLICATION SILICON NPN EPITAXIAL TYPE

File Size 142.76K  /  4 Page

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