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Unisonic Technologies Co Ltd
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Part No. |
2SC3358
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OCR Text |
...
TEST CONDITIONS
VCB=10V, IE=0 VEB=1V, IC=0 VCE=10V, IC=20mA VCE=10V, IC=20mA VCB=10V, IE=0, f=1.0MHz VCE=10V, IC=7mA, f=1.0GHz
MIN
...2.0
UTC
UNISONIC TECHNOLOGIES CO., LTD.
1
QW-R212-001,A
UTC 2SC3358
NPN SILICON EP... |
Description |
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File Size |
64.14K /
2 Page |
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INFINEON[Infineon Technologies AG]
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Part No. |
BGA614
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OCR Text |
... with 18.5 dB typical gain at 1.0 GHz * Compression point P-1dB = 12 dBm at 2.0 GHz * Noise figure F50 = 2.30 dB at 2.0 GHz * Absolute stable * 70 GHz fT - Silicon Germanium technology Applications * Driver amplifier for GSM/PCS/CDMA/UMTS *... |
Description |
Silicon MMICs - SiGe 0...5GHz, 15dB Broadband Amplifier, Pout = 12dBm, SOT343 Silicon Germanium Broadband MMIC Amplifier
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File Size |
489.60K /
8 Page |
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it Online |
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TOSHIBA
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Part No. |
TIM4450-4U
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OCR Text |
...UNIT MIN. TYP. MAX. dBm 35.5 10.0 -44 36.5 11.0 1.1 37 -47 1.1 1.3 0.6 1.3 80
f = 4.4 - 5.0GHz
add
IM3
dBc A C
VDS X...2.5 2.6 4.5 -4.0 3.5 6.0
Rth(c-c) Channel to Case
The information contained herein is presen... |
Description |
MICROWAVE POWER GaAs FET
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File Size |
68.69K /
4 Page |
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Sanyo
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Part No. |
2SC3950
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OCR Text |
...FE1 hFE2 fT Cob Cre VCB=20V, IE=0 VEB=2V, IC=0 VCE=5V, IC=50mA VCE=5V, IC=500mA VCE=5V, IC=100mA VCB=10V, f=1MHz VCB=10V, f=1MHz 40* 20 2.0 6.0 4.6 GHz pF pF Conditions Ratings min typ max 0.1 5.0 200* Unit A A
* hFE1 : The 2SC3950 is cl... |
Description |
NPN Epitaxial Planar Silicon Transistor High-Definition CRT Display Video Output Applications PNP/NPN Epitaxial Planar Silicon Transistors
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File Size |
78.58K /
3 Page |
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it Online |
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Price and Availability
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