... -72 -18
Unit V V A A A A mJ w C C
Body-drain diode reverse drain current I DR Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Note: I AP
Note3 Note3 Note2
-18 27 60 150 -55 to +150
...
Description
Silicon P Channel MOS FET High Speed Power Switching
... -80 -20
Unit V V A A A A mJ w C C
Body-drain diode reverse drain current I DR Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Note: I AP
Note3 Note3 Note2
-20 34 75 150 -55 to +150
...
Description
Silicon P Channel MOS FET High Speed Power Switching
...-120 -30
Unit V V A A A A mJ w C C
Body-drain diode reverse drain current I DR Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Note: I AP
Note3 Note3 Note2
-30 77 75 150 -55 to +150
...
Description
Silicon P Channel MOS FET High Speed Power Switching
...-240 -60
Unit V V A A A A mJ w C C
Body-drain diode reverse drain current I DR Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Note: I AP
Note3 Note3 Note2
-60 308 125 150 -55 to +150...
Description
Silicon P Channel MOS FET High Speed Power Switching
...45 to +150
Unit V
V mA mA w w C C
Electrical Characteristics (Ta = 25C)
Item Drain to source breakdown voltage 2SJ76 2SJ77 2SJ78 2SJ79 Gate to source breakdown voltage Gate to source voltage Drain to source saturation voltage Forw...
... -55 to +150
Unit V
V A A w C C
2
2SK1056, 2SK1057, 2SK1058
Electrical Characteristics (Ta = 25C)
Item Drain to source breakdown voltage Symbol Min 2SK1056 V(BR)DSX 2SK1057 2SK1058 Gate to source breakdown voltage Gate to sour...
Description
Silicon N Channel MOS FET Silicon N-Channel MOS FET
...55 to +150
Unit V
V A A A w C C
2
2SK1153, 2SK1154
Electrical Characteristics (Ta = 25C)
Item Drain to source breakdown voltage Symbol Min 2SK1153 V(BR)DSS 2SK1154 V(BR)GSS I GSS 450 500 30 -- -- -- -- -- -- 10 250 V A A I G =...
Description
Silicon N Channel MOS FET Silicon N-Channel MOS FET
...55 to +150
Unit V
V A A A w C C
2
2SK1155, 2SK1156
Electrical Characteristics (Ta = 25C)
Item Drain to source breakdown voltage Symbol Min 2SK1155 V(BR)DSS 2SK1156 V(BR)GSS I GSS 450 500 30 -- -- -- -- -- -- 10 250 V A A I G =...
Description
Silicon N Channel MOS FET Silicon N-Channel MOS FET
...55 to +150
Unit V
V A A A w C C
2
2SK1157, 2SK1158
Electrical Characteristics (Ta = 25C)
Item Drain to source breakdown voltage Symbol Min 2SK1157 V(BR)DSS 2SK1158 V(BR)GSS I GSS 450 500 30 -- -- -- -- -- -- 10 250 V A A I G =...
...55 to +150
Unit V
V A A A w C C
2
2SK1159, 2SK1160
Electrical Characteristics (Ta = 25C)
Item Drain to source breakdown voltage Symbol Min 2SK1159 V(BR)DSS 2SK1160 V(BR)GSS I GSS 450 500 30 -- -- -- -- -- -- 10 250 V A A I G =...