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    2SA2058

TOSHIBA[Toshiba Semiconductor]
Part No. 2SA2058
OCR Text ...t gain: hFE = 200 to 500 (IC = -0.2 A) Low collector-emitter saturation voltage: VCE (sat) = -0.19 V (max) High-speed switching: tf = 25 ns ...10 s DC Pulse Symbol VCBO VCEO VEBO IC ICP IB PC (Note) Tj Tstg Rating -20 -10 -7 -1.5 -2.5 -150 500...
Description TOSHIBA Transistor Silicon PNP Epitaxial Type

File Size 194.32K  /  5 Page

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    2SA2059

TOSHIBA[Toshiba Semiconductor]
Part No. 2SA2059
OCR Text ...t gain: hFE = 200 to 500 (IC = -0.5 A) Low collector-emitter saturation voltage: VCE (sat) = -0.19 V (max) High-speed switching: tf = 40 ns ...10 s DC Pulse Symbol VCBO VCEO VEBO IC ICP IB PC (Note) Tj Tstg Rating -20 -20 -7 -3.0 -5.0 -300 1.0...
Description SILICON PNP EPITAXIAL TYPE

File Size 181.01K  /  5 Page

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    2SA2061

TOSHIBA[Toshiba Semiconductor]
Part No. 2SA2061
OCR Text ...nt gain: hFE = 200 to 500 (IC = 0.5 A) Low collector-emitter saturation voltage: VCE (sat) = -0.19 V (max) High-speed switching: tf = 40 ns ...10 s DC DC Pulse Symbol VCBO VCEO VEBO IC ICP IB PC (Note) Tj Tstg Rating -20 -20 -7 -2.5 -4.0 -250 ...
Description Silicon PNP Epitaxial Type

File Size 167.29K  /  5 Page

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    2SA2062 2SC5774

Sanyo Electric Co.,Ltd.
SANYO[Sanyo Semicon Device]
Part No. 2SA2062 2SC5774
OCR Text ... tf Conditions VCB=(--)160V, IE=0 VEB=(--)4V, IC=0 VCE=(--)5V, IC=(--)1A VCE=(--)5V, IC=(--)5A VCE=(--)5V, IC=(--)1A VCB=(--)10V, f=1MHz VCE...10)15 (280)140 1.5 (-0.3)0.2 (--)2.0 MHz pF V V V V V s s s 160 Unit mA mA Any and all SANYO prod...
Description 140V / 10A, AF70W Output Applications

File Size 34.06K  /  4 Page

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    2SA2064

PANASONIC[Panasonic Semiconductor]
Part No. 2SA2064
OCR Text ...0.2 Solder Dip 1.40.2 1.60.2 0.80.1 3.00.5 2.60.1 0.550.15 Absolute Maximum Ratings TC = 25C Parameter Collector-base volta...10 -20 25 2.0 150 -55 to +150 C C Unit V V V A A W 1 2 2.540.30 5.080.50 3 1: Base 2: Collect...
Description Silicon PNP epitaxial planar type

File Size 70.35K  /  3 Page

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    2SA2067

PANASONIC[Panasonic Semiconductor]
Part No. 2SA2067
OCR Text ...10.00.2 1.00.2 5.00.1 C 1.0 2.250.2 0.650.1 0.650.1 0.350.1 1.050.1 0.550.1 2.50.2 2.50.2 123 0.550.1 Absolute Maximum Ratings ...10 mA, IB = 0 VCB = -60 V, IE = 0 VCE = -60 V, IB = 0 VEB = -6 V, IC = 0 VCE = -4 V, IC = -1 A VCE =...
Description Silicon PNP epitaxial planar type

File Size 66.39K  /  3 Page

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    2SA2069

TOSHIBA[Toshiba Semiconductor]
Part No. 2SA2069
OCR Text ...t gain: hFE = 200 to 500 (IC = -0.15 A) Low collector-emitter saturation voltage: VCE (sat) = -0.14 V (max) High-speed switching: tf = 37 ns...10 s DC DC Pulse Symbol VCBO VCEO VEBO IC ICP IB PC (Note 1) Tj Tstg Rating -20 -20 -7 -1.5 -2.5 -15...
Description High-Speed Switching Applications DC-DC Converter Applications

File Size 194.91K  /  5 Page

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    2SA2070

TOSHIBA[Toshiba Semiconductor]
Part No. 2SA2070
OCR Text ...t gain: hFE = 200 to 500 (IC = -0.1 A) Low collector-emitter saturation voltage: VCE (sat) =- 0.20 V (max) High-speed switching: tf = 70 ns ...10 s DC Pulse Symbol VCBO VCEO VEBO IC ICP IB PC (Note) Tj Tstg Rating -50 -50 -7 -1.0 -2.0 -0.1 1.0...
Description TOSHIBA Transistor Silicon PNP Epitaxial Type

File Size 131.46K  /  5 Page

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    2SA2071

ROHM[Rohm]
Part No. 2SA2071
OCR Text ...yp. : -200mV at IC = -2A, IB = -0.2A) 3) Strong discharge power for inductive load and capacitance load. 4) Complements the 2SC5824 !Externa...10 COLLECTOR CURRENT : IC (A) 1000 Ta=25C VCC= -25V IC/IB=10/1 1000 DC CURRENT GAIN : hFE V...
Description Power transistor (-60V, -3A)
Power transistor (−60V −3A)
Power transistor (−60V, −3A)

File Size 42.30K  /  4 Page

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    2SA2084

PANASONIC[Panasonic Semiconductor]
Part No. 2SA2084
OCR Text 0.40+0.10 -0.05 Unit: mm 0.16+0.10 -0.06 Features * High collector-emitter voltage (Base open) VCEO * Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing 3 1.50+0.25 -0.05 2.8...
Description Silicon PNP epitaxial planar type

File Size 67.26K  /  3 Page

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