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Philips
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| Part No. |
PMBFJ111 PMBFJ113 PMBFJ112
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| OCR Text |
...stem (IEC 134). SYMBOL VDS VGSO vgdo IG Ptot Tstg Tj PARAMETER drain-source voltage gate-source voltage drain-drain voltage forward gate current (DC) total power dissipation storage temperature operating junction temperature Tamb = 25 C; no... |
| Description |
N-channel junction FETs
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| File Size |
29.33K /
6 Page |
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it Online |
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Philips
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| Part No. |
PMBFJ174 PMBFJ177
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| OCR Text |
...tot Tstg Tj max. max. VDS VGSO vgdo -IG max. max. max. max.
PMBFJ174 to 177
30 30 30 50 300 -65 to + 150 150
V V V mA mW C C
430
K/W
PMBFJ174 Gate cut-off current VGS = 20 V; VDS = 0 Drain cut-off current -VDS = 15 V; VGS... |
| Description |
P-channel silicon field-effect
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| File Size |
28.09K /
6 Page |
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it Online |
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panasonic
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| Part No. |
XN01871
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| OCR Text |
...Storage temperature Symbol VDSX vgdo ID IG PT Tch Tstg
(Ta=25C)
Ratings 30 -30 20 10 300 150 -55 to +150 Unit V V mA mA mW C C
1 : Gate (Tr1) 2 : Gate (Tr2) 3 : Drain (Tr2)
4 : Source 5 : Drain (Tr1) EIAJ : SC-74A Mini5-G1 Pakage
... |
| Description |
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| File Size |
78.55K /
3 Page |
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it Online |
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Matsshita / Panasonic
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| Part No. |
XN1871 XN01871
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| OCR Text |
...Storage temperature Symbol VDSX vgdo ID IG PT Tch Tstg
+0.2
(Ta=25C)
Ratings 30 -30 20 10 300 150 -55 to +150 Unit V V mA mA mW C C
1 : Gate (Tr1) 2 : Gate (Tr2) 3 : Drain (Tr2)
0 to 0.1
0.1 to 0.3
4 : Source 5 : Drain (T... |
| Description |
Composite Transistors
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| File Size |
58.95K /
3 Page |
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it Online |
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Sanyo Electric Co., Ltd.
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| Part No. |
2SK2219 1026 2SK2219-21 2SK2219-23
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| OCR Text |
...ture Storage Temperature Symbol vgdo IG ID PD Tj Tstg Conditions
1 : Source 2 : Drain 3 : Gate SANYO : MCP
Ratings -20 10 1 100 150 -55 to +150
Unit V mA mA mW
C C
Electrical Characteristics at Ta = 25C
Parameter Gate-to-Drain... |
| Description |
1 mA, N-CHANNEL, Si, SMALL SIGNAL, JFET
N-Channel Junction FET for Capacitor Microphone Applications(应用于电容器话筒的N沟道结型场效应管) N沟道场效应晶体管的结电容麦克风应用（应用于电容器话筒沟道结型场效应管
From old datasheet system
N-Channel Junction Silicon FET
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| File Size |
133.01K /
4 Page |
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Matsshita / Panasonic
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| Part No. |
2SK1842 0875
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| OCR Text |
...in 30 -40
typ
0 to 0.1
vgdo
-40
V
0.1 to 0.3 0.40.2
0.8
Parameter
Symbol
Ratings
Unit
+0.2 1.1 -0.1
max 200 - 0.5
0.16 -0.06
+0.1
s Absolute Maximum Ratings (Ta = 25C)
1.45
Unit A nA V
... |
| Description |
Silicon Junction FETs (Small Signal)
From old datasheet system
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| File Size |
40.79K /
3 Page |
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it Online |
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panasonic
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| Part No. |
2SK1842
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| OCR Text |
...ture Storage temperature Symbol vgdo VGSO ID IG PD Tj Tstg Ratings -40 -40 1 10 150 150 -55 to +150 Unit V V mA mA mW C C
10
1.1+0.2 -0.1
(0.65)
1: Source 2: Drain 3: Gate
0 to 0.1
1.1+0.3 -0.1
JEDEC: TO-236 EIAJ: SC-59... |
| Description |
Small-signal device - Small-signal FETs - Junction FETs
From old datasheet system
Mini3-G1
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| File Size |
47.92K /
3 Page |
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it Online |
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Sanyo
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| Part No. |
2SK242 1040
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| OCR Text |
...ture Storage Temperature Symbol vgdo IG ID PD Tj Tstg Conditions
1 : Gate 2 : Drain 3 : Source SANYO : CP
0.8 1.1
Ratings -20 10 20 150 125 -55 to +125
Unit V mA mA mW
C C
Electrical Characteristics at Ta = 25C
Parameter Ga... |
| Description |
N-Channel Junction Silicon FET Low-Frequency General-Purpose Amplifier Applications
From old datasheet system
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| File Size |
169.08K /
5 Page |
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it Online |
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Price and Availability
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